@article { ISI:000339861500096,
	title = {Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O},
	journal = {Nanoscale},
	volume = {6},
	number = {15},
	year = {2014},
	month = {AUG},
	pages = {9148-9156},
	publisher = {ROYAL SOC CHEMISTRY},
	address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
	abstract = {<p>Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, {\textquoteleft}{\textquoteleft}as grown{\textquoteright}{\textquoteright} CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of similar to 470 mu A cm(-2)) white in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2P on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.</p>},
	issn = {2040-3364},
	doi = {10.1039/c3nr06917f},
	author = {Debgupta, Joyashish and Devarapalli, Rami Reddy and Rahman, Shakeelur and Shelke, Manjusha V. and Pillai, Vijayamohanan K.}
}
