02525nas a2200277   4500008004100000022001400041245010300055210006900158260000800227300000700235490000700242520162300249653001801872653001301890653001301903653002301916653002001939653002701959100001601986700002302002700002402025700002502049700002102074700002702095856012502122       2023                        eng d  a0137-588100aRole of ions and their transporters in combating salt stress in Pandanus odorifer (Forssk.) Kuntze0 aRole of ions and their transporters in combating salt stress in   cMAY  a660 v453 a<p>
	Soil salinity is a major environmental constraint causing huge losses in crop production. Pandanus odorifer (Forssk.) Kuntze is an aromatic monocot plant species belonging to the family Pandanaceae, which grows naturally on the saline soils along the coasts of Asia, Southeast Asia, and Polynesia. The plants are dioecious and highly fertile, and the consistent saline sprays, strong winds, and severe soil salinity hardly affect their growth and fertility. Hence, understanding the mechanism of high salinity tolerance in P. odorifer could provide major advances in overcoming salinity stress in crop plants. In the present study, we analyzed control (0 M NaCl) and treated (1 M NaCl treatment for 3 weeks) plants of P. odorifer to understand the role of ion distribution, ion transport, and related mechanisms under salt stress. Using a combination of ionomics and transcriptomics approaches, we identified the molecular mechanisms contributing to the high salinity stress in P. odorifer. Under NaCl stress, there was a significant increase in Na, Cl, and other ions in leaves, while the concentrations of Si, Fe, Ni, and Ti decreased. Similarly, in roots, the levels of Na, Mg, Cd, and Cr were significantly high, while the levels of other ions decreased. Most of the genes related to ion transport and homeostasis, such as NHX1, CLC-C, SOS1, HAK, and ABC transporters, were upregulated in 1 M NaCl stress conditions. This study revealed that vacuolar sequestration of Na+ and the distribution of ions in the roots and shoots play significant roles in the salt-stress tolerance mechanism of P. odorifer.</p>
10aIon transport10aIonomics10aPandanus10aSalinity tolerance10aTranscriptomics10aVacuolar sequestration1 aRashmi, Deo1 aAnsari, Waquar, A.1 aKadoo, Narendra, Y.1 aBarvkar, Vitthal, T.1 aDeshmukh, Rupesh1 aNadaf, Altafhusain, B.  uhttp://library.ncl.res.in/content/role-ions-and-their-transporters-combating-salt-stress-pandanus-odorifer-forssk-kuntze02630nas a2200289   4500008004100000245014600041210006900187260000800256300001400264490000600278520164500284653001801929653001801947653002701965653001701992653002402009653003402033653000802067100001702075700001902092700001802111700002302129700001902152700001902171700001902190856013102209       2024                        eng d00aScanning tunneling microscopy investigation of synaptic behavior in AgInS2 quantum dots: effect of ion transport in neuromorphic applications0 aScanning tunneling microscopy investigation of synaptic behavior  cMAR  a7226-72360 v73 a<p>
	Scanning tunneling microscopy (STM) is a powerful technique for investigating the nanoscale properties of functional materials. Additionally, scanning tunneling spectroscopy (STS) facilitates the determination of the local density of states (LDOS) within the material. In this study, we present an exploration of the resistive switching (RS) properties and neuromorphic computing capabilities of individual AgInS2 quantum dots, utilizing STM and STS techniques. By examining the material's bandgap and its temperature dependence, we uncover a nonlinear variation below the Debye temperature and a linear trend at higher temperatures. Moreover, STS measurements demonstrate changes in the conducting states induced by localized pulses, further confirming the unique characteristics of the quantum dots. The experimental devices constructed by using these quantum dots effectively replicate the RS properties observed at the nanoscale. To assess the neuromorphic application of the devices, pulse transient measurements simulating the learning and forgetting processes were conducted. The gradual set and reset processes successfully mimic the information retention and erasure capabilities essential for neuromorphic computing. Notably, the resistive switching mechanism in these devices is attributed to localized ionic transport, which highlights the significant involvement of ionic species in the observed RS behavior. The outcomes of this study contribute to the fundamental understanding of RS properties in single AgInS2 quantum dots and offer valuable insights into their potential applications in neuromorphic computing.</p>
10acorona poling10aIon transport10aneuromorphic computing10aquantum dots10aresistive switching10aScanning tunneling microscopy10aSTS1 aBetal, Atanu1 aChetia, Anupam1 aBera, Jayanta1 aSaikia, Dibyajyoti1 aSharma, Ashish1 aRath, Arup, K.1 aSahu, Satyajit  uhttp://library.ncl.res.in/content/scanning-tunneling-microscopy-investigation-synaptic-behavior-agins2-quantum-dots-effect-ion