@article { ISI:000281153600066, title = {High current density, low threshold field emission from functionalized carbon nanotube bucky paper}, journal = {Applied Physics Letters}, volume = {97}, number = {7}, year = {2010}, month = {AUG}, pages = {073102}, publisher = {AMER INST PHYSICS}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, abstract = {

Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of {\textquoteleft}{\textquoteleft}as-grown{\textquoteright}{\textquoteright} sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler-Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm(2) and 8.5 mA/cm(2) for {\textquoteleft}{\textquoteleft}as-grown{\textquoteright}{\textquoteright} and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479049]

}, keywords = {Carbon nanotubes, current density, field emission, fullerenes}, issn = {0003-6951}, doi = {10.1063/1.3479049}, author = {Kakade, Bhalchandra A. and Pillai, Vijayamohanan K. and Late, Dattatray J. and Chavan, Padmakar G. and Sheini, Farid J. and More, Mahendra A. and Joag, Dilip S.} } @article { ISI:000365525900102, title = {High performance single crystalline PbWO4 nanorod field effect transistor}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {26}, number = {12, SI}, year = {2015}, month = {DEC}, pages = {10044-10048}, publisher = {SPRINGER}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 A mu m and width 20 A mu m. Thin film (similar to 100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm(2) V-1 s(-1) and I-ON/OFF ratio similar to 10(3) which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.

}, issn = {0957-4522}, doi = {10.1007/s10854-015-3685-9}, author = {Walke, Pravin S. and Patil, Vandana B. and Mulla, Imtiaz S. and Late, Dattatray J.} } @article {43585, title = {High performance humidity sensor and photodetector based on SnSe nanorods}, journal = {Materials Research Express}, volume = {3}, year = {2016}, month = {OCT}, pages = {Article Number: 105038}, abstract = {Tin selenide (SnSe) nanorods were synthesized using a. one-step solvothermal route and. their. humidity sensing and photodetection performance at room temperature were investigated. The results depict. that SnSe nanorod-based humidity and photosensors have. good long-term stability, are. highly sensitive and have. fast response and recovery times. In the. case of the. humidity sensor it was observed that the resistance of the films decreased. with increasing relative humidity (RH). The humidity sensing behaviors were investigated in the range. 11-97\% RHat room temperature. A. response time of similar to 68 s and recovery time of similar to 149 s were observed for. the humidity sensor. The photosensing behavior showed. typical response/recovery times of similar to 3 s with highly reproducible behavior.}, doi = {10.1088/2053-1591/3/10/105038}, author = {Pawbake, Amit S. and Jadkar, Sandesh R. and Late, Dattatray J.} } @article { ISI:000370211400055, title = {Highly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications}, journal = {ACS Applied Materials \& Interfaces}, volume = {8}, number = {5}, year = {2016}, month = {FEB}, pages = {3359-3365}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E12g and A1g at similar to 356 and similar to 420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469\% along with response time of similar to 12 s and recovery time of similar to 13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of similar to 51 s and recovery time of similar to 88 s were observed with sensitivity similar to 137\% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

}, keywords = {chemical vapor deposition, humidity sensor, nanoparticle, photosensor, thin film, tungsten disulfide}, issn = {1944-8244}, doi = {10.1021/acsami.5b11325}, author = {Pawbake, Amit S. and Waykar, Ravindra G. and Late, Dattatray J. and Jadkar, Sandesh R.} } @article { ISI:000375521000042, title = {Humidity sensing and photodetection behavior of electrochemically exfoliated atomically thin-layered black phosphorus nanosheets}, journal = {ACS Applied Materials \& Interfaces}, volume = {8}, number = {18}, year = {2016}, month = {MAY}, pages = {11548-11556}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

Recent investigations on two-dimensional black phosphorus material mainly highlight work on few atomic layers and multilayers. It is still unknown if the black phosphorus atomically thin sheet is an ideal structure for the enhanced gas solid interactions due to its large surface area. To further investigate this concern, we have synthesized few atomic layer thick nanosheets of black phosphorus using an electrochemical exfoliation method. The surface morphology and thickness of the nanosheet were identified using AFM, TEM, and Raman spectroscopy. The black phosphorus nanosheet thick film device was used for the gas sensing application with exposure to different humidites. Further, the few layer black phosphorus nanosheet based transistor shows good mobility and on/off ratio. The UV light irradiation on the black phosphorus nanosheet shows good response time. The overall results show that the few layer thick film of black phosphorus nanosheets sample exhibits creditable sensitivity and better recovery time to be used in humidity sensor and photodetector applications.

}, keywords = {black phosphorus, electrochemical exfoliation, humidity sensor, photodetector}, issn = {1944-8244}, doi = {10.1021/acsami.5b10247}, author = {Erande, Manisha B. and Pawar, Mahendra S. and Late, Dattatray J.} } @article {43943, title = {High-Performance Sensing Behavior Using Electronic Ink of 2D SnSe2 Nanosheets.}, journal = {Chemistry Select}, volume = {2}, year = {2017}, month = {MAY}, chapter = {4068-4075}, abstract = {

Most of the recent research work on layered chalcogenides is understandably focused on single atomic layers. However, it is uncertain if the single layer units are most ideal structures for enhanced gas-solid interactions. To probe this concern, we have synthesized few layer thick SnSe2\ nanosheets ink using liquid exfoliation method. The morphology, thickness / layering and elemental analysis of the sheets were characterized by using SEM, TEM, AFM, Raman spectroscopy and by XPS. The two dimensional (2D) SnSe2\ nanosheets sensor device with different thicknesses was assessed for the humidity and gas sensing performances with exposure to humidity in different conditions. The results show that compared to the bulk / thicker counterpart, sensor device of few SnSe2\ layers exhibit excellent sensitivity, recovery and ability to be tune the sensing performance with thickness and can be used in lab on chip devices.

}, doi = {10.1002/slct.201700261}, author = {Pawar, Mahendra and Kadam, Sunil and Late, Dattatray J.} } @article {44233, title = {High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures}, journal = {AIP Advances}, volume = {8}, year = {2018}, month = {JAN}, pages = {015117}, type = {Article}, abstract = {

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).

}, issn = {2158-3226}, doi = {10.1063/1.5004769}, author = {Gupta, Bipin Kumar and Kedawat, Garima and Gangwar, Amit Kumar and Nagpal, Kanika and Kashyap, Pradeep Kumar and Srivastava, Shubhda and Singh, Satbir and Kumar, Pawan and Suryawanshi, Sachin R. and Seo, Deok Min and Tripathi, Prashant and More, Mahendra A. and Srivastava, O. N. and Hahm, Myung Gwan and Late, Dattatray J.} } @article {46247, title = { Hydrothermal growth of MoSe2 nanoflowers for photo- and humidity sensor applications}, journal = {Sensors and Actuators A-Physical}, volume = {295}, year = {2019}, month = {AUG}, pages = {160-168}, type = {Article}, abstract = {

In the present investigation, we report the synthesis of molybdenum diselenide (MoSe2) nanoflowers by facile hydrothermal method for photo- and humidity sensor applications. The obtained samples were characterized thoroughly by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD spectrum shows crystalline nature of the sample. Raman spectroscopy shows two prominent vibration modes of E-2 (g)1 and A(1g) at (2) over tilde 41 and (2) over tilde 83 cm(-1) respectively. The crystalline nature of the sample confirmed with the TEM. The MoSe2 nanoflowers based sensor shows high photosensitivity and good response to humidity with excellent prolong stability. The maximum photoresponsitivity of (1) over tilde 94\% along with response of (4) over tilde0 ms and recovery time of (4) over tilde8 ms were observed for the sample. In case of humidity sensor, response time of (5) over tilde3 s and recovery time of (1) over tilde3 s with maximum sensitivity -74\% were observed under humidity environments. It suggests that, MoSe2 nanoflowers appear as a potential candidate for constructing high-performance nanoelectronics devices. (C) 2019 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.sna.2019.05.045}, author = {Shelke, Nitin T. and Late, Dattatray J.} }