@article { ISI:000241010400014, title = {Characterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {17}, number = {12}, year = {2006}, month = {DEC}, pages = {1055-1063}, publisher = {SPRINGER}, type = {Article}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

Optoelectronic technologically important pseudo-binary Cd1-xZnxSe thin films with a variable composition ( 0 \< x \< 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd1-xZnxSe have been deposited on non-conducting glass substrate in tartarate bath containing Cd+2 and Zn+2 ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10(-7) to 10(-8) (Omega cm)(-1). All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.

}, issn = {0957-4522}, doi = {10.1007/s10854-006-9034-2}, author = {Hankare, P. P. and Chate, P. A. and Asabe, M. R. and Delekar, S. D. and Mulla, Imtiaz S. and Garadkar, K. M.} } @article { ISI:000240707800018, title = {Effect of annealing on properties of ZrSe2 thin films}, journal = {Journal of Crystal Growth}, volume = {294}, number = {2}, year = {2006}, month = {SEP}, pages = {254-259}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Thin films of ZrSe2 have been prepared on stainless steel and fluorine-doped tin oxide-coated glass substrates using electrodeposition technique at potentiostatic mode. Double-distilled water containing precursors Zr and Se with ethylene diamine tetra-acetic acid disodium salt as a complexing agent was used to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature, pH of the bath and annealing temperature have been optimized using photoelectrochernical (PEC) technique. The films deposited at optimum preparative parameters are annealed at different temperatures. The film annealed at 200 degrees C shows more photosensitivity. The as-deposited and annealed films at 200 degrees C have been characterized by X-ray diffraction (XRD), energy dispersive analysis by X-ray (EDAX), optical absorption and scanning electron microscopy (SEM). The XRD analysis of the as-deposited and annealed films showed the presence of polycrystalline nature with hexagonal crystal structure. EDAX study reveals that deposited films are almost stoichiometric. Optical absorption study shows the presence of direct transition and band gap energies are found to be 1.5 and 1.38 eV, respectively, for the as-deposited and annealed films. SEM study revels that the grains are uniformly distributed over the surface of substrate for the as-deposited as well as annealed film, which indicates formation of good and compact type of crystal structure. (c) 2006 Elsevier B.V. All rights reserved.

}, keywords = {band gap, EDAX, Electrodeposition, PEC, SEM, XRD, ZrSe2 thin films}, issn = {0022-0248}, doi = {10.1016/j.jcrysgro.2006.06.018}, author = {Hankare, P. P. and Asabe, M. R. and Kokate, A. V. and Delekar, S. D. and Sathe, D. J. and Mulla, Imtiaz S. and Chougule, B. K.} } @article { ISI:000241849900010, title = {Novel chemical synthetic route and characterization of zinc selenide thin films}, journal = {Journal of Physics and Chemistry of Solid}, volume = {67}, number = {11}, year = {2006}, month = {NOV}, pages = {2310-2315}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap {\textquoteleft}E-g{\textquoteright} for the film was found to be 2.81 eV and electrical conductivity in the order of 10(-8)(Omega cm)(-1) with n-type conduction mechanism. (c) 2006 Elsevier Ltd. All rights reserved.

}, keywords = {chalcogenides, electronic materials}, issn = {0022-3697}, doi = {10.1016/j.jpcs.2006.05.001}, author = {Hankare, P. P. and Chate, P. A. and Delekar, S. D. and Asabe, M. R. and Mulla, Imtiaz S.} } @article { ISI:000241849900014, title = {Photoelectrochemical properties of electrochemically deposited CdIn2S4 thin films}, journal = {Journal of Physics and Chemistry of Solids}, volume = {67}, number = {11}, year = {2006}, month = {NOV}, pages = {2331-2336}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94\%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

}, keywords = {Thin films, X-ray diffraction}, issn = {0022-3697}, doi = {10.1016/j.jpcs.2006.05.022}, author = {Kokate, A. V. and Asabe, M. R. and Delekar, S. D. and Gavali, L. V. and Mulla, Imtiaz S. and Hankare, P. P. and Chougule, B. K.} } @article { ISI:000242958500011, title = {Synthesis of cadmium selenide thin films at low-temperature by simple chemical route and their characterization}, journal = {Journal of Physics and Chemistry of Solids}, volume = {67}, number = {12}, year = {2006}, month = {DEC}, pages = {2506-2511}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Crystalline CdSe thin film has been deposited using appropriate precursor solution containing cadmium sulfate octahydrate, tartaric acid, potassium hydroxide, ammonia and sodium selenosulfate. The effect of parameters such as bath composition, deposition temperature, pH of the solution, speed of the rotation and the specificity of complexing agent on growth process is studied. The {\textquoteleft}as-deposited{\textquoteright} CdSe thin film was found to be red in color, specularly reflective and well adherent to the glass substrate. The crystalline phase of the deposited sample was hexagonal wurtzite-type. The analysis of optical absorption data shows energy band gap energy (E-g) 2.01 eV. The morphological study and compositional analysis of film sample have been discussed. The electrical resistivity of CdSe thin film was found to the order of 10(6) Omega cm. (c) 2006 Elsevier Ltd. All rights reserved.

}, keywords = {XRD}, issn = {0022-3697}, doi = {10.1016/j.jpes.2006.07.006}, author = {Hankare, P. P. and Delekar, S. D. and Asabe, M. R. and Chate, P. A. and Bhuse, V. M. and Khomane, A. S. and Garadkar, K. M. and Sarwade, B. D.} } @article { ISI:000262796500004, title = {Characterization of MoSe2 thin film deposited at room temperature from solution phase}, journal = {Journal of Crystal Growth}, volume = {311}, number = {1}, year = {2008}, month = {DEC}, pages = {15-19}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap {\textquoteleft}E-g{\textquoteright} for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.

}, keywords = {Crystal morphology, Growth from solution, Inorganic compound, Polycrystalline deposition, Semiconducting materials, X-ray diffraction}, issn = {0022-0248}, doi = {10.1016/j.jcrysgro.2008.09.188}, author = {Hankare, P. P. and Patil, A. A. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Manikshete, A. H. and Mulla, Imtiaz S.} } @article { ISI:000253181000037, title = {Synthesis, characterization of chemically deposited indium selenide thin films at room temperature}, journal = {Journal of Physics and Chemistry of Solids}, volume = {69}, number = {1}, year = {2008}, month = {JAN}, pages = {249-254}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Polycrystalline In2Se3 semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35eV at room temperature and have specific electrical conductivity of the order of 10(-2) (Omega cm)(-1) showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data. (c) 2007 Elsevier Ltd. All rights reserved.

}, keywords = {Chemical synthesis, Semiconductor}, issn = {0022-3697}, doi = {10.1016/j.jpcs.2007.08.070}, author = {Asabe, M. R. and Chate, P. A. and Delekar, S. D. and Garadkar, K. M. and Mulla, Imtiaz S. and Hankare, P. P.} } @article { ISI:000273067400009, title = {Effect of sintering temperature and thermoelectric power studies of the system MgFe2-xCrxO4}, journal = {Solid State Sciences}, volume = {11}, number = {12}, year = {2009}, month = {DEC}, pages = {2075-2079}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Mixed metal oxides showing the spinel structure exhibit interesting structural and electrical properties. Substances with specific compositions in the system MgFe2-xCrxO4 were synthesized by the simple co-precipitation method and have been investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM) to study the effect of temperature on the size of particles and grains. The infrared spectrum shows, two strong bands around 600 and 500 cm(-1). An elemental composition of one of the samples, MgFeCrO4 was found by energy dispersive X-ray spectroscopy (EDS). The thermoelectric power measurements carried out from room temperature to 500 degrees C, show both n-type and p-type behavior. (C) 2009 Elsevier Masson SAS. All rights reserved.

}, keywords = {synthesis, Temperature effect, Thermoelectric studies}, issn = {1293-2558}, doi = {10.1016/j.solidstatesciences.2009.09.005}, author = {Hankare, P. P. and Vader, V. T. and Sankpal, U. B. and Gavali, L. V. and Sasikala, R. and Mulla, Imtiaz S.} } @article { ISI:000273709600061, title = {Gas sensing properties of magnesium ferrite prepared by co-precipitation method}, journal = {Journal of Alloys and Compounds}, volume = {488}, number = {1}, year = {2009}, month = {NOV}, pages = {270-272}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Polycrystalline magnesium ferrite (MgFe(2)O(4)) was prepared by the co-precipitation method. The synthesized compound was characterized for their phase and morphology by X-ray diffraction and scanning electron microscopy, respectively. Conductance responses of the (MgFe(2)O(4)) were measured towards gases like hydrogen sulfide (H(2)S), liquefied petroleum gas (LPG), ethanol vapors (C(2)H(5)OH), SO(x), H(2), NO(x), NH(3), methanol, acetone and petrol. The gas sensing characterstics were obtained by measuring the sensitivity as a function of various controlling factors like operating temperatures and concentrations of gases. It was found that the sensor exhibited various responses towards these gases at different operating temperatures. Furthermore; the MgFe(2)O(4) based sensor exhibited a fast response and a good recovery towards petrol at temperature 250 degrees C. The results of the response towards petrol reveal that (MgFe(2)O(4)) synthesized by a simple co-precipitation method, would be a suitable material for the fabrication of the petrol sensor. (C) 2009 Published by Elsevier B.V.

}, keywords = {Ferrites, Gas sensor, X-ray diffraction and scanning electron microscopy}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2009.08.103}, author = {Hankare, P. P. and Jadhav, S. D. and Sankpal, U. B. and Patil, R. P. and Sasikala, R. and Mulla, Imtiaz S.} } @article { ISI:000268022700058, title = {Magnetic and dielectric properties of nanophase manganese-substituted lithium ferrite}, journal = {Journal of Magnetism and Magnetic Materials}, volume = {321}, number = {19}, year = {2009}, month = {OCT}, pages = {3270-3273}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Nanocrystalline manganese-substituted lithium ferrites viz. Li0.5Fe2.5-xMnxO4 (2.5 \<= x \>= 0) were prepared by sol-gel autocombustion method. X-ray diffraction analysis confirmed that as the concentration of manganese increases the cubic phase changes to the tetragonal phase. The variation of saturation magnetization was studied as a function of manganese content. All the compositions indicate that they are ferrimagnetic in nature. The dielectric constant, dielectric loss tangent and ac conductivity of all samples were measured at room temperature as a function of frequency. These parameters decrease with increase in frequency for all of the samples. The substitution of manganese plays an important role in changing the structural and magnetic properties of these ferrites. The compositional variation of dielectric constant and d.c. resistivity shows an inverse trend of variation with each other. (C) 2009 Elsevier B.V. All rights reserved.

}, keywords = {dielectric constant, Ferrite, Magnetization, X-ray diffraction}, issn = {0304-8853}, doi = {10.1016/j.jmmm.2009.05.074}, author = {Hankare, P. P. and Patil, R. P. and Sankpal, U. B. and Jadhav, S. D. and Mulla, Imtiaz S. and Jadhav, K. M. and Chougule, B. K.} } @article { ISI:000271542900165, title = {Synthesis and characterization of CoCrxFe2-xO4 nanoparticles}, journal = {Journal of Alloys and Compounds}, volume = {485}, number = {1-2}, year = {2009}, month = {OCT}, pages = {798-801}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Spinel-phase nanocrystalline CoCrxFe2-xO4 powders (0.0 \<= x \<= 2.0) were synthesized by citrate-gel precursor method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). transmission electron microscopy (TEM) and infra-red spectroscopy (FT-IR). The XRD and selected-area electron diffraction (SAED) patterns indicated that the synthesized nanoparticles have single-phase spinet structure without the presence of any other impurities. The changes in electrical and magnetic properties of different stiochiometric compositions have also been investigated. It is seen that with increase in chromium contents, the measured magnetic hysteresis loops become narrow with decreasing trend in saturation magnetization. Electrical resistivity indicated that all the compounds are semiconducting nature. (C) 2009 Elsevier B.V. All rights reserved.

}, keywords = {Magnetic measurements, Sintering, transmission electron microscopy, X-ray diffraction}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2009.06.087}, author = {Hankare, P. P. and Sankpal, U. B. and Patil, R. P. and Mulla, Imtiaz S. and Lokhande, P. D. and Gajbhiye, N. S.} } @article { ISI:000265911700183, title = {Synthesis, characterization and effect of sintering temperature on magnetic properties of MgNi ferrite prepared by co-precipitation method}, journal = {Journal of Alloys and Compounds}, volume = {475}, number = {1-2}, year = {2009}, month = {MAY}, pages = {926-929}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Mixed MgNi ferrites with composition Mg(0.5)Ni(0.5)Fe(2)O(4) where the mole fraction for Ni (x = 0, 0.25, 0.75, 0.5 and 1) were prepared by following co-precipitation method at temperature 110 degrees C and maintaining a pH of solution equal to 9.5 enable to achieve large particle surface area. The resultant materials obtained in powder form were sintered at different temperatures. Thermogravimetry (TGA), X-ray diffraction (XRD) and scanning electron microscopy, technique were applied to obtain structural parameters. The XRD patterns reveal the presence of(311) peak as the most intense one. The intensity of XRD peak increases with increase in sintering temperature. The saturation magnetization values showed increasing trend with increase in sintering temperature from 2.37 to 29.76 emu/g. These results along with the analysis of SEM micrographs are interpreted in terms of increase in particle grain size with increase in sintering temperature. (C) 2008 Elsevier B.V. All rights reserved.

}, keywords = {Chemical synthesis, Ferrites, FT-IR, scanning electron microscopy, X-ray diffraction}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2008.08.082}, author = {Hankare, P. P. and Jadhav, S. D. and Sankpal, U. B. and Chavan, Santosh S. and Waghmare, K. J. and Chougule, B. K.} } @article { ISI:000278305600001, title = {Magnetic, dielectric and complex impedance spectroscopic studies of nanocrystalline Cr substituted Li-ferrite}, journal = {Journal of Magnetism and Magnetic Materials}, volume = {322}, number = {18}, year = {2010}, month = {SEP}, pages = {2629-2633}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Nanocrystalline Li0.5Fe2.5-xCrxO4 (2.5 \<= x \>= 0) ferrites were prepared by a sol-gel autocombustion route. X-ray diffraction was employed to confirm the cubic spinel phase formation of the ferrites. The lattice parameter decreases with increase in Cr content. The saturation magnetization, coercivity and remanance were studied as a function of Cr content. The dielectric constant and dielectric loss were measured as a function of frequency in the frequency range 20 Hz-1 MHz. Frequency dependence of dielectric constant shows dielectric dispersion due to the Maxwell-Wagner type of interfacial polarization. In order to understand the conduction mechanism, complex impedance measurements were carried out. The substitution of chromium plays an important role in changing the dielectric and magnetic properties of lithium ferrites. (C) 2010 Published by Elsevier B.V.

}, keywords = {Complex impedance, dielectric response, Ferrites, Magnetic hysteresis, Sol-gel synthesis, X-ray diffraction}, issn = {0304-8853}, doi = {10.1016/j.jmmm.2010.03.005}, author = {Hankare, P. P. and Patil, R. P. and Sankpal, U. B. and Garadkar, K. M. and Sasikala, R. and Tripathi, A. K. and Mulla, Imtiaz S.} } @article { ISI:000279139400020, title = {Preparation and characterization of CuInSe2 thin films by chemical bath deposition technique}, journal = {Journal of Alloys and Compounds}, volume = {500}, number = {1}, year = {2010}, month = {JUN}, pages = {78-81}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Copper indium diselenide (CIS) thin films have been deposited using a precursor solution containing copper sulphate, indium trichoride, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature. The as grown brown colored films were found to be well adherent to glass substrates. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, optical absorption, electrical resistivity, and thermo electric measurement techniques. The analysis of optical absorption data shows band-gap energy (E-g) to be 1.1 eV. The electrical resistivity of the thin film was found to be of the order of 10(2) (Omega cm). Thermoelectric power measurement shows n-type conduction. (C) 2010 Published by Elsevier B.V.

}, keywords = {CuInSe2, Optical properties, Thin films, X-ray diffraction}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2010.03.215}, author = {Hankare, P. P. and Rathod, K. C. and Chate, P. A. and Jadhav, A. V. and Mulla, Imtiaz S.} } @article { ISI:000278744500055, title = {Synthesis and characterization of nanocrystalline zinc substituted nickel ferrites}, journal = {Journal of Alloys and Compounds}, volume = {496}, number = {1-2}, year = {2010}, month = {APR}, pages = {256-260}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Nanocrystalline zinc substituted nickel ferrites, Ni(1-x)Zn(x)Fe(2)O(4) (0.0 \<= x \<= 1.0) have been prepared by citrate gel auto-combustion method. The effect of zinc ion content on structural, electrical transport and magnetic properties has been studied. The X-ray diffraction (XRD) pattern revealed that, all the compositions possess single-phase spinel structure. The nano-sized grain structure formation was confirmed by transmission electron microscopy (TEM). The dc electrical resistivity shows the samples are semiconducting in nature. The magnetic measurements showed that the composition Ni(0.6)Zn(0.4)Fe(2)O(4) has maximum saturation magnetization (M(s)) while high coersivity (Hc) for ZnFe(2)O(4). Thermoelectric power measurement study showed that the compounds, with x \<= 0.4 are p-type and for x \> 0.4 behaves n-type conduction mechanism. (C) 2010 Published by Elsevier B.V.

}, keywords = {Electron microscopy, Magnetic, Sintering, X-ray diffraction}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2010.01.009}, author = {Hankare, P. P. and Sankpal, U. B. and Patil, R. P. and Mulla, Imtiaz S. and Sasikala, R. and Tripathi, A. K. and Garadkar, K. M.} } @article { ISI:000274839100053, title = {Synthesis and characterization of nickel selenide thin films deposited by chemical method}, journal = {Journal of Alloys and Compounds}, volume = {490}, number = {1-2}, year = {2010}, month = {FEB}, pages = {228-231}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Nickel selenide thin films have been deposited using chemical bath method on non-conducting glass substrates in a tartarate bath containing nickel sulphate octahydrate, hydrazine hydrate, sodium seleno-sulphate in an aqueous alkaline medium. The grown films were uniform, well adherent and black in color. The films were characterized using X-ray diffraction, scanning electron microscopy, optical absorption and electrical measurements. The nickel selenide thin film revealed polycrystalline nature with hexagonal system. The direct optical band gap of the film was found to be 1.61 eV. Electrical resistivity of film was observed in the order of 10(3) (Omega cm) with p-type conduction mechanism. (C) 2009 Elsevier B.V. All rights reserved.

}, keywords = {Crystal growth, Semiconductors, Thin films, X-ray diffraction}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2009.09.132}, author = {Hankare, P. P. and Jadhav, B. V. and Garadkar, K. M. and Chate, P. A. and Mulla, Imtiaz S. and Delekar, S. D.} } @article { ISI:000288179600007, title = {Photoelectrochemical applications of In2Se3 thin films by chemical deposition}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {22}, number = {4}, year = {2011}, month = {APR}, pages = {359-364}, publisher = {SPRINGER}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61\%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.

}, issn = {0957-4522}, doi = {10.1007/s10854-010-0142-7}, author = {Hankare, P. P. and Rathod, K. C. and Asabe, M. R. and Jadhav, A. V. and Helavi, V. B. and Chavan, Santosh S. and Garadkar, K. M. and Mulla, Imtiaz S.} } @article { ISI:000287058100062, title = {Synthesis and characterization of chemically deposited nickel substituted CdSe thin film}, journal = {Journal of Alloys and Compounds}, volume = {509}, number = {6}, year = {2011}, month = {FEB}, pages = {2948-2951}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

The technologically important Cd(0.5)Ni(0.5)Se thin film has been developed by solution growth technique on non-conducting glass substrate in tartarate bath containing Cd(+2), Ni(+2) ions and sodium selenosulphate in an aqueous alkaline medium at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical absorption and electrical measurements. The X-ray diffraction study indicates that the film is polycrystalline in nature with hexagonal phase. Scanning electron micrograph shows that the film is homogeneous with well-defined grains. The films have high optical absorption coefficient. Thermoelectric power measurement shows p-type conduction mechanism. (C) 2010 Elsevier B.V. All rights reserved.

}, keywords = {Chemical synthesis, Crystal growth, Electrical conductivity, thin film}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2010.11.165}, author = {Hankare, P. P. and Jadhav, B. V. and Chate, P. A. and Sathe, D. J. and Mulla, Imtiaz S.} } @article { ISI:000292555200034, title = {Synthesis and characterization of cobalt substituted zinc ferri-chromites prepared by sol-gel auto-combustion method}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {22}, number = {8}, year = {2011}, month = {AUG}, pages = {1109-1115}, publisher = {SPRINGER}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

Mixed metal oxides having spinel structure shows interesting structural properties. In the present investigation, cobalt substituted zinc ferri-chromites were prepared by sol-gel auto-combustion method. The completion of solid state reaction and the formation of spinel phase were identified using X-ray diffraction technique. All the compounds exhibit cubic spinel symmetry and lattice constant shows an irregular trend with substitution of Co. Infra-red spectral studies shows an two strong bands, one around 600 cm(-1) which is attributed to the intrinsic vibrations of tetrahedral complexes and the other at 400 cm(-1) is due to octahedral one. The morphology and size of the particles was found out by scanning electron microscopy while the elemental compositions by elemental dispersive X-ray spectroscopy. The various compounds of the present system Zn1-xCoxFeCrO4 were also investigated for their thermal and electronic studies.

}, issn = {0957-4522}, doi = {10.1007/s10854-010-0268-7}, author = {Hankare, P. P. and Vader, V. T. and Sankpal, U. B. and Patil, R. P. and Jadhav, A. V. and Mulla, Imtiaz S.} } @article { ISI:000296558300011, title = {Chemical deposition of CuInSe2 thin films by photoelectrochemical applications}, journal = {Journal of Alloys and Compounds}, volume = {511}, number = {1}, year = {2012}, month = {JAN}, pages = {50-53}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12\% and 0.82\%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.

}, keywords = {Chemical bath deposition, Flat band potential, Photo response, Power output, Spectral response}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2011.04.084}, author = {Hankare, P. P. and Rathod, K. C. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Mulla, Imtiaz S.} } @article { ISI:000305534600005, title = {Photocatalytic degradation of phosphamidon using Ag-doped ZnO nanorods}, journal = {Toxicological and Environmental Chemistry}, volume = {94}, number = {6}, year = {2012}, month = {JAN}, pages = {1075-1085}, publisher = {TAYLOR \& FRANCIS LTD}, type = {Article}, address = {4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND}, abstract = {

The photocatalytic degradation of the organo-phosphorous pesticide phosphamidon at low concentration in aqueous solution on Ag-doped ZnO nanorods was investigated. Nanosized Ag-doped ZnO rods were synthesized by using a microwave assisted aqueous method. High molecular weight polyvinyl alcohol was used as a stabilizing agent. Composition and structure were investigated using energy-dispersive X-ray spectroscopy (EDAX) and X-ray diffraction (XRD). The XRD pattern reveals that ZnO nanorods are of hexagonal wurtzite structure. The average crystallite size calculated from Scherrer{\textquoteright}s relation was found to be 30 nm. The effects of catalyst loading, pH value, and initial concentration of phosphamidon on the photocatalytic degradation efficiency using Ag-doped ZnO nanorods as a photocatalyst have been discussed. The results revealed that Ag-doped ZnO nanorods with a diameter of 30 nm showed highest photocatalytic activity at a surface density of 1 g dm(-3). The catalyst doped with 0.2 mol\% Ag is effective for the degradation of phosphamidon with visible light. This opens a new possibility to decompose pesticides that are present in wastewater.

}, keywords = {Ag-doped zinc oxide, phosphamidon, Photocatalysis, Photodegradation}, issn = {0277-2248}, doi = {10.1080/02772248.2012.693495}, author = {Korake, Prakash V. and Sridharkrishna, R. and Hankare, P. P. and Garadkar, K. M.} } @article { ISI:000302817400015, title = {Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {23}, number = {4}, year = {2012}, month = {APR}, pages = {909-912}, publisher = {SPRINGER}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

Preparation of layered type semiconductor Mo0.5W0.5S2- thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS2 and WS2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10(-3)-10(-2) (Omega cm)(-1).

}, issn = {0957-4522}, doi = {10.1007/s10854-011-0519-2}, author = {Patil, A. A. and Hankare, P. P. and Gaikwad, A. B. and Garadkar, K. M.} }