@article {44348,
	title = {Polycrystalline MnGe2 thin films on InAs(001) substrates},
	journal = {Thin Solid Films},
	volume = {657},
	year = {2018},
	month = {JUL},
	pages = {38-41},
	type = {Article},
	abstract = {We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.},
	doi = {10.1016/j.tsf.2018.05.007},
	author = {Gutierrez-Naranjo, David and Holguin-Momaca, Jose T. and Solis-Canto, Oscar O. and Gupta, Preeti and Poddar, Pankaj and Espinosa Magana, Francisco and Olive-Mendez, Sion F.}
}
