@article {49379,
	title = {Efficient electrochemical synthesis of Cu 3 Si/Si hybrids as negative electrode material for lithium-ion battery},
	journal = {Journal of Alloys and Compounds},
	volume = {998},
	year = {2024},
	month = {SEP },
	pages = {174996},
	type = {Article},
	abstract = {<p>
	Nanoscaling and alloying techniques for silicon -based materials are widely recognized as vital technological approaches to effectively address the challenges associated with volume expansion and poor conductivity in silicon anodes. Developing short process, cost-effective preparation methods and shape controllable silicon -based materials is expected to improve their cyclability. Herein, utilizing the superior electrical conductivity of copper metal and its stable alloy interaction with silicon, the present study introduced a simple synthetic process by incorporating nanoscale Cu 2 O into a SiO 2 dioxide matrix under a combination of hydrothermal reaction with Cu (NO 3 ) 2 as the copper source and further sintering treatment. Under the conditions of a Cu:Si molar ratio to 3:8 under 850 degrees C by 2.6 V of constant electrolsyis for 3 h, straight silicon nanowires with a cross-sectional distribution were obtained. The Cu 3 Si alloy particles were enriched around silicon nanowires. Experimental testing was conducted to evaluate the electrochemical storage capabilities of Cu 3 Si/Si nanowires, resulting in an initial specific capacity of 2630.7 mAh g -1 and an initial coulombic efficiency of 88.94\%. After 100 charge -discharge cycles, the discharge specific capacity reached 1675.4 mAh g -1 , with a capacity retention rate of 66.20\%. This work demonstrates the effectiveness of constructing a Cu 3 Si conductive network for solving the volume expansion and conductivity problems of Si and the distinctive Cu 3 Si/Si architecture offers an exemplary model for the design of silicon -based composite anodes for advanced lithium -ion batteries.</p>
},
	keywords = {Cu3Si/Si alloy, Electrochemical storage capacity, Molten salt electrochemistry, Si nanowires},
	issn = {0925-8388},
	doi = {10.1016/j.jallcom.2024.174996},
	author = {Jiang, Siwei and Cheng, Jiaxu and Nayaka, G. P. and Dong, Peng and Zhang, Yingjie and Xing, Yubo and Zhang, Xiaolei and Du, Ning and Zhou, Zhongren}
}
