@article { ISI:000242931900034,
	title = {Field emission from oriented tin oxide rods},
	journal = {Thin Solid Films},
	volume = {515},
	number = {4},
	year = {2006},
	month = {DEC},
	pages = {1450-1454},
	publisher = {ELSEVIER SCIENCE SA},
	type = {Article},
	address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
	abstract = {<p>Tin oxide (SnO2) films were grown on silicon substrates by a wet chemical route. It was found from scanning electron microscopy investigations that oriented SnO2 rods normal to the substrates were obtained. Field emission studies were carried out in diode configuration in an all metal ultra high vacuum chamber at a base pressure similar to 1.33 x 10(-8) mbar. The {\textquoteleft}onset{\textquoteright} field required to draw 0.1 mu A/cm(2) current density from the emitter cathode was found to be similar to 3.4 V/mu m for SnO2 rods. The field emission current and applied field follows the Folwer-Nordheim relationship in low field regime. The observed results indicate that the field emission characteristics of chemically grown SnO2 structures are comparable to the vapor grown nanostructures. (c) 2006 Elsevier B.V. All rights reserved.</p>},
	keywords = {field emission, microstructures, scanning electron microscopy, tin oxide},
	issn = {0040-6090},
	doi = {10.1016/j.tsf.2006.04.034},
	author = {Deshpande, A. C. and Koinkar, Pankaj M. and Ashtaputre, S. S. and More, Mahendra A. and Gosavi, S. W. and Godbole, P. D. and Joag, Dilip S. and Kulkarni, S. K.}
}
@article { ISI:000258037300073,
	title = {RuO(2) doped SnO(2) nanobipyramids on Si (100) as a field emitter},
	journal = {Thin Solid Films},
	volume = {516},
	number = {18},
	year = {2008},
	month = {JUL},
	pages = {6388-6391},
	publisher = {ELSEVIER SCIENCE SA},
	address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
	abstract = {<p>Thin films of RuO(2): SnO(2) nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0. 1 gA/ cm 2 current density has been found to be 0.2 V/mu m. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of I tA is observed to be good. Our field emission results on RuO(2): SnO(2) nanobipyramids indicate that, RuO(2): SnO(2) nanobipyramids are a potential candidate for futuristic field emission based devices. (c) 2008 Elsevier B.V. All rights reserved.</p>},
	keywords = {doped semiconductor, field emitter, field enhancement factor, ruthenium oxide, tin oxide},
	issn = {0040-6090},
	doi = {10.1016/j.tsf.2007.12.160},
	author = {Bhise, Ashok B. and Late, Dattatray J. and Ramgir, Niranjan S. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.}
}
