@article { ISI:000241010400014, title = {Characterization of Cd1-xZnxSe thin films deposited at low temperature by chemical route}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {17}, number = {12}, year = {2006}, month = {DEC}, pages = {1055-1063}, publisher = {SPRINGER}, type = {Article}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

Optoelectronic technologically important pseudo-binary Cd1-xZnxSe thin films with a variable composition ( 0 \< x \< 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd1-xZnxSe have been deposited on non-conducting glass substrate in tartarate bath containing Cd+2 and Zn+2 ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10(-7) to 10(-8) (Omega cm)(-1). All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.

}, issn = {0957-4522}, doi = {10.1007/s10854-006-9034-2}, author = {Hankare, P. P. and Chate, P. A. and Asabe, M. R. and Delekar, S. D. and Mulla, Imtiaz S. and Garadkar, K. M.} } @article { ISI:000246158300001, title = {Coprecipitation technique to prepare CoTa2O6 and CoNb2O6}, journal = {Materials Letter}, volume = {61}, number = {11-12}, year = {2007}, month = {MAY}, pages = {2127-2129}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

An aqueous solution of sodium hydroxide was used to coprecipitate cobalt and tantalum (or niobium) ions from their precursors as hydroxides under basic conditions. This precipitate yielded CoTa2O6 (CT) or CoNb2O6 (CN) ceramics on calcining at 700 degrees C, i.e. at a temperature much lower than 900 degrees C, reported for the formation of these powders prepared by the traditional solid state method. The X-ray diffraction (XRD) studies were employed to investigate phase contents and lattice parameters. The morphology of the synthesized powders was investigated by transmission electron microscopy (TEM). (c) 2006 Elsevier B.V. All rights reserved.

}, keywords = {Chemical synthesis, electronic materials, Oxides, X-ray methods}, issn = {0167-577X}, doi = {10.1016/j.matlet.2006.08.024}, author = {Mulla, Imtiaz S. and Natarajan, N. and Gaikwad, A. B. and Samuel, V. and Guptha, U. N. and Ravi, V.} } @article { ISI:000262796500004, title = {Characterization of MoSe2 thin film deposited at room temperature from solution phase}, journal = {Journal of Crystal Growth}, volume = {311}, number = {1}, year = {2008}, month = {DEC}, pages = {15-19}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap {\textquoteleft}E-g{\textquoteright} for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.

}, keywords = {Crystal morphology, Growth from solution, Inorganic compound, Polycrystalline deposition, Semiconducting materials, X-ray diffraction}, issn = {0022-0248}, doi = {10.1016/j.jcrysgro.2008.09.188}, author = {Hankare, P. P. and Patil, A. A. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Manikshete, A. H. and Mulla, Imtiaz S.} } @article { ISI:000256603500023, title = {Controlled synthesis of ZnO from nanospheres to micro-rods and its gas sensing studies}, journal = {Talanta}, volume = {75}, number = {5}, year = {2008}, month = {JUN}, pages = {1315-1319}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

1D ZnO rods are synthesized using less explored hydrazine method. Here we find, besides being combustible hydrazine can also be used as a structure-directing agent. The ratio of zinc nitrate (ZN) to hydrazine is found to control the morphology of ZnO. At lower concentration of ZN as compared with hydrazine the morphology of ZnO is found to be spherical. As we increase the hydrazine content the morphology changes from spherical (diameter similar to 100 nm) to the elongated structures including shapes like Y, T as well dumbbell (diameter similar to 40 nm and length similar to 150 nm). Interestingly for more than 50\% of hydrazine ZnO micro-rods are formed. Such rods are of diameter similar to 120 mn having length of about 1 mu m for ZN to hydrazine ratio of 1:9, isolated as well as bundle of rods are seen in scanning electron microscopy (SEM). The X-ray diffraction (XRD) reveals the phase formation with average particle size of 37 nm as calculated using Scherrer{\textquoteright}s formula. The high-resolution transmission electron microscopy (HRTEM) is also done to confirm the d-spacing in ZnO. Gas sensing study for these samples shows high efficiency and selectivity towards LPG at all operating temperatures. Photoluminescence (PL) study for these samples is performed at room temperature to find potential application as photoelectric material. (C) 2008 Elsevier B.V. All rights reserved.

}, keywords = {Hydrazine, LPG sensor, Nanostructures, photoluminescence, ZnO}, issn = {0039-9140}, doi = {10.1016/j.talanta.2008.01.063}, author = {Navale, Shalaka C. and Gosavi, S. W. and Mulla, Imtiaz S.} } @article { ISI:000296558300011, title = {Chemical deposition of CuInSe2 thin films by photoelectrochemical applications}, journal = {Journal of Alloys and Compounds}, volume = {511}, number = {1}, year = {2012}, month = {JAN}, pages = {50-53}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 mu A, 42.12\% and 0.82\%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm. (C) 2011 Published by Elsevier B.V.

}, keywords = {Chemical bath deposition, Flat band potential, Photo response, Power output, Spectral response}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2011.04.084}, author = {Hankare, P. P. and Rathod, K. C. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Mulla, Imtiaz S.} } @article { ISI:000330143000008, title = {CdS nanowires: ultra-long growth and enhanced field emission properties}, journal = {Vaccum}, volume = {101}, number = {SI}, year = {2014}, month = {MAR}, pages = {38-45}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Here, we report the synthesis of ultra-long CdS nanowires with aspect ratio similar to 8 x 10(4) by simple route of thermal evaporation technique. A change in the vertical arrangement of quartz boats leads in to the synthesis of ultra-long CdS nanovvires via high degree of condensation. This technique is seen to be cost effective and easy. The growth of the nanowires is found to be increased very rapidly from few micrometers to few millimeters. The possible reason for the growth of the ultra-long CdS nanowires is discussed in detail. The turn-on field defined for the current density of similar to 0.1 mu A/cm(2) has been found to be similar to 1.4, 1.45, 1 and 0.17 V/mu m for specimen A, B, C and D (specimens A-D, synthesized by variation in synthesis parameters) respectively. The turn-on field of the specimen D (similar to 0.17 V/mu m) is found to be quite superior than the value reported for other CdS nanoforms which is very remarkable. Simple way of bulk fabrication leads to the low turn-on value which indicates a possible use of the present emitter in the micro/nanoelectronics devices. (C) 2013 Elsevier Ltd. All rights reserved.

}, keywords = {Current stability, field emission, synthesis}, issn = {0042-207X}, doi = {10.1016/j.vacuum.2013.07.019}, author = {Chavan, Padmakar G. and Kashid, Ranjit V. and Badhade, Satish S. and Mulla, Imtiaz S. and More, Mahendra A. and Joag, Dilip S.} }