@article {45667,
	title = {Compositional dependence of electrical conduction in solution grown Zn1-xCrxSe thin films: a correlation},
	journal = {Journal of Materials Science: Materials in Electronics},
	volume = {28 },
	year = {2017},
	month = {MAR},
	pages = {5070-5074},
	type = {Article},
	abstract = {Zinc selenide (ZnSe) has a typical band gap of 2.7 eV suitable for window application and can easily be synthesized using a liquid phase chemical bath deposition. An attempt is made to tune its band gap and other characteristics to cope with a maxima of the solar spectrum by deliberate addition of Cr3+. ZnSe and Zn1-xCrxSe (0 <= x <= 0.35) thin films were obtained under the controlled deposition conditions (temperature = 70 A degrees C, time = 210 min, pH = 10, etc). The compositional analysis showed Zn2+ replacement by Cr3+. The X-ray photoelectron spectroscopy revealed chemical states of the constituents Zn, Cr and Se as 2(+), 3(+) and 2(-) respectively. The electrical conductivity and thermo-power measurements in the 300-550 K temperature range showed semiconducting nature of the material and that the electrical conduction is of the n-type. The electrical conductivity is found to be increased continuously up to x = 0.05 and then decreased for further increase in x. The Hall-probe measurements also confirmed n-type conduction. The average Hall coefficient for pure ZnSe is -1.03 x 10(7) cm(3)/C whereas, it is -4.55 x 10(6) cm(3)/C for a sample with x = 0.35.},
	doi = {10.1007/s10854-016-6144-3},
	author = {Deshmukh, S. L. and Pingale, P. C. and Chavan, G. T. and Pawar, S. T. and Prakshale, V. M. and Kamble, S. S. and Jadkar, S. R. and Chaure, N. B. and Gopinath, C. S. and Maldar, N. N. and Deshmukh, L. P.}
}
