01943nas a2200301   4500008004100000022001400041245009700055210006900152260008100221300001100302490000700313520092500320653002701245653000701272653002501279653001401304100001601318700001801334700001701352700001501369700001701384700002401401700002101425700002601446700002301472700002201495856012401517       2015                        eng d  a0022-372700aReduction of graphene oxide by 100 MeV Au ion irradiation and its application as H2O2 sensor0 aReduction of graphene oxide by 100 MeV Au ion irradiation and it  aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcSEP  a3651050 v483 a<p>Graphene oxide (GO) synthesized from a modified Hummer's method was reduced (referred, rGO) by using 100 MeV Au ion species and its response to the sense H2O2 was investigated. The changes in the atomic composition and structural properties of rGO after irradiation were studied using x-ray diffraction, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy. These results suggested that the removal of the oxygen-containing functional groups and the improvement of the electrochemical performance of reduced graphene oxide (rGO) after ion irradiation. Raman spectroscopic results revealed the increase in the disorder parameter (I-D/I-G) after Au ion irradiation and also the formation of a large number of small sp(2) domains due to the electronic energy loss of ion beam. The resultant rGO was investigated for H2O2 sensing using electrochemical techniques and it showed a good response.</p>10aelectronic energy loss10aGO10aion beam irradiation10areduction1 aHareesh, K.1 aJoshi, R., P.1 aShateesh, B.1 aAsokan, K.1 aKanjilal, D.1 aLate, Dattatray, J.1 aDahiwale, S., S.1 aBhoraskar, Vasant, N.1 aHaram, Santosh, K.1 aDhole, Sanjay, D.  uhttp://library.ncl.res.in/content/reduction-graphene-oxide-100-mev-au-ion-irradiation-and-its-application-h2o2-sensor-102573nas a2200205   4500008004100000245017100041210006900212260000800281300002700289490000800316520177100324100002302095700001802118700002102136700001802157700002202175700002402197700002202221856012402243       2016                        eng d00aSurface chemical bonds, surface-enhanced Raman scattering, and dielectric constant of SiO2 nanospheres in-situ decorated with Ag-nanoparticles by electron-irradiation0 aSurface chemical bonds surfaceenhanced Raman scattering and diel  cDEC  aArticle Number: 2349010 v1203 aNanostructures of dielectric materials decorated with metal nanoparticles are of great scientific interest; however, the involved synthesis methods are complicated and require multistep chemical processing, including functionalization of the dielectric surfaces. In the present work, without chemical processes, silver nanoparticles of average sizes in the range of 11 to 15 nm were in-situ synthesized and decorated on SiO2 nanospheres in a single step process by irradiating a solution (AgNO3-polyvinylpyrrolidone (PVP)-SiO2 nanospheres) with 6 MeV electrons at 1.5 x 10(15) e(-)/cm(2), 3.0 x 10(15) e(-)/cm(2), and 4.5 x 10(15) e(-)/cm(2) fluences. The electron irradiated solutions were characterized with different surface and other techniques. The results revealed that the SiO2 nanospheres were uniformly decorated with Ag nanoparticles, and the prominent chemical bonds involved were Ag-O, Si-O-Ag, and Si-Ag. Moreover, the sizes and the decoration density of Ag nanoparticles could be tailored by varying electron fluence. The Surface-enhanced Raman scattering (SERS) of 4-aminothiophenol (4-ATP) solutions was studied using substrates in the form of thin coatings of the solutions of Ag-decorated SiO2 nanospheres. The appearance of the characteristic SERS peaks of both 4-ATP and 4, 4'-dimercaptoazobenzene (4, 4'-DMAB) in Raman spectra confirmed the conversion of a fraction of 4-ATP into 4, 4'-DMAB in the presence of Ag nanoparticles. Composites in the form of thin films were synthesized from the mixture solutions of PVP and Ag-decorated SiO2 nanospheres. The dielectric constant of each thin film was higher as compared to polymers, and could be tailored by varying electron fluence used for decorating Ag nanoparticles. Published by AIP Publishing.1 aPhatangare, A., B.1 aDhole, S., D.1 aDahiwale, S., S.1 aMathe, V., L.1 aBhoraskar, S., V.1 aLate, Dattatray, J.1 aBhoraskar, V., N.  uhttp://library.ncl.res.in/content/surface-chemical-bonds-surface-enhanced-raman-scattering-and-dielectric-constant-sio2