@article { ISI:000228412500017,
	title = {Structural rationalisation of co-crystals formed between trithiocyanuric acid and molecules containing hydrogen bonding functionality},
	journal = {Chemistry - A European Journal},
	volume = {11},
	number = {8},
	year = {2005},
	note = {Symposium on Chemistry-A European Conference - Stimulating Concepts in Chemistry, Inst Sci Ingenierie Supramoleculaires, Strasbourg, FRANCE, APR 15, 2005},
	month = {APR},
	pages = {2433-2439},
	publisher = {WILEY-BLACKWELL},
	type = {Article},
	address = {COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA},
	abstract = {<p>Crystallisation of trithiocyanuric acid (TTCA) from various organic solvents that have hydrogen bonding capability (acetone, 2-butanone, dimethylformamide, dimethyl sulfoxide, methanol and acetonitrile) leads to the formation of co-crystals in which the solvent molecules are incorporated together with TTCA in the crystal structure. Structure determination by single-crystal X-ray diffraction reveals that these co-crystals can be classified into different groups depending upon the topological arrangement of the TTCA molecules in the crystal structure. Thus, three different types of single-tape arrangements of TTCA molecules and one type of double-tape arrangement of TTCA molecules are identified. In all co-crystals, hydrogen-bonding interactions are formed through the involvement of N-H bonds of TTCA molecules in these tapes and the other molecule in the co-crystal. Detailed rationalisation of the structural properties of these co-crystals is presented.</p>},
	keywords = {crystal engineering, hydrogen bonds, nitrogen heterocycles, structure elucidation},
	issn = {0947-6539},
	doi = {10.1002/chem.200400340},
	author = {Ahn, Sung-Hoon and PrakashaReddy, J. and Kariuki, B. M. and Chatterjee, S. and Ranganathan, A. and Pedireddi, V. R. and Rao, C. N. R. and Harris, Kenneth D. M.}
}
@article {43232,
	title = {Sensing behavior of atomically thin-layered MoS2 transistors},
	journal = {ACS Nano},
	volume = {7},
	year = {2013},
	month = {JUN},
	pages = {4879-4891},
	abstract = {Most of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light Irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.},
	doi = {10.1021/nn400026u},
	author = {Late, Dattatray J. and Huang, Yi-Kai and Liu, Bin and Acharya, Jagaran and Shirodkar, Sharmila N. and Luo, Jiajun and Yan, Aiming and Charles, Daniel and Waghmare, Umesh V. and Dravid, Vinayak P. and Rao, C. N. R.}
}
