01370nas a2200205 4500008004100000022001400041245006700055210006700122260012500189300002300314490000700337520058300344100002600927700002300953700002000976700002500996700002201021700003001043856009101073 2007 eng d a0003-695100aEnergy analysis of field emitted electrons from a ZnO tetrapod0 aEnergy analysis of field emitted electrons from a ZnO tetrapod aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScAPR aArticle No. 1621020 v903 a

The experimental total energy distribution (TED) of the field emitted electrons from a single pod of a ZnO tetrapod has been obtained, exhibiting a two-peak feature. The energy difference between the two peaks in the TED is found to be nearly equal to the band gap of the bulk ZnO. The results show that field emitted electrons originate from both the conduction and valence bands. The peak position dependence on the applied voltage has also been observed. In the present case, the size of the ZnO tetrapod is not small enough to reflect the quantum confinement effects.

1 aAl-Tabbakh, Ahmed, A.1 aMore, Mahendra, A.1 aJoag, Dilip, S.1 aRamgir, Niranjan, S.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K. uhttp://library.ncl.res.in/content/energy-analysis-field-emitted-electrons-zno-tetrapod01440nas a2200217 4500008004100000022001400041245006600055210006600121260012500187300001100312490000700323520062500330100002300955700002800978700002201006700003001028700002401058700002301082700002001105856009701125 2008 eng d a0003-695100aEnhanced field emission from hexagonal rhodium nanostructures0 aEnhanced field emission from hexagonal rhodium nanostructures aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUN a2531060 v923 a

Shape selective synthesis of nanostructured Rh hexagons has been demonstrated with the help of a modified chemical vapor deposition using rhodium acetate. An ultralow threshold field of 0.72 V/mu m is observed to generate a field emission current density of 4 x 10(-3) mu A/cm(2). The high enhancement factor (9325) indicates that the origin of electron emission is from nanostructured features. The smaller size of emitting area, excellent current density, and stability over a period of more than 3 h are promising characteristics for the development of electron sources. (C) 2008 American Institute of Physics.

1 aSathe, Bhaskar, R.1 aKakade, Bhalchandra, A.1 aMulla, Imtiaz, S.1 aPillai, Vijayamohanan, K.1 aLate, Dattatray, J.1 aMore, Mahendra, A.1 aJoag, Dilip, S. uhttp://library.ncl.res.in/content/enhanced-field-emission-hexagonal-rhodium-nanostructures-001455nas a2200217 4500008004100000245006000041210005900101260000800160300001400168490000600182520078800188100002300976700002400999700002201023700001801045700001601063700002001079700002301099700002401122856009101146 2013 eng d00aEnhanced field-emission behavior of layered MoS2 sheets0 aEnhanced fieldemission behavior of layered MoS2 sheets cAUG a2730-27340 v93 aField emission studies are reported for the first time on layered MoS2 sheets at the base pressure of approximate to 1 x 10(-8) mbar. The turn-on field required to draw a field emission current density of 10 A/cm(2) is found to be 3.5 V/m for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (approximate to 1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.1 aKashid, Ranjit, V.1 aLate, Dattatray, J.1 aChou, Stanley, S.1 aHuang, Yi-Kai1 aDe, Mrinmoy1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aDravid, Vinayak, P. uhttp://library.ncl.res.in/content/enhanced-field-emission-behavior-layered-mos2-sheets02122nas a2200241 4500008004100000022001400041245008600055210006900141260012500210300001100335490000800346520120400354100002601558700002601584700002301610700002001633700002301653700002201676700002301698700002101721700002401742856011401766 2014 eng d a0003-695100aEnhanced field emission properties of doped graphene nanosheets with layered SnS20 aEnhanced field emission properties of doped graphene nanosheets  aCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAbAMER INST PHYSICScJUL a0431090 v1053 a

We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 mu A/cm(2) is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/mu m) compared to pristine SnS2 (4.8 V/mu m) nanosheets. The field enhancement factor beta (similar to 3200 for the SnS2 and similar to 3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowering of the work function of SnS2 when supported by graphene, which is in response to p-type doping of graphene. (C) 2014 AIP Publishing LLC.

1 aRout, Chandra, Sekhar1 aJoshi, Padmashree, D.1 aKashid, Ranjit, V.1 aJoag, Dilip, S.1 aMore, Mahendra, A.1 aSimbeck, Adam, J.1 aWashington, Morris1 aNayak, Saroj, K.1 aLate, Dattatray, J. uhttp://library.ncl.res.in/content/enhanced-field-emission-properties-doped-graphene-nanosheets-layered-sns2-002178nas a2200193 4500008004100000245011300041210006900154260000800223300001400231490000700245520148200252100002401734700002101758700002301779700001601802700002001818700002201838856012401860 2018 eng d00aElectrochemically synthesized faceted CuInTe2 nanorods as an electron source for field emission applications0 aElectrochemically synthesized faceted CuInTe2 nanorods as an ele cAPR a5284-52940 v423 aHerein, CuInTe2 (CIT) thin films with faceted nanorod-like morphology have been synthesized on a flexible molybdenum foil using a water-based low-cost electrodeposition technique. The co-deposition potential for CIT was optimized using cyclic voltammetry with respect to that of the Ag/AgCl reference electrode, and films were deposited from -0.6 V to -0.9 V at the working temperature of 75 degrees C. The as-prepared CIT films exhibited an amorphous nature, whereas the RTP-annealed films exhibited a highly crystalline chalcopyrite nature as a function of the growth potential. A red shift was observed in the Raman spectra of the as-deposited films that shifted towards the original position upon annealing. The Cu/In ratio obtained by the EDS analysis was found to decrease systematically upon increasing the growth potential. X-ray photoelectron spectroscopy (XPS) studies revealed the presence of Cu+, Cu2+ satellites, In3+, Te2-, and Te4+ states of Cu, In, and Te. The field emission study showed a maximum current density of 1.74 mA cm(-2), which was attainable at an applied electric field of 1.5 V mu m(-1). The turn-on field was found to be 0.92 V mu m(-1), comparable to that of the carbon nanofibres. The emitter exhibited stable electron emission over a period of 3 hours. The faceted CIT nanorods with columnar growth are a potential candidate for application as an electron source, and herein, the field emission of CIT nanorods is reported for the first time.1 aLakhe, Manorama, G.1 aJoshi, Padmshree1 aChoudhary, Ram, J.1 aGanesan, V.1 aJoag, Dilip, S.1 aChaure, Nandu, B. uhttp://library.ncl.res.in/content/electrochemically-synthesized-faceted-cuinte2-nanorods-electron-source-field-emission