02465nas a2200241 4500008004100000022001400041245008600055210006900141260010600210300001400316490000700330520159100337653001501928653002201943100001901965700001801984700002002002700001902022700002202041700002002063700002102083856011902104 2006 eng d a0022-369700aPhotoelectrochemical properties of electrochemically deposited CdIn2S4 thin films0 aPhotoelectrochemical properties of electrochemically deposited C aTHE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLANDbPERGAMON-ELSEVIER SCIENCE LTDcNOV a2331-23360 v673 a

Thin films of CdIn2S4 have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn2S4 thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn2S4 thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (eta) of the cell are 69 and 2.94%, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

10aThin films10aX-ray diffraction1 aKokate, A., V.1 aAsabe, M., R.1 aDelekar, S., D.1 aGavali, L., V.1 aMulla, Imtiaz, S.1 aHankare, P., P.1 aChougule, B., K. uhttp://library.ncl.res.in/content/photoelectrochemical-properties-electrochemically-deposited-cdin2s4-thin-films-001645nas a2200241 4500008004100000022001400041245009700055210006900152260006900221300001000290490000800300520079800308653001201106653002301118653001501141653002201156100002001178700001901198700001801217700001901235700002201254856012701276 2010 eng d a0925-838800aPreparation and characterization of CuInSe2 thin films by chemical bath deposition technique0 aPreparation and characterization of CuInSe2 thin films by chemic aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcJUN a78-810 v5003 a

Copper indium diselenide (CIS) thin films have been deposited using a precursor solution containing copper sulphate, indium trichoride, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature. The as grown brown colored films were found to be well adherent to glass substrates. The films were characterized by X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, optical absorption, electrical resistivity, and thermo electric measurement techniques. The analysis of optical absorption data shows band-gap energy (E-g) to be 1.1 eV. The electrical resistivity of the thin film was found to be of the order of 10(2) (Omega cm). Thermoelectric power measurement shows n-type conduction. (C) 2010 Published by Elsevier B.V.

10aCuInSe210aOptical properties10aThin films10aX-ray diffraction1 aHankare, P., P.1 aRathod, K., C.1 aChate, P., A.1 aJadhav, A., V.1 aMulla, Imtiaz, S. uhttp://library.ncl.res.in/content/preparation-and-characterization-cuinse2-thin-films-chemical-bath-deposition-technique-001777nas a2200229 4500008004100000022001400041245008200055210006900137260007400206300001200280490000700292520097400299100002001273700001901293700001801312700001901330700001901349700002401368700002101392700002201413856011201435 2011 eng d a0957-452200aPhotoelectrochemical applications of In2Se3 thin films by chemical deposition0 aPhotoelectrochemical applications of In2Se3 thin films by chemic aVAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDSbSPRINGERcAPR a359-3640 v223 a

Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1 M) + S(1 M) + Na2S(1 M) |C-(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720 V and 0.196 eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310 mV, 20 mu A, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575 nm.

1 aHankare, P., P.1 aRathod, K., C.1 aAsabe, M., R.1 aJadhav, A., V.1 aHelavi, V., B.1 aChavan, Santosh, S.1 aGaradkar, K., M.1 aMulla, Imtiaz, S. uhttp://library.ncl.res.in/content/photoelectrochemical-applications-in2se3-thin-films-chemical-deposition-001984nas a2200229 4500008004100000022001400041245007500055210006900130260009200199300001400291490000700305520116500312653002401477653001701501653001901518653002101537100002401558700002301582700002001605700002101625856010801646 2012 eng d a0277-224800aPhotocatalytic degradation of phosphamidon using Ag-doped ZnO nanorods0 aPhotocatalytic degradation of phosphamidon using Agdoped ZnO nan a4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLANDbTAYLOR & FRANCIS LTDcJAN a1075-10850 v943 a

The photocatalytic degradation of the organo-phosphorous pesticide phosphamidon at low concentration in aqueous solution on Ag-doped ZnO nanorods was investigated. Nanosized Ag-doped ZnO rods were synthesized by using a microwave assisted aqueous method. High molecular weight polyvinyl alcohol was used as a stabilizing agent. Composition and structure were investigated using energy-dispersive X-ray spectroscopy (EDAX) and X-ray diffraction (XRD). The XRD pattern reveals that ZnO nanorods are of hexagonal wurtzite structure. The average crystallite size calculated from Scherrer's relation was found to be 30 nm. The effects of catalyst loading, pH value, and initial concentration of phosphamidon on the photocatalytic degradation efficiency using Ag-doped ZnO nanorods as a photocatalyst have been discussed. The results revealed that Ag-doped ZnO nanorods with a diameter of 30 nm showed highest photocatalytic activity at a surface density of 1 g dm(-3). The catalyst doped with 0.2 mol% Ag is effective for the degradation of phosphamidon with visible light. This opens a new possibility to decompose pesticides that are present in wastewater.

10aAg-doped zinc oxide10aphosphamidon10aPhotocatalysis10aPhotodegradation1 aKorake, Prakash, V.1 aSridharkrishna, R.1 aHankare, P., P.1 aGaradkar, K., M. uhttp://library.ncl.res.in/content/photocatalytic-degradation-phosphamidon-using-ag-doped-zno-nanorods-0