@article { ISI:000304888700036,
	title = {Visible-light-induced photosplitting of water over gamma {\textquoteleft}-Fe4N and gamma {\textquoteleft}-Fe4N/alpha-Fe2O3 nanocatalysts},
	journal = {Journal of Physical Chemistry C},
	volume = {116},
	number = {22},
	year = {2012},
	month = {JUN},
	pages = {12156-12164},
	publisher = {AMER CHEMICAL SOC},
	address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
	abstract = {<p>The application of gamma{\textquoteright}-Fe4N, a noble-metal-free, low-cost catalyst, in the photosplitting of neat water into stoichiometric amounts of H-2 and O-2 under visible-light irradiation is reported for the first time. The catalyst showed optical absorption and photoluminescence emission bands in the entire visible region. The photocatalytic water-splitting activity was wavelength-dependent, the quantum efficiency for H-2 evolution being ca. 1.7 and 0.7\% at excitation wavelengths of 450 and 500 nm, respectively. Addition of electron donor/acceptor sacrificial reagents considerably affected the yield and stoichiometry of H-2 and O-2. At the same time, the product yield increased in a composition-dependent manner for (gamma{\textquoteright}-Fe4N)(x) + (alpha-Fe2O3)(1-x) nanocomposites. This activity augmentation is ascribed to the better dispersion of the active component gamma{\textquoteright}-Fe4N and also to the availability of more active surface sites at Fe4N/Fe2O3 contacts. Moreover, the proximity of the valence band potential of the component photosystems promotes the preferential transfer/entrapment of photoexcited hole carriers. We envisage that the defect/impurity-induced interband-gap energy states may play a vital role in these charge-transfer processes, leading thereby to more effective e(-)-h(+) separation and the enhanced rate of the water-splitting reaction. First-principles electronic structure analysis suggests that the extraordinary photocatalytic and optical properties of intermetallic gamma{\textquoteright}-Fe4N may arise from the particle-size-dependent changes in electronic structure.</p>},
	issn = {1932-7447},
	doi = {10.1021/jp303255f},
	author = {Dhanasekaran, P. and Salunke, Hemant G. and Gupta, Narendra M.}
}
