02335nas a2200253   4500008004100000022001400041245005400055210005400109260008100163300002700244490000600271520147600277653003101753653003001784653001901814653001801833100002801851700002201879700002401901700002401925700002301949700002401972856008501996       2016                        eng d  a2053-159100aEnhanced field emission behavior of layered MoSe20 aEnhanced field emission behavior of layered MoSe2  aTEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDbIOP PUBLISHING LTDcMAR  aArticle Number: 0350030 v33 a<p>Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.</p>10aatomically thin nanosheets10achemical vapor deposition10afield emission10alayered MoSe21 aSuryawanshi, Sachin, R.1 aPawbake, Amit, S.1 aPawar, Mahendra, S.1 aJadkar, Sandesh, R.1 aMore, Mahendra, A.1 aLate, Dattatray, J.  uhttp://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mose202461nas a2200253   4500008004100000022001400041245013900055210006900194260007100263300001400334490000600348520151800354653003001872653002001902653001701922653001601939653001401955653002301969100002201992700002502014700002402039700002402063856012002087       2016                        eng d  a1944-824400aHighly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications0 aHighly transparent waferscale synthesis of crystalline WS2 nanop  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB  a3359-33650 v83 a<p>In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E12g and A1g at similar to 356 and similar to 420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of similar to 12 s and recovery time of similar to 13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of similar to 51 s and recovery time of similar to 88 s were observed with sensitivity similar to 137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.</p>10achemical vapor deposition10ahumidity sensor10ananoparticle10aphotosensor10athin film10atungsten disulfide1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aLate, Dattatray, J.1 aJadkar, Sandesh, R.  uhttp://library.ncl.res.in/content/highly-transparent-wafer-scale-synthesis-crystalline-ws2-nanoparticle-thin-film-0