@article {45542,
	title = {Enhancement of field electron emission in topological insulator Bi2Se3 by Ni doping},
	journal = {Physical Chemistry Chemical Physics},
	volume = {20},
	year = {2018},
	month = {JUN},
	pages = {18429-18435},
	type = {Article},
	abstract = {Nanostructures of bismuth selenide (Bi2Se3), a 3D topological insulator material, and nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the field emission properties. An enrichment in the field electron emission (FE) properties in terms of the threshold and turn-on field values of Bi2Se3 and Ni doped Bi2Se3 nanostructures was measured at a base pressure of \~{}1 {\texttimes} 10-8 mbar. Using the background of the Fowler{\textendash}Nordheim (FN) theory a field enhancement factor (β) of 5.7 {\texttimes} 103 and a threshold field value of 2.5 V μm-1 for 7.5\% Ni doped Bi2Se3 were determined by investigating the J{\textendash}E plot of the FE data. The value of β is three times higher than that of pure Bi2Se3 confirming the superior FE properties. The emission current was found to be very stable with the property of long standing durability as a negligible amount of variation was observed when measured at a constant value of 5 mA for 3 hours. The experimental results signify many opportunities for potential applications of Ni doped Bi2Se3 as a source of electrons in scanning as well as transmission electron microscopy, flat panel displays and as an X-ray generator, etc.},
	doi = {10.1039/c8cp01982g},
	author = {Mazumder, K. and Sharma, A. and Kumar, Y. and Bankar, P. and More, M. A. and Devan, R. and Shirage, P. M.}
}
