@article { ISI:000340514500021,
	title = {Quantum dot-decorated silicon nanowires as efficient photoelectrodes for photoelectrochemical hydrogen generation},
	journal = {Journal of Materials Chemistry A},
	volume = {2},
	number = {33},
	year = {2014},
	month = {SEP},
	pages = {13352-13358},
	publisher = {ROYAL SOC CHEMISTRY},
	address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
	abstract = {<p>Quantum dot-decorated wide band gap semiconductors, such as TiO2, ZnO, SnO2, etc., which have electron mobilities of less than 200 cm(2) V-1 S-1 have been well studied as the photoelectrodes for photovoltaics and photoelectrochemical water splitting. Herein, we report CdSe quantum dot decorated-silicon nanowires (SiNWs) as photoelectrodes for photoelectrochemical water splitting. SiNWs have a comparatively higher electron mobility than metal oxides. A photocurrent density of around 6.1 mA cm(-2) was obtained for the CdSe/SiNWs photoelectrode, which is nearly five times higher than that for SiNWs alone and which also shows a good transient photocurrent response. The band energy level alignment was also studied between Si and CdSe by observing the corresponding flat band potentials from a Mott-Schottky analysis.</p>},
	issn = {2050-7488},
	doi = {10.1039/c4ta02775b},
	author = {Devarapalli, Rami Reddy and Kamaja, Chaitanya Krishna and Shelke, Manjusha V.}
}
