01938nas a2200253 4500008004100000245006500041210006400106260000800170300001400178490000600192520116700198100002401365700001801389700001301407700002101420700002801441700001601469700001601485700002001501700002401521700002401545700001901569856009601588 2013 eng d00aSensing behavior of atomically thin-layered MoS2 transistors0 aSensing behavior of atomically thinlayered MoS2 transistors cJUN a4879-48910 v73 aMost of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light Irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.1 aLate, Dattatray, J.1 aHuang, Yi-Kai1 aLiu, Bin1 aAcharya, Jagaran1 aShirodkar, Sharmila, N.1 aLuo, Jiajun1 aYan, Aiming1 aCharles, Daniel1 aWaghmare, Umesh, V.1 aDravid, Vinayak, P.1 aRao, C., N. R. uhttp://library.ncl.res.in/content/sensing-behavior-atomically-thin-layered-mos2-transistors01819nas a2200241 4500008004100000022001400041245007300055210006900128260009000197300000900287490000600296520096100302100002601263700002601289700002301315700002001338700002301358700002201381700002301403700002101426700002401447856010601471 2013 eng d a2045-232200aSuperior field emission properties of layered WS2-RGO nanocomposites0 aSuperior field emission properties of layered WS2RGO nanocomposi aMACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLANDbNATURE PUBLISHING GROUPcNOV a32820 v33 a

We report here the field emission studies of a layered WS2-RGO composite at the base pressure of similar to 1 x 10(-8) mbar. The turn on field required to draw a field emission current density of 1 mu A/cm(2) is found to be 3.5, 2.3 and 2 V/mu m for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of similar to 800 mu A/cm(2) is drawn at an applied field of 4.1 V/mu m from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.

1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J. uhttp://library.ncl.res.in/content/superior-field-emission-properties-layered-ws2-rgo-nanocomposites-001518nas a2200169 4500008004100000022001400041245004400055210004300099260008700142300001100229490000800240520095600248100002401204700001901228700002101247856008001268 2014 eng d a0003-695100aSingle-layer MoSe2 based NH3 gas sensor0 aSinglelayer MoSe2 based NH3 gas sensor a1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScDEC a2331030 v1053 a

High performance chemical sensor is highly desirable to detect traces of toxic gas molecules. Two dimensional (2D) transition metal dichalcogenides (TMDC) semiconducting materials has attracted as high performance gas sensor device applications due to unique properties such as high surface to volume ratio. Here, we describe the utilization of single-layer MoSe2 as high-performance room temperature NH3 gas sensors. Our single-layer MoSe2 based gas sensor device shows comprehensible detection of NH3 gas down to 50 ppm. We also confirmed gas sensing measurement by recording the Raman spectra before and after exposing the device to NH3 gas, which subsequently shows the shift due to charger transfer and analyte gas molecule adsorption on surface of single-layer MoSe2 nanosheet. Our investigations show the potential use of single-layer and few layer thick MoSe2 and other TMDC as high-performance gas sensors. (C) 2014 AIP Publishing LLC.

1 aLate, Dattatray, J.1 aDoneux, Thomas1 aBougouma, Moussa uhttp://library.ncl.res.in/content/single-layer-mose2-based-nh3-gas-sensor-001406nas a2200133 4500008004100000245013100041210006900172260000800241300001100249490000600260520085700266100002401123856012501147 2015 eng d00aSingle-layer graphene doping through molecular interaction: field-effect transistor and atomic force microscopy investigations0 aSinglelayer graphene doping through molecular interaction fielde cMAR a52-58 0 v13 a

The single-layer graphene has attracted considerable attention for the promising applications in new generation nanoelectronics and optoelectronics devices because of the high deal carrier mobility. Present investigations deal with the effect of chemical/molecular doping with varying the concentration of strong electron acceptor molecule such as tetracyanoethylene (TCNE) on transfer characteristics of single-layer graphene transistor. The Dirac point shift toward the positive gate voltage as a function of increasing concentration of TCNE molecules clearly indicates that the graphene is P-type doped. Our results indicate that the fermi energy level can be controlled by the amount of molecular doping in order to obtain graphene transistors with tunable Dirac points, which can be easily configured into functional nanoelectronic devices.

1 aLate, Dattatray, J. uhttp://library.ncl.res.in/content/single-layer-graphene-doping-through-molecular-interaction-field-effect-transistor-and01579nas a2200241 4500008004100000022001400041245009800055210006900153260007300222300001000295490000800305520070800313653002501021653001901046653001001065653001901075100002801094700002201122700002201144700002401166700002301190856012401213 2015 eng d a0304-399100aSpectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter0 aSpectral analysis of the emission current noise exhibited by few aPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSbELSEVIER SCIENCE BVcFEB a51-570 v1493 a

Spectral analysis of the field emission (FE) current fluctuations has been carried out at the base pressure similar to 1 x 10(-8) mbar. The emission current stability investigated at preset value of 2 mu A is characterized by `step like fluctuation. The spectral analysis performed on a FFT (Fast Fourier Transform) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha as similar to 1.05. The estimated value of alpha implies that the current fluctuations are mainly due the various processes occurring on atomic scale like adsorption, migration, and/or desorption of the residual gas species on the emitter surface. (C) 2014 Elsevier B.V. All rights reserved.

10aCurrent fluctuations10afield emission10aNoise10aWS2 nanosheets1 aSuryawanshi, Sachin, R.1 aKolhe, Pankaj, S.1 aRout, Chandra, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttp://library.ncl.res.in/content/spectral-analysis-emission-current-noise-exhibited-few-layer-ws2-nanosheets-emitter-001608nas a2200265 4500008004100000022001400041245009900055210006900154260006400223300000700287490000600294520068100300653002200981653002201003653000901025653002201034653002301056100002301079700002501102700002301127700002201150700002401172700002301196856012301219 2015 eng d a1847-980400aStable field emission from layered MoS2 nanosheets in high vacuum and observation of 1/f noise0 aStable field emission from layered MoS2 nanosheets in high vacuu aJANEZA TRDINE 9, RIJEKA, 51000, CROATIAbINTECH EUROPEcAPR a100 v53 a

Field emission and current noise of hydrothermally synthesized MoS2 nanosheets are investigated in ultra-high-vacuum and industrially suited high-vacuum conditions. The study reveals that the emission turn-on field is pressure dependent. Moreover, the MoS2 nanosheets exhibit more stable field-electron emission in high-vacuum than in ultra-high-vacuum conditions. The investigations on field-emission current fluctuations show features of 1/f-type noise in ultra-high-vacuum and high-vacuum conditions, attributed to adsorption and desorption processes. The post-field-emission results indicate the MoS2 nanosheets are a robust field emitter in high-vacuum conditions.

10aElectron emission10alayered materials10aMoS210aNoise measurement10aRaman spectroscopy1 aKashid, Ranjit, V.1 aJoag, Pracheetee, D.1 aThripuranthaka, M.1 aRout, Chandra, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttp://library.ncl.res.in/content/stable-field-emission-layered-mos2-nanosheets-high-vacuum-and-observation-1f-noise-101652nas a2200169 4500008004100000245010000041210006900141260008100210300001200291520094700303100002401250700002401274700002301298700002001321700001401341856012701355 2015 eng d00aSynthesis of GdB6 nanostructures using nanosecond (Nd: YAG) laser: field emission investigation0 aSynthesis of GdB6 nanostructures using nanosecond Nd YAG laser f aGuangzhou, Peoples R ChinabIEEE, 345 E 47th ST, New York, NY 10017 USAcJUL a122-1233 a

We herein report field emission characteristics of GdB6 nanostructures grown directly on a pellet via laser processing (laser fluence similar to 6 J/cm(2)). The laser processed GdB6 pellet was characterized by X-ray diffraction, which revealed no change in phase upon laser processing. The values of the turn-on field required to draw emission current density of 1 mu A/cm(2) is found to be similar to 2.95 V/mu m, for the laser processed GdB6 emitter. Furthermore, the Fowler-Nordheim (F-N) plot exhibits non-linear behavior over the entire range of applied field and the field enhancement factor (beta) calculated from slope of the F-N plot (low field region) was found to be similar to 543. The emission current stability over a period of 3h was observed to be fairly good. The observed results demonstrate that laser processing can be efficiently used to make GdB6 nanostructure emitter having potential for practical applications.

1 aSuryawanshi, S., R.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aSingh, Anil, K.1 aSinha, S. uhttp://library.ncl.res.in/content/synthesis-gdb6-nanostructures-using-nanosecond-nd-yag-laser-field-emission-investigation01024nas a2200169 4500008004100000020002200041245005600063210005500119260009200174520040100266653001800667100001400685700002000699700002200719700002400741856008900765 2016 eng d a978-1-5090-2419-300aSingle SnO2 Nanowire: field emission investigations0 aSingle SnO2 Nanowire field emission investigations a345 E 47th St, New York, NY 10017 USAbIEEE, 345 E 47th St, New York, NY 10017 USAcJUL3 a

The present work deals with the field emission study on multiple SnO2 nanowires synthesized by simple thermal evaporation method. For the realistic analysis of the Fowler Nordheim plot of the semiconducting SnO2, field emission behavior of a single nanowire is studied. A relevant model explaining the field emission mechanism from the single SnO2 nanowire is also proposed by the authors.

10aSnO2 nanowire1 aJoshi, D.1 aJoag, Dilip, S.1 aMulla, Imtiaz, S.1 aLate, Dattatray, J. uhttp://library.ncl.res.in/content/single-sno2-nanowire-field-emission-investigations02621nas a2200217 4500008004100000022001400041245014000055210006900195260011000264300001600374490000600390520171800396100002602114700002202140700002602162700002402188700002502212700001802237700002102255856012702276 2016 eng d a2046-206900aSitu fabrication of highly crystalline CdS decorated Bi2S3 nanowires (nano-heterostructure) for visible light photocatalyst application0 aSitu fabrication of highly crystalline CdS decorated Bi2S3 nanow aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcFEB a23508-235170 v63 a

In situ synthesis of the orthorhombic Bi2S3 nanowires decorated with hexagonal CdS nanoparticles (nano-heterostructure) has been demonstrated by a facile solvothermal method. The tiny 5-7 nm CdS spherical nanoparticles are decorated on the surfaces of 30-40 nm Bi2S3 nanowires, successfully. Structural, morphological and optical studies clearly show the existence of CdS on the nanowires. A possible sequential deposition growth mechanism is proposed on the basis of experimental results to reveal the formation of the nano heterostructure. The heterostructures have been used as a photocatalyst for hydrogen production as well as degradation of methylene blue under solar light. The maximum hydrogen evolution i.e. 4560 and 2340 mu mol h(-1) 0.5 g was obtained from H2S splitting and glycerol degradation for Bi2S3 NWs decorated with CdS nanoparticles (nano-heterostructure) which is higher than that of the Bi2S3 NWs (3000 and 1170 mu mol h(-1) 0.5 g, respectively). The enhanced photocatalytical hydrogen evolution efficiency of the heterostructures is mainly attributed to its nanostructure. In the nano heterostructure, the CdS nanoparticles control the charge carrier transition, recombination, and separation, while the Bi2S3 nanowire serves as a support for the CdS nanoparticles. The photogenerated electron's migration is faster than the holes from the inside of a CdS nanoparticle to its surface or to the phase interface, resulting in a relatively higher hole density inside the CdS nanoparticle leaving electron density at surface of the Bi2S3 NWs. This influences the photocatalytic activity under solar light. Such nano-heterostructures may have potential in other photocatalytic reactions.

1 aPanmand, Rajendra, P.1 aSethi, Yogesh, A.1 aDeokar, Rajashree, S.1 aLate, Dattatray, J.1 aGholap, Haribhau, M.1 aBaeg, Jin-Ook1 aKale, Bharat, B. uhttp://library.ncl.res.in/content/situ-fabrication-highly-crystalline-cds-decorated-bi2s3-nanowires-nano-heterostructure-001548nas a2200181 4500008004100000245008300041210006900124260000800193300001800201490000600219520090300225100003201128700002401160700002201184700002601206700002401232856011001256 2016 eng d00aSnS2 nanoflakes for efficient humidity and alcohol sensing at room temperature0 aSnS2 nanoflakes for efficient humidity and alcohol sensing at ro cOCT a105421-1054270 v63 aWe report a one step facile hydrothermal synthesis of layered SnS2 nanoflakes. The as-synthesized nanosheets are characterized using X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy (TEM). The humidity sensing behavior of SnS2 nanoflake sensor device were investigated in the range of 11-97% of relative humidity (RH) at room temperature. The response time of similar to 85 s and recovery time of similar to 6 s were observed for the SnS2 nanoflake based humidity sensor. A maximum sensitivity of 11.300% is recorded. We also investigate the SnS2 nanoflake based alcohol sensing properties towards methanol, ethanol and iso-propyl alcohol. An exclusive selectivity towards methanol with a response of 1580 is shown as compared to other analytes. The response time of similar to 67 s and recovery time of just 5 s were observed for the SnS2 nanoflake based methanol sensor.1 aBharatula, Lakshmi, Deepika1 aErande, Manisha, B.1 aMulla, Imtiaz, S.1 aRout, Chandra, Sekhar1 aLate, Dattatray, J. uhttp://library.ncl.res.in/content/sns2-nanoflakes-efficient-humidity-and-alcohol-sensing-room-temperature01980nas a2200193 4500008004100000245018500041210006900226260000800295300001600303490000600319520118800325100002501513700002401538700002201562700002501584700002401609700002301633856013001656 2016 eng d00aSpatially branched CdS-Bi2S3 heteroarchitecture: single step hydrothermal synthesis approach with enhanced field emission performance and highly responsive broadband photodetection0 aSpatially branched CdSBi2S3 heteroarchitecture single step hydro cSEP a95092-951000 v63 aThis report explores the controlled hierarchical synthesis of CdS nanostructure branches on Bi2S3 nanorod cores via a facile single step hydrothermal route. Morphological and structural studies reveal the formation of CdS-Bi2S3 heteroarchitecture with excellent stoichiometry between the constituent elements. The growth of CdS over Bi2S3 strongly depends on optimization of the reaction conditions, especially low PVP concentration. Furthermore, the as-synthesized CdS-Bi2S3 heteroarchitecture demonstrates multifunctionality in field emission and photoresponse. Interestingly, the CdS-Bi2S3 heteroarchitecture shows enhanced field emission properties such as low turn-on field (similar to 1.8 V mu m(-1) for 10 mu A cm(2)), high emission current density and better current stability in comparison to Bi2S3 and other nanostructures. The as-synthesized CdS-Bi2S3 heteroarchitecture exhibits considerable response and recovery times, similar to 207 ms and 315 ms, respectively in comparison to bare Bi2S3 nanostructures (similar to 655 ms and 678 ms). The present results demonstrate CdS-Bi2S3 heteroarchitecture as a potential candidate for future optoelectronic device applications.1 aBankar, Prashant, K.1 aPawar, Mahendra, S.1 aPawbake, Amit, S.1 aWarule, Sambhaji, S.1 aLate, Dattatray, J.1 aMore, Mahendra, A. uhttp://library.ncl.res.in/content/spatially-branched-cds-bi2s3-heteroarchitecture-single-step-hydrothermal-synthesis-approach02573nas a2200205 4500008004100000245017100041210006900212260000800281300002700289490000800316520177100324100002302095700001802118700002102136700001802157700002202175700002402197700002202221856012402243 2016 eng d00aSurface chemical bonds, surface-enhanced Raman scattering, and dielectric constant of SiO2 nanospheres in-situ decorated with Ag-nanoparticles by electron-irradiation0 aSurface chemical bonds surfaceenhanced Raman scattering and diel cDEC aArticle Number: 2349010 v1203 aNanostructures of dielectric materials decorated with metal nanoparticles are of great scientific interest; however, the involved synthesis methods are complicated and require multistep chemical processing, including functionalization of the dielectric surfaces. In the present work, without chemical processes, silver nanoparticles of average sizes in the range of 11 to 15 nm were in-situ synthesized and decorated on SiO2 nanospheres in a single step process by irradiating a solution (AgNO3-polyvinylpyrrolidone (PVP)-SiO2 nanospheres) with 6 MeV electrons at 1.5 x 10(15) e(-)/cm(2), 3.0 x 10(15) e(-)/cm(2), and 4.5 x 10(15) e(-)/cm(2) fluences. The electron irradiated solutions were characterized with different surface and other techniques. The results revealed that the SiO2 nanospheres were uniformly decorated with Ag nanoparticles, and the prominent chemical bonds involved were Ag-O, Si-O-Ag, and Si-Ag. Moreover, the sizes and the decoration density of Ag nanoparticles could be tailored by varying electron fluence. The Surface-enhanced Raman scattering (SERS) of 4-aminothiophenol (4-ATP) solutions was studied using substrates in the form of thin coatings of the solutions of Ag-decorated SiO2 nanospheres. The appearance of the characteristic SERS peaks of both 4-ATP and 4, 4'-dimercaptoazobenzene (4, 4'-DMAB) in Raman spectra confirmed the conversion of a fraction of 4-ATP into 4, 4'-DMAB in the presence of Ag nanoparticles. Composites in the form of thin films were synthesized from the mixture solutions of PVP and Ag-decorated SiO2 nanospheres. The dielectric constant of each thin film was higher as compared to polymers, and could be tailored by varying electron fluence used for decorating Ag nanoparticles. Published by AIP Publishing.1 aPhatangare, A., B.1 aDhole, S., D.1 aDahiwale, S., S.1 aMathe, V., L.1 aBhoraskar, S., V.1 aLate, Dattatray, J.1 aBhoraskar, V., N. uhttp://library.ncl.res.in/content/surface-chemical-bonds-surface-enhanced-raman-scattering-and-dielectric-constant-sio202609nas a2200217 4500008004100000022001400041245009600055210006900151260011000220300001600330490000600346520174400352100002602096700002202122700002002144700002802164700002402192700002302216700002502239856012702264 2016 eng d a2046-206900aSurface modification of aligned CdO nanosheets and their enhanced field emission properties0 aSurface modification of aligned CdO nanosheets and their enhance aTHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDbROYAL SOC CHEMISTRYcAPR a41261-412670 v63 a

Porous aligned CdO nanosheets were grown on a cadmium (Cd) substrate by the simple and cost effective method of thermal annealing. Further, decoration of gold (Au) nanoparticles on the porous aligned CdO nanosheets (specimen A) was achieved by coating with a Au thin film and subsequent annealing treatment. The average diameters of decorated Au nanoparticles were found to be 15 nm, 21 nm and 28 nm for the Au thin films with 20 s, 40 s and 60 s (specimens B, C, and D) coating times. Detailed characterizations, such as structural and morphological analysis of porous CdO nanosheets and Au/CdO nanocomposite (Au decorated porous CdO nanosheets), have been carried out using a Field Emission Scanning Electron Microscope (FESEM), X-ray diffraction (XRD) and a Transmission Electron Microscope (TEM). Field emission studies of specimens A, B, C and D were carried out in the planar diode configuration. Turn-on fields of 1.9 V mu m(-1), 1.1 V mu m(-1), 2.4 V mu m(-1) and 2.8 V mu m(-1) have been found for the emission current density of 10 RA cm(-2) for specimens A, B, C and D, respectively. The observed low turn -on field of specimen B (Au diameter of 15 nm) was found to be superior to other semiconducting nanostructures reported in the literature. The field emission current stability over a period of 3 h at the preset current density of 1 RA cm(-2) is found to be excellent for all specimens. To the best of our knowledge, field emission studies along with surface modification of porous aligned CdO nanosheets have not been reported in the literature. The simple synthesis route, facile surface modification and the superior field emission results make the present emitter very suitable for micro/nano electronic devices.

1 aBagal, Vivekanand, S.1 aPatil, Girish, P.1 aDeore, Amol, B.1 aSuryawanshi, Sachin, R.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aChavan, Padmakar, G. uhttp://library.ncl.res.in/content/surface-modification-aligned-cdo-nanosheets-and-their-enhanced-field-emission-properties02224nas a2200301 4500008004100000022001400041245013400055210006900189260006900258300001200327490000800339520114800347653003001495653001901525653001901544653002301563653003501586653003801621653001701659100001501676700001801691700001601709700001701725700001401742700002401756700002201780856012001802 2016 eng d a0254-058400aSynthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique0 aSynthesis and selfassembly of dumbbell shaped ZnO submicron stru aPO BOX 564, 1001 LAUSANNE, SWITZERLANDbELSEVIER SCIENCE SAcFEB a152-1570 v1693 a

We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. (C) 2015 Elsevier B.V. All rights reserved.

10aElectron microscopy (STEM10aMicrostructure10aNanostructures10aOptical properties10aPhotoluminescence spectroscopy10aRaman spectroscopy and scattering10aTEM and SEM)1 aBorade, P.1 aJoshi, K., U.1 aGokarna, A.1 aLerondel, G.1 aWalke, P.1 aLate, Dattatray, J.1 aJejurikar, S., M. uhttp://library.ncl.res.in/content/synthesis-and-self-assembly-dumbbell-shaped-zno-sub-micron-structures-using-low-002230nas a2200193 4500008004100000245012900041210006900170260000800239300001800247490000600265520149600271100002201767700002101789700002001810700002301830700002401853700002801877856013101905 2016 eng d00aSynthesis of Ni-doped ZnO nanostructures by low-temperature wet chemical method and their enhanced field emission properties0 aSynthesis of Nidoped ZnO nanostructures by lowtemperature wet ch cOCT a104318-1043240 v63 aIn this study, we report an enhancement in the field emission (FE) properties of ZnO nanostructures obtained by doping with Ni at a base pressure of similar to 1 x 10(-8) mbar, which were grown by a simple wet chemical process. The ZnO nanostructures exhibited a single-crystalline wurtzite structure up to a Ni doping level of 10%. FESEM showed a change in the morphology of the nanostructures from thick nanoneedles to nanoflakes via thin nanorods with an increase in the Ni doping level in ZnO. The turn-on field required to generate a field emission (FE) current density of 1 mu A cm(-2) was found to be 2.5, 2.3, 1.8 and 1.7 V mu mcm(-2) for ZnO (Ni0%), ZnO (Ni5%), ZnO (Ni7.5%) and ZnO (Ni10%), respectively. A maximum current density of similar to 872 mu A cm(-2) was achievable, which was generated at an applied field of 3.1 V mu m cm(-2) for a Ni doping level of 10% in ZnO. Long-term operational current stability was recorded at a preset value of 5 mA for a duration of 3 h and was found to be very high. The experimental results indicate that Ni-doped ZnO-based field emitters can open up many opportunities for their potential use as an electron source in flat panel displays, transmission electron microscopy, and the generation of X-rays. Thus, the simple low-temperature (similar to 80 degrees C) wet chemical synthesis approach and the robust nature of the ZnO nanostructure field emitter can provide prospects for the future development of cost-effective electron sources.1 aRana, Amit, Kumar1 aBankar, Prashant1 aKumar, Yogendra1 aMore, Mahendra, A.1 aLate, Dattatray, J.1 aShirage, Parasharam, M. uhttp://library.ncl.res.in/content/synthesis-ni-doped-zno-nanostructures-low-temperature-wet-chemical-method-and-their-enhanced01990nas a2200229 4500008004100000245014100041210007000182260000800252490000600260520113500266100001901401700002201420700002501442700002701467700001901494700001801513700002401531700002201555700002301577700002401600856013601624 2017 eng d00aSynthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties0 aSynthesis of orthorhombicmolybdenum trioxide αMoO3 thin films by cJUL0 v13 aIn present work, we report synthesis of orthorhombic-molybdenum trioxide (α-MoO 3) thin films using home-build hot wire-CVD (HW-CVD) method simply by heating the Mo filament in a controlled O 2 atmosphere. The formation of α-MoO 3 was confirmed by low angle-XRD and Raman spectroscopy. Low angle-XRD analysis revealed that α-MoO 3 crystallites have orientations along (110), (101) and (111) directions while Raman spectroscopy analysis shows two prominent vibrational modes ~819 and ~994 cm −1 associated with Mo 2–O and Mo=O respectively. SEM and TEM analysis show the formation of nano-sheets like morphology of α-MoO 3 thin films. The SAED pattern shows highly crystalline nature of α-MoO 3. The humidity-sensing properties were investigated at room temperature by fabricating the two probe device. The humidity sensing results showed n-type behavior of α-MoO 3. The maximum humidity sensitivity of ~6957% along with response time of ~66 s and recovery time of ~5 s were observed for α-MoO 3 thin film humidity sensor device. Our results have opened up a new avenue to grow α-MoO 3 for humidity sensor applications.1 aJadkar, Vijaya1 aPawbake, Amit, S.1 aWaykar, Ravindra, G.1 aJadhavar, Ashok, Arjun1 aMayabadi, Azam1 aDate, Abhijit1 aLate, Dattatray, J.1 aPathan, Habib, M.1 aGosavi, Suresh, W.1 aJadkar, Sandesh, R. uhttp://library.ncl.res.in/content/synthesis-orthorhombic-molybdenum-trioxide-%CE%B1-moo3-thin-films-hot-wire-cvd-and-investigations02931nas a2200241 4500008004100000022001400041245009600055210006900151260000800220300001000228490000800238520213400246653002002380653001502400653001502415653001902430100002502449700002202474700002302496700002402519700002202543856012402565 2019 eng d a0925-400500aSuperior humidity sensor and photodetector of mesoporous ZnO nanosheets at room temperature0 aSuperior humidity sensor and photodetector of mesoporous ZnO nan cAUG a83-920 v2933 a

Miniaturized sensor technology is vastly demanding multifunctional materials to fulfill many requirements simultaneously; instead of integrating various sensors into a single device. Efficient operation of these miniaturized sensors at room temperature is highly feasible and cost-effective. The humidity sensing and photodetection is precise merit of sensing in special usage like artificial skin. Sensitivity enhancement in both humidity and photodetection required the high surface area for adsorption as well as a high charge transfer mechanism. The two dimensional (2D) zinc oxide nanosheets (ZnO NS) is the ultimate structure for dimensionally confined transport properties owing to the specific surface atomic configuration that results in high sensitivity, low operating temperature, fast response and recovery, and improved selectivity. Furthermore, introducing porosity into 2D nanostructures has opened new opportunities to enhance the efficiency of sensors and detectors via increasing large surface area and tunable physical and chemical properties. Here we report preparation of mesoporous and highly crystalline 2D ZnO NS by a single step, template free, cost-effective chemical method. The structural and morphological characterizations of ZnO NS are carried out using XRD, FESEM, XPS, TEM respectively. The high-resolution TEM images emphasize sheet-like morphology with a thickness of around 18-22 nm. Further the mesoporous ZnO NS (MZNS) with the pore size between 5-10 nm are achieved by simple heat-treatment. XPS and PL study is confirming the oxygen deficiency in MZNS. The MZNS exhibits an excellent responsivity than PZNS with a fast response and rapid recovery time of 25 s and 5 s respectively along with good cyclic stability which is highly crucial for smart humidity sensor. Furthermore, it considerably enhances photo-sensor performance than pristine ZnO NS (PZNS) with (similar to)1 s response time as well as (similar to)1 s recovery time along with better stability. These promising results illustrate the great potential of MZNS for next-generation humidity sensors and photodetectors.

10ahumidity sensor10aMesoporous10ananosheets10aPhoto-detector1 aGupta, Shobhnath, P.1 aPawbake, Amit, S.1 aSathe, Bhaskar, R.1 aLate, Dattatray, J.1 aWalke, Pravin, S. uhttp://library.ncl.res.in/content/superior-humidity-sensor-and-photodetector-mesoporous-zno-nanosheets-room-temperature01820nas a2200217 4500008004100000022001400041245010900055210006900164260000900233300001600242490000700258520105400265100002701319700002601346700001901372700001901391700002101410700002401431700002601455856012101481 2019 eng d a1477-922600aSynthesis of a 3D free standing crystalline NiSex matrix for electrochemical energy storage applications0 aSynthesis of a 3D free standing crystalline NiSex matrix for ele cDEC  a16873-168810 v483 a

The electrochemical performance for energy storage of three-dimensional (3D) self-supported heterogeneous NiSex cubic-orthorhombic nanocrystals grown by a facile one-step chemical vapour deposition (CVD) approach on Ni foam substrates has been explored. NiSex shows a high specific capacitance of 1333 F g(-1) with ultra-high energy (105 W h kg(-1)) and power (54 kW kg(-1)) densities. Furthermore, by integrating the as-grown NiSex as the anode and reduced graphene oxide as the cathode, a hybrid super-capacitor (HSC) prototype with a coin cell configuration has been fabricated. The device shows better capacitance (40 F g(-1)) with high energy (22 W h kg(-1)) and power (5.8 kW kg(-1)) densities and robust cycling durability (similar to 88% capacitance retention after 10 000 repeated cycles). For practical reliability of the as-fabricated HSC, a red LED has been illuminated by connecting it with two charged coin cells. These outstanding performances of the HSC prove to be promising for applications in high energy storage systems.

1 aDinara, Syed, Mukulika1 aSamantara, Aneeya, K.1 aDas, Jiban, K.1 aBehera, J., N.1 aNayak, Saroj, K.1 aLate, Dattatray, J.1 aRout, Chandra, Sekhar uhttp://library.ncl.res.in/content/synthesis-3d-free-standing-crystalline-nisex-matrix-electrochemical-energy-storage02315nas a2200145 4500008004100000245007000041210006900111260001300180490000900193520180900202100001902011700002402030700001702054856009802071 2020 eng d00aSpectroscopic probe of atomically thin domains of CVD-grown MoSe20 aSpectroscopic probe of atomically thin domains of CVDgrown MoSe2 bAIPcNOV0 v22653 a
Since the discovery of graphene, two-dimensional Layered Transition Metal Dichalcogenides (TMDCs) such as MoS2, MoSe2, and WS2 having a tunable bandgap, have emerged as one of the most stable classes of materials making them attractive for various applications. We have investigated the growth mechanism and shape evolution of various domains of CVD-grown MoSe2 on insulating substrates by spectroscopic techniques. The different morphologies were analyzed using Raman and photoluminescence spectroscopies. The transformation from the precursor MoO3 to MoSe2 is found to depend on a number of growth parameters and experimental conditions.

 

 

1 aSingh, Vineeta1 aLate, Dattatray, J.1 aRath, Shyama uhttp://library.ncl.res.in/content/spectroscopic-probe-atomically-thin-domains-cvd-grown-mose202608nas a2200193 4500008004100000022001400041245010600055210006900161260000800230300001400238490000700252520191700259100002402176700002402200700002402224700002302248700002202271856012102293 2023 eng d a0022-246100aSize does matter: antibacterial activities and cytotoxic evaluation of polymorphic CuO nanostructures0 aSize does matter antibacterial activities and cytotoxic evaluati cFEB a2782-28000 v583 a

Nanostructured materials play a significant role in antibacterial activities. However, understanding the geometrical influence at the nanoscale in terms of size- and shape-correlated physical properties on antibacterial activities is very essential. Herein, we report the antibacterial influence of various copper oxide nanostructures (CuO NS) such as nanoparticles (NPs) (< 10 nm), nanospheres (NSs) (50-100 nm), and porous nanoflowers (NFs) (asymptotic to 350 nm). The XRD confirmed the crystalline nature of CuO NPs without impurities. The antibacterial activities of CuO NPs were investigated by the microplate dilution method and confocal laser scanning microscopic (CLSM) imaging. NPs having a diameter less than 10 nm exhibited significant damage to the bacterial cell membrane than NSs and NFs. Interestingly, NPs illustrated relatively low antibacterial activity against Gram-negative bacteria (Pseudomonas aeruginosa and Acinetobacter baumannii) than Gram-positive bacteria (Staphylococcus aureus and Staphylococcus epidermidis). Acinetobacter baumannii was found to be more susceptible to the NPs than other bacterial strains, attributed to its increased membrane permeability. The death phase was observed at a concentration of 15.6 mu g mL(-1) and 3.9 mu g mL(-1) for P. aeruginosa and A. baumannii, respectively, when treated with CuO NP after the 8 h of incubation. Similarly, for S. aureus and S. epidermidis, the death phase was observed at the concentration of 31.2 mu g mL(-1) and 250 mu g mL(-1), respectively. Furthermore, as the cell cytotoxicity measurements against human fibroblast L9239 cells revealed that CuO NPs were safe. The morphological and cell viability assay demonstrated 100% cell survival, when treated with NPs and NSs (5, 10, and 25 mu g mL(-1)), signifies no cytotoxicity. Therefore, CuO nanoparticles can be used for clinical and therapeutic applications.

1 aDesai, Dnyanada, G.1 aNavale, Govinda, R.1 aLate, Dattatray, J.1 aDharne, Mahesh, S.1 aWalke, Pravin, S. uhttp://library.ncl.res.in/content/size-does-matter-antibacterial-activities-and-cytotoxic-evaluation-polymorphic-cuo