02417nas a2200241 4500008004100000022001400041245010300055210006900158260007300227300001000300490000800310520155400318653003501872653001701907653001901924653000801943653000801951100002301959700002501982700002002007700001902027856012902046 2005 eng d a0169-433200aDeposition of indium nitride films by activated reactive evaporation process - a feasibility study0 aDeposition of indium nitride films by activated reactive evapora aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY a73-780 v2453 a

Indium nitride (InN) films are deposited by `activated reactive evaporation (ARE)' process using parallel plate coupled nitrogen plasma (radio frequency source of 13.56 MHz) and evaporation of pure indium powder by resistive heating. Depositions are carried out by varying RF plasma power, on n-type silicon &LANGBRAC; 1 0 0&RANGBRAC; substrate, maintained at room temperature, at a nitrogen gas pressure of 1.06 x 10(-1) Pa (8 x 10 (-4) Torr). The film's crystallinity was examined by X-ray diffraction (XRD) and topography by scanning electron microscope (SEM). The diffraction pattern shows polycrystalline nature of the deposited films with characteristics of hexagonal structure. XRD peak intensity increases with increase in power. SEM observations show a smooth and pinhole free surface having improved quality of film with hexagonal structure as the power is increased from 60 to 120 W. Primary X-ray photoelectron spectroscopy (XPS) results show binding energies of the In 3d levels and N 1s level matching well with that of stoichiometric InN. Further, the refractive index of the films, measured by ellipsometry, is in the range of η = 2.79-2.91 with the variation of plasma power, which is in good agreement with the standard value for indium nitride (η = 2.9). These results indicate the feasibility of using, `activated reactive evaporation (ARE)' process for indium nitride depositions on silicon &LANGBRAC; 1 0 0&RANGBRAC; substrates maintained at room temperature. © 2004 Elsevier B.V. All rights reserved.

10aactivated reactive evaporation10aellipsometry10aindium nitride10aSEM10aXRD1 aPatil, Sheetal, J.1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A. uhttp://library.ncl.res.in/content/deposition-indium-nitride-films-activated-reactive-evaporation-process-feasibility-study-001919nas a2200229 4500008004100000022001400041245008800055210006900143260007300212300001200285490000800297520112800305653003001433653000901463653000901472653002501481653000801506100002501514700002001539700001901559856011101578 2005 eng d a0169-433200aDeposition of PTFE thin films by RF plasma sputtering on < 100 > silicon substrates0 aDeposition of PTFE thin films by RF plasma sputtering on 100 sil aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY a202-2070 v2453 a

Polymers have been studied extensively due to the wonderful array of properties presented by them. Polymer materials can be coated/deposited by various techniques like sputtering (magnetron, ion beam, RF or dc), plasma polymerization, etc. and can be used in coatings, paint industries, etc. The present study deals with the RF sputter deposition of poly(tetrafluoro ethylene) (PTFE), commonly known as Teflon. Depositions were carried out on mirror polished silicon (1 0 0) substrates at different powers in the range of 100-200 W. The deposition time was kept constant at 60 min. The sputtered film shows lower contact angle of 50&DEG; with water and 44&DEG; with diiodomethane, a lower interfacial tension value of 0.76 dyne/cm, indicating hydrophilicity and good adhesion of the film with the substrate. FHR indicates presence of C-F, C-F-2 bonding groups in the deposited film. Further, XPS study shows presence of CF3 (292.2 eV), CF2 (290.8 eV), C-F (288.0 eV) and C-CF (286.4 eV) moieties indicating deposition of PTFE films at higher power levels of plasma. © 2004 Elsevier B.V. All rights reserved.

10aContact angle measurement10aFTIR10aPTFE10aRF plasma sputtering10aXPS1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A. uhttp://library.ncl.res.in/content/deposition-ptfe-thin-films-rf-plasma-sputtering-100-silicon-substrates-001770nas a2200253 4500008004100000022001400041245009900055210006900154260007300223300001400296490000700310520087300317653003001190653000901220653001301229653002501242653000801267100002201275700002501297700002001322700001901342700002601361856012901387 2006 eng d a0167-577X00aElectron beam induced surface cross-linking of functional monomers coated on silicon substrate0 aElectron beam induced surface crosslinking of functional monomer aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcMAY a1360-13650 v603 a

A 3: 1 composition of functional monomer: multifunctional acrylate was spin coated and later cross-linked under the influence of keV electron irradiation on the surface of silicon to generate a surface-anchored cross-linked network bearing functional moieties. Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) as well as wetting angle measurements were used for the analysis of functional monomer cross-linked surfaces. Results of the surface reconstruction of surfaces and electron irradiated on coated silicon wafers reveal that long-term hydrophilic surfaces can be achieved. Thus, the surface architecture can be favorably manipulated by using this remarkable technique with a Suitable combination of functional monomers and cross-linkers. (c) 2005 Elsevier B.V. All rights reserved.

10aelectron beam irradiation10aFTIR10aPolymers10asurface modification10aXPS1 aMahapatra, S., K.1 aBodas, Dhananjay, S.1 aMandale, A., B.1 aGangal, S., A.1 aBhoraskar, Vasant, N. uhttp://library.ncl.res.in/content/electron-beam-induced-surface-cross-linking-functional-monomers-coated-silicon-substrate-002228nas a2200181 4500008004100000022001400041245009300055210006900148260006100217300001400278490000700292520155500299100001501854700002001869700001901889700001801908856012001926 2006 eng d a0022-246100aSynthesis of corrosion inhibitive poly(2,5-dimethylaniline) coatings on low carbon steel0 aSynthesis of corrosion inhibitive poly25dimethylaniline coatings a233 SPRING STREET, NEW YORK, NY 10013 USAbSPRINGERcMAY a2851-28580 v413 a

An attempt has been made towards the synthesis of strongly adherent poly(2,5-dimethylaniline) coatings on low carbon steel substrates, with an objective of examining the possibility of using this polymer for corrosion protection of steel in chloride environment. In this work, the poly(2,5-dimethylaniline) coatings were synthesized by electrochemical polymerization of 2,5-dimethylaniline using sodium salicylate as a supporting electrolyte. The characterization of these coatings was carried out by cyclic voltammetry, UV-visible absorption spectroscopy, Fourier transform infrared spectroscopy and scanning electron microscopy. The results of these characterizations indicate that the aqueous salicylate solution is a suitable medium for the electrochemical polymerization of 2,5-dimethylaniline to generate strongly adherent and smooth poly(2,5-dimethylaniline) coatings on low carbon steel substrates. The performance of poly(2,5-dimethylaniline) as protective coating against corrosion of low carbon steel in aqueous 3% NaCl was assessed by the open circuit potential and the potentiodynamic polarization measurements. The potentiodynamic polarization measurement reveals that the poly(2,5-dimethylaniline) coating increases the corrosion potential and reduces the corrosion rate of low carbon steel almost by a factor of 50. This study clearly ascertains that the poly(2,5-dimethylaniline) has outstanding capability to protect low carbon steel against corrosion in chloride environment. (c) 2006 Springer Science + Business Media, Inc.

1 aShinde, V.1 aSainkar, S., R.1 aGangal, S., A.1 aPatil, P., P. uhttp://library.ncl.res.in/content/synthesis-corrosion-inhibitive-poly25-dimethylaniline-coatings-low-carbon-steel-0