@article { ISI:000262796500004,
	title = {Characterization of MoSe2 thin film deposited at room temperature from solution phase},
	journal = {Journal of Crystal Growth},
	volume = {311},
	number = {1},
	year = {2008},
	month = {DEC},
	pages = {15-19},
	publisher = {ELSEVIER SCIENCE BV},
	type = {Article},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {<p>A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap {\textquoteleft}E-g{\textquoteright} for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.</p>},
	keywords = {Crystal morphology, Growth from solution, Inorganic compound, Polycrystalline deposition, Semiconducting materials, X-ray diffraction},
	issn = {0022-0248},
	doi = {10.1016/j.jcrysgro.2008.09.188},
	author = {Hankare, P. P. and Patil, A. A. and Chate, P. A. and Garadkar, K. M. and Sathe, D. J. and Manikshete, A. H. and Mulla, Imtiaz S.}
}
@article { ISI:000300466900006,
	title = {Understanding the growth of micro and nano-crystalline AlN by thermal plasma process},
	journal = {Journal of Crystal Growth},
	volume = {339},
	number = {1},
	year = {2012},
	month = {JAN},
	pages = {36-45},
	publisher = {ELSEVIER SCIENCE BV},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {<p>We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 mu m. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50\% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33\% and 67\%, respectively. (C) 2011 Elsevier B.V. All rights reserved.</p>},
	keywords = {Crystal morphology, Growth from high temperature solutions, Nitride, Semiconducting aluminum compound},
	issn = {0022-0248},
	doi = {10.1016/j.jcrysgro.2011.11.011},
	author = {Kanhe, Nilesh S. and Nawale, Ashok B. and Gawade, Rupesh L. and Puranik, Vedavati G. and Bhoraskar, S. V. and Das, Asoka K. and Mathe, Vikas L.}
}
