@article { ISI:000272376800026, title = {H(2)S gas sensitive indium-doped ZnO thin films: preparation and characterization}, journal = {Sensors and Actuators B-Chemical}, volume = {143}, number = {1}, year = {2009}, month = {DEC}, pages = {164-170}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

High quality indium-doped ZnO (IZO) thin films (similar to 100 nm) have been deposited onto the glass substrates by using a conventional spray pyrolysis technique. Precursors such as zinc acetate, indium chloride with Brij-35 (polyoxyethylene lauryl ether) as a non-ionic surfactant were used. The morphology, crystal structure, elemental analysis and the gas response properties were investigated by using SEM, TEM, XRD, AFM and XPS techniques. The films show hexagonal wurtzite structure which reveal variations in (100). (00 2) and (10 1) intensities with indium doping. The crystallite size calculated by Scherrer formula was in the range of 30-50 nm. The SEM and AFM analysis show 50-70 nm sized grains, while the TEM confirms formation of grains by similar to 10nm sized particles. Their response towards various gases was measured at different operating temperatures and different levels of In-dopants. The 3 at\% In-doped ZnO showed response as high as 13,000 for 1000ppm H(2)S at 250 degrees C. It exhibited fast response (similar to 2s) and recovery time (similar to 4 min). The gas response strongly depends on the morphology and indium concentration. The high gas response of IZO is explained on the basis of thickness dependent trap state density. (C) 2009 Elsevier B.V. All rights reserved.

}, keywords = {Hydrogen sulfide sensor, Indium oxide, Spray pyrolysis, thin film, Zinc oxide}, issn = {0925-4005}, doi = {10.1016/j.snb.2009.08.056}, author = {Badadhe, Satish S. and Mulla, Imtiaz S.} } @article { ISI:000292354600065, title = {Effect of aluminium doping on structural and gas sensing properties of zinc oxide thin films deposited by spray pyrolysis}, journal = {Sensors and Actuators B-Chemical}, volume = {156}, number = {2}, year = {2011}, month = {AUG}, pages = {943-948}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

A facile spray pyrolysis route is used to deposit aluminium doped ZnO (AZO) thin films on to the glass substrates. It is observed that on aluminium doping the particle size of ZnO reduces significantly; moreover, uniformity of particle also gets enhanced. Their XRD study reveals that intensity ratio of crystal planes depend on the aluminium doping concentration. The gas response studies of; similar to 800 nm thick Al-doped ZnO films at different operating temperatures show that 5 at\% Al-doped ZnO thin film exhibits highest response towards H(2)S gas at 200 degrees C. The results suggest that the gas response strongly depends on the particle size and aluminium doping in the ZnO. (C) 2011 Elsevier B.V. All rights reserved.

}, keywords = {Aluminium, H(2)S sensor, Spray pyrolysis, thin film, Zinc oxide}, issn = {0925-4005}, doi = {10.1016/j.snb.2011.03.010}, author = {Badadhe, Satish S. and Mulla, Imtiaz S.} } @article { ISI:000287058100062, title = {Synthesis and characterization of chemically deposited nickel substituted CdSe thin film}, journal = {Journal of Alloys and Compounds}, volume = {509}, number = {6}, year = {2011}, month = {FEB}, pages = {2948-2951}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

The technologically important Cd(0.5)Ni(0.5)Se thin film has been developed by solution growth technique on non-conducting glass substrate in tartarate bath containing Cd(+2), Ni(+2) ions and sodium selenosulphate in an aqueous alkaline medium at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical absorption and electrical measurements. The X-ray diffraction study indicates that the film is polycrystalline in nature with hexagonal phase. Scanning electron micrograph shows that the film is homogeneous with well-defined grains. The films have high optical absorption coefficient. Thermoelectric power measurement shows p-type conduction mechanism. (C) 2010 Elsevier B.V. All rights reserved.

}, keywords = {Chemical synthesis, Crystal growth, Electrical conductivity, thin film}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2010.11.165}, author = {Hankare, P. P. and Jadhav, B. V. and Chate, P. A. and Sathe, D. J. and Mulla, Imtiaz S.} }