@article { ISI:000342328300031,
	title = {Pulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies},
	journal = {ACS Applied Materials \& Interfaces},
	volume = {6},
	number = {18},
	year = {2014},
	month = {SEP},
	pages = {15881-15888},
	publisher = {AMER CHEMICAL SOC},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {<p>We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.</p>},
	keywords = {field emission, MoS2, photodiode heterostructures, pulsed laser deposition, thin film},
	issn = {1944-8244},
	doi = {10.1021/am503464h},
	author = {Late, Dattatray J. and Shaikh, Parvez A. and Khare, Ruchita T. and Kashid, Ranjit V. and Chaudhary, Minakshi V. and More, Mahendra A. and Ogale, Satishchandra B.}
}
@article { ISI:000373619000021,
	title = {Synthesis, microstructure, optical and field emission studies of iron vanadium oxide nanosheets},
	journal = {Journal of Physics D-Applied Physics},
	volume = {49},
	number = {14},
	year = {2016},
	month = {APR},
	pages = {145301},
	publisher = {IOP PUBLISHING LTD},
	address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND},
	abstract = {<p>We report a single step growth of thin graphene-like, densely packed FeV3O8 (FVO) nanosheets on silicon substrates via facile hydrothermal synthesis. These nanosheets have dimensions of a few microns with thin edges, offering very high aspect ratio. These FVO nanosheets exhibit excellent field emission behaviour with low turn on and threshold voltages of 1.3 V mu m(-1) and 1.7 V mu m(-1), respectively. The corresponding emitter delivers high emission current density of (similar to 1.650 mA cm(-2)) at fairly low applied field (similar to 4.00 V mu m(-1)).</p>},
	keywords = {FeV3O8, field emission, nanosheets},
	issn = {0022-3727},
	doi = {10.1088/0022-3727/49/14/145301},
	author = {Badadhe, Satish S. and Suryawanshi, Sachin R. and Naphade, Rounak A. and Chaudhary, Minakshi V. and More, Mahendra A. and Shelke, Manjusha V. and Ogale, Satishchandra B.}
}
