02649nas a2200253   4500008004100000022001400041245012100055210006900176260007100245300001400316490000600330520168600336653002202022653002102044653001802065653002402083653003602107100002802143700002502171700002202196700002502218700002302243856012902266       2014                        eng d  a1944-824400aVapor-liquid-solid growth of one-dimensional tin sulfide (sns) nanostructures with promising field emission behavior0 aVaporliquidsolid growth of onedimensional tin sulfide sns nanost  a1155 16TH ST, NW, WASHINGTON, DC 20036 USAbAMER CHEMICAL SOCcFEB  a2018-20250 v63 a<p>Single-crystalline ultralong tin sulfide (SnS) nanowires has been grown by a thermal evaporation technique under optimized conditions on gold-coated silicon substrates, and for the first time, field emission investigations on the SnS nanowires at the base pressure of 1 X 10(-8) mbar are reported. It has been revealed that the surface morphology of the as-synthesized SnS nanostructures is significantly influenced by the deposition temperature and duration. Structural and morphological analyses of as-synthesized SnS nanostructures have been carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). To understand the optical and electronic properties of as-synthesized SnS nanowires, ultraviolet-visible (UV-vis), photo-luminescence (PL), and X-ray photoelectron spectroscopy (XPS) studies were carried out. The SEM and TEM measurements reveal the formation of ultralong SnS nanowires, with an average diameter of 80 nm. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, the field emission characteristics of the SnS nanowires are found to be superior to the other metal chalcogenide nanostructures. The synthesized SnS nanowire emitter delivers a high current density of similar to 2.5 mA/cm(2) at an applied electric field of similar to 4.55 V/mu m. The emission current stability over a period of 6 h is observed to be good. The observed results demonstrate the potential of the SnS nanowire emitter as an electron source for practical applications in vacuum nano/microelectronic devices.</p>10aElectron emission10aID nanostructure10aSnS nanowires10athermal evaporation10avapor-liquid-solid (VLS) growth1 aSuryawanshi, Sachin, R.1 aWarule, Sambhaji, S.1 aPatil, Sandip, S.1 aPatil, Kashinath, R.1 aMore, Mahendra, A.  uhttp://library.ncl.res.in/content/vapor-liquid-solid-growth-one-dimensional-tin-sulfide-sns-nanostructures-promising-field-0