02465nas a2200241   4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856011902104       2006                        eng d  a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C  aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV  a2331-23360 v673 a<p>Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.</p>10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K.  uhttp://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-001626nas a2200241   4500008004100000022001400041245009600055210006900151260007300220300001400293490000700307520076800314653001401082653002301096653002701119100002001146700001801166700002001184700001901204700001701223700002201240856012201262       2009                        eng d  a1293-255800aEffect of sintering temperature and thermoelectric power studies of the system MgFe2-xCrxO40 aEffect of sintering temperature and thermoelectric power studies  aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcDEC  a2075-20790 v113 a<p>Mixed metal oxides showing the spinel structure exhibit interesting structural and electrical properties. Substances with specific compositions in the system MgFe2-xCrxO4 were synthesized by the simple co-precipitation method and have been investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM) to study the effect of temperature on the size of particles and grains. The infrared spectrum shows, two strong bands around 600 and 500 cm(-1). An elemental composition of one of the samples, MgFeCrO4 was found by energy dispersive X-ray spectroscopy (EDS). The thermoelectric power measurements carried out from room temperature to 500 degrees C, show both n-type and p-type behavior. (C) 2009 Elsevier Masson SAS. All rights reserved.</p>10asynthesis10aTemperature effect10aThermoelectric studies1 aHankare, P., P.1 aVader, V., T.1 aSankpal, U., B.1 aGavali, L., V.1 aSasikala, R.1 aMulla, Imtiaz, S.  uhttp://library.ncl.res.in/content/effect-sintering-temperature-and-thermoelectric-power-studies-system-mgfe2-xcrxo4-0