@article { ISI:000253181000037, title = {Synthesis, characterization of chemically deposited indium selenide thin films at room temperature}, journal = {Journal of Physics and Chemistry of Solids}, volume = {69}, number = {1}, year = {2008}, month = {JAN}, pages = {249-254}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, type = {Article}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

Polycrystalline In2Se3 semiconducting thin films were prepared by using relatively simple chemical bath deposition method at room temperature by the reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The as grown films were found to be transparent, uniform, well adherent and red in color. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, atomic absorption spectroscopy and energy dispersive atomic X-ray diffraction (EDAX). The XRD analysis of the film showed the presence of polycrystalline nature with hexagonal crystal structure. SEM study revels that the grains are homogenous, without cracks or pinholes and well covers the glass substrate. The optical absorption and electrical conductivity was measured. The direct optical band gap value for the films was found to be of the order of 2.35eV at room temperature and have specific electrical conductivity of the order of 10(-2) (Omega cm)(-1) showing n-type conduction mechanism. The utility of the adapted technique is discussed from the view-point of applications considering the optoelectric and structural data. (c) 2007 Elsevier Ltd. All rights reserved.

}, keywords = {Chemical synthesis, Semiconductor}, issn = {0022-3697}, doi = {10.1016/j.jpcs.2007.08.070}, author = {Asabe, M. R. and Chate, P. A. and Delekar, S. D. and Garadkar, K. M. and Mulla, Imtiaz S. and Hankare, P. P.} } @article { ISI:000289763700026, title = {Low temperature pH dependent synthesis of flower-like ZnO nanostructures with enhanced photocatalytic activity}, journal = {Materials Research Bulletin}, volume = {46}, number = {5}, year = {2011}, month = {MAY}, pages = {771-778}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, abstract = {

In the present study we have synthesized flower-like ZnO nanostructures comprising of nanobelts of 20 nm width by template and surfactant free low-temperature (4 degrees C) aqueous solution route. The ZnO nanostructures exhibit flower-like morphology, having crystalline hexagonal wurtzite structure with (001) orientation. The flowers with size between 600 and 700 nm consist of ZnO units having crystallite size of similar to 40 nm. Chemical and structural characterization reveals a significant role of precursor: ligand molar ratio, pH, and temperature in the formation of single-step flower-like ZnO at low temperature. Plausible growth mechanism for the formation of flower-like structure has been discussed in detail. Photoluminescence studies confirm formation of ZnO with the defects in crystal structure. The flower-like ZnO nanostructures exhibit enhanced photochemical degradation of methylene blue (MB) with the increased concentration of ligand, indicating attribution of structural features in the photocatalytic properties. (C) 2010 Elsevier Ltd. All rights reserved.

}, keywords = {Catalytic properties, Defects, Nanostructures, Optical properties, Semiconductor}, issn = {0025-5408}, doi = {10.1016/j.materresbull.2010.11.007}, author = {Vaishampayan, Mukta V. and Mulla, Imtiaz S. and Joshi, Satyawati S.} } @article { ISI:000345895200048, title = {Effect of Pd and Ce on the enhancement of ethanol vapor response of SnO2 thick films}, journal = {Sensors and Actuators B-Chemical}, volume = {207}, number = {A}, year = {2015}, month = {FEB}, pages = {383-390}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

The undoped SnO2 and 4 wt\% Ce-doped SnO2 were successfully synthesized by a facile co-precipitation route. The ternary systems were prepared by Pd-loading (0.5, 1.5 and 3.0 wt\%) on the 4 wt\% Ce-doped SnO2 nanoparticles. The structure and morphology of the nanocrystalline powders were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The nanocrystalline powders were screen printed on the alumina substrates to form thick films to investigate their gas response properties. The gas response studies reveal that 4 wt\% Ce-doped SnO2 with the loading of 3.0 wt\% Pd exhibits high response (88\%) towards ethanol (100 ppm) at an operating temperature of 250 degrees C with quick response (6 s) and rapid recovery (20 s). The high ethanol vapor response at lower operating temperature of this sensor is attributed to the spill-over mechanism of Pd particles present on the SnO2 surface and enhancement in alkalescence of SnO2 due to Ce-doping. (C) 2014 Elsevier B.V. All rights reserved.

}, keywords = {Ce-doped tin oxide, Gas sensor, Semiconductor, Thick film}, issn = {0925-4005}, doi = {10.1016/j.snb.2014.10.021}, author = {Bagal, L. K. and Patil, J. Y. and Vaishampayan, M. V. and Mulla, Imtiaz S. and Suryavanshi, S. S.} }