01497nas a2200169   4500008004100000245007000041210006900111260000800180300001200188490000600200520092700206100002401133700002601157700002301183700002001206856010101226       2015                        eng d00aEmerging energy applications of two-dimensional layered materials0 aEmerging energy applications of twodimensional layered materials  cMAR  a118-1570 v33 a<p>Atomically thin semiconducting transition metal dichalcogenides (TMDCs) layered materials have recently been emerged as an exciting area of research due to accessibility for easy synthesis using various chemical and physical methods. These two-dimensional (2D) layered materials with single layer have direct and wide band gap due to which, they are more suitable for nanoelectronics and optoelectronics device applications. Here, we present a review of the energy related aspects of atomically thin layered materials like MoS2, WS2, MoSe2, WSe2, InSe, GaSe, GaTe, MoTe2, WTe2 etc. for supercapacitor, solar cell, lithium ion battery and water splitting application. By significantly assessing various materials and comparing their performances with challenging technology, the advantages and disadvantages of this promising area of energy materials are recognized, which may provide guidelines for future progress.</p>1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar1 aChakravarty, Disha1 aRatha, Satyajit  uhttp://library.ncl.res.in/content/emerging-energy-applications-two-dimensional-layered-materials01914nas a2200217   4500008004100000022001400041245013600055210006900191260007700260300001400337520106100351653001801412653002101430653002201451653001501473653001901488653001301507100002301520700002401543856012901567       2015                        eng d  a1434-194800aExfoliation of bulk inorganic layered materials into nanosheets by the rapid quenching method and their electrochemical performance0 aExfoliation of bulk inorganic layered materials into nanosheets   aBOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANYbWILEY-V C H VERLAG GMBHcAPR  a1973-19803 a<p>We report herein the results of our investigations on the synthesis of transition-metal dichalcogenide (TMDC) semiconductor layered materials of MoS2, WS2, MoSe2, and WSe2 by the rapid quenching method. The bulk powders were added to deionized water in a polypropylene tube and subsequently flushed with argon gas. Thirty rapid freezing (30 s in a liquid nitrogen bath) and heating (20 min in an oil bath at 60 degrees C) cycles were then carried out. The reaction product was obtained in a yield in excess of 60 wt.-%, which indicates that the method can be utilized on an industrial scale for the production of 2D nanosheets. The as-synthesized products were then characterized by TEM, which revealed nanosheet-like morphologies. Raman spectroscopy confirmed the high quality of the nanosheet samples. The exfoliated samples also showed good electrochemical performance. Of the TMDC samples investigated, the WSe2 nanosheets were found to give the best performance due to their uniform morphology, large surface area, and fewest number of defects.</p>10achalcogenides10aElectrochemistry10aLayered compounds10aMolybdenum10aNanostructures10aTungsten1 aChakravarty, Disha1 aLate, Dattatray, J.  uhttp://library.ncl.res.in/content/exfoliation-bulk-inorganic-layered-materials-nanosheets-rapid-quenching-method-and-their-0