@article {42586, title = {Electrical bistability in a xanthene class molecule: conduction mechanisms}, journal = {Applied Physics Letters}, volume = {89}, year = {2006}, month = {OCT}, pages = {Article No: 142110}, abstract = {

The author study conduction mechanism in two conducting states of a bistable device at range. They find that in the electrical bistable devices, electrical switching is associated with a change in the conduction mechanism. Device current in the low-conducting state follows an injection-limited mechanism. The current in the high-conducting state conforms a bulk-dominated mechanism, namely, space-charge limited conduction with an exponential distribution of traps. The bistability has an associated memory phenomenon. The devices exhibit read-only and random-access memory applications for several hours.

}, doi = {10.1063/1.2358946}, author = {Rath, Arup Kumar and Sahu, Satyajit and Pal, Amlan J.} } @article {42585, title = {Conductance switching in an organic material: from bulk to monolayer}, journal = {Langmuir}, volume = {23}, year = {2007}, month = {SEP}, pages = {9831-9835}, type = {Article}, abstract = {

Fluorescein sodium, which does not exhibit electrical bistability in thin films, can be switched to a high conducting state by the introduction of carbon nanotubes as channels for carrier transport. Thin films based on fluorescein sodium/carbon nanotubes display memory switching phenomenon among a low conducting state and several high conducting states. Read-only and random-access memory applications between the states resulted in multilevel memory in these systems. Results in thin films and in a monolayer (deposited via layer-by-layer assembly) show that instead of different molecular conformers, multilevel conducting states arise from the different density of high conducting fluorescein molecules.

}, doi = {10.1021/la701132f}, author = {Rath, Arup Kumar and Pal, Amlan J.} } @article {42584, title = {Nanowires of metal-organic complex by photocrystallization: a system to achieve addressable electrically bistable devices and memory elements}, journal = {Langmuir}, volume = {24}, year = {2008}, month = {MAY}, pages = {5937{\textendash}5941}, abstract = {

A new method has been achieved to form a Cu:benzoquinone derivative (DDQ) charge-transfer complex by the photoexcitation of [Cu(DDQ)2(CH3COO)2] (1) that has been synthesized by the reaction of DDQ and hydrated cupric acetate in acetonitrile. Photoexcitation of coordinated complex 1 leads to the formation of charge-transfer complex Cu2+(DDQ{\textbullet}-)2 (2). The charge transfer complex 2, when spun on solid substrates, forms nanowires. Sandwich structures of 2 exhibit electrical bistability associated with memory phenomenon. Read-only and random-access memory phenomena are evidenced in nanowires of 2 providing a route to attend the issues pertaining to the addressibility of organic memory devices.

}, doi = {10.1021/la703871g}, author = {Rath, Arup Kumar and Dhara, Koushik and Banerjee, Pradyot and Pal, Amlan J.} } @article {42583, title = {Resistive switching in rose bengal and other xanthene molecules is a molecular phenomenon}, journal = {Organic Electronics}, volume = {9}, year = {2008}, month = {FEB}, pages = {495{\textendash}500}, abstract = {

There has been a debate on the mechanism of resistive switching in Rose Bengal and other Xanthene class molecules. While some authors proposed that the switching was due to an oxide layer at the Rose Bengal/Aluminum interface, some inferred the switching as an extrinsic effect like filament formation. We show results from Rose Bengal and other Xanthene class molecules on doped Si. Conductance switching in such monolayers induced by Pt/Ir tip of a scanning tunneling microscope (STM) in a non-contact mode shows that resistive switching in these molecules, initially reported by us in 2003 (in thin films), is indeed a molecular phenomenon.

}, doi = {10.1016/j.orgel.2008.02.013}, author = {Rath, Arup Kumar and Pal, Amlan J.} } @article {42582, title = {Hybrid core-shell nanoparticles: photoinduced electron-transfer for charge separation and solar cell application}, journal = {Chemistry of Materials}, volume = {21}, year = {2009}, month = {OCT}, pages = {5292{\textendash}5299}, abstract = {

We report growth and formation of hybrid core-shell nanoparticle systems, where photoinduced electron-transfer takes place from the II-VI semiconducting core to an organic shell. With the hybrid core-shell nanoparticles, we fabricate devices so that the photoinduced electron-transfer can finally yield photocurrent and result photovoltaic solar cells. Formation of an organic shell-layer on CdSe nanoparticles is supported by electronic absorption spectroscopy. Electron-transfer from the nanoparticle in the core to a number of organic molecules in the shell is established from quenching of photoluminescence intensity of CdSe nanoparticles as well as from a change in the lifetime of photoluminescence emission. Devices based on the hybrid core-shell nanoparticles in a suitable hole-transporting layer with two dissimilar metal electrodes show efficient photovoltaic performance. Here, following the electron-transfer, electrons flow through the organic molecules and holes, left in the nanoparticles, move through the hole-transporting polymer to the opposite electrodes to yield photovoltaic short-circuit current. The role of CdSe nanoparticles in light-harvesting and charge-generation has been substantiated by control experiments with ZnS nanoparticles in the core. In ZnS-based hybrid core-shell systems, photovoltaic performance is low since photoinduced electron-transfer does not occur from ZnS to the dye.

}, doi = {10.1021/cm902404s}, author = {Guchhait, Asim and Rath, Arup Kumar and Pal, Amlan J.} } @article {42581, title = {Induce negative differential resistance in organic devices through a ferroelectric polymer}, journal = {Organic Electronics}, volume = {10}, year = {2009}, month = {JUN}, pages = {1116{\textendash}1119}, abstract = {

We report how ferroelectric materials induce negative differential resistance (NDR) in organic devices. Fluorescein, which exhibits semiconducting current{\textendash}voltage characteristics, shows NDR effect in a ferroelectric matrix. Here, we vary the concentration of fluorescein in the ferroelectric matrix to study its effect on NDR. We also show how the degree of polarization controls NDR. We infer that under a suitable bias, the ferroelectric polymer becomes polarized to facilitate electron-injection in the device followed by a double-reduction of fluorescein molecules. From the capacitance{\textendash}voltage measurements, we substantiate the role of polarization in inducing NDR effect in organic molecules.

}, doi = {10.1016/j.orgel.2009.05.027}, author = {Rath, Arup Kumar and Pal, Amlan J.} } @article {42580, title = {Organic memory and electrical bistability in a quinone {\textendash}based charge transfer complex}, journal = {Proceedings of the IEEE}, volume = {97}, year = {2009}, month = {AUG}, abstract = {

We present an overview of the issues of organic memory devices and discuss the mechanisms involved in conductance switching. To make the memory elements addressable, we introduce nanostructures of a quinone-based charge-transfer complex. The devices based on charge-transfer complexes exhibit electrical bistability. Apart from characterizing complex formation, we study characteristics of memory devices based on the complexes. The mechanism of bistability has been discussed in terms of electroreduction of the quinone derivative with the formation of a percolating network of conducting molecules or channels across the device. Depending on the device architecture, a device may exhibit memoryswitching or threshold-switching phenomenon. The former system has displayed read-only and random-access memory applications.

}, doi = {10.1109/JPROC.2009.2021962}, author = {Rath, Arup Kumar and Pal, Amlan J.} } @article {42579, title = {Mn-doped nanocrystals in light-emitting diodes: energy-transfer to obtain electroluminescence from quantum dots}, journal = {Applied Physics Letters}, volume = {97}, year = {2010}, month = {SEP}, pages = {Article number: 113502}, abstract = {

We fabricatelight-emitting diodes(LEDs) based on Mn-doped ZnSnanocrystals along with hole-transporting bis(3-methylphenyl)--diphenyl-benzidine (TPD). With Mn-doping, ZnSnanostructures exhibit a strong photoluminescence. The LEDs exhibit electroluminescence(EL) from Mn-doped ZnSquantum dots and TPD. In order to open up channels for energy-transfer from TPD to quantum dots and to achieve EL from only the nanoparticles, we grow core-shell nanoparticles with Mn-doped ZnS in the core and CdS as the shell layer. Excitons formed in TPD can now transfer their energy directly to the shell-layer to yield EL from only the nanoparticles.

}, doi = {10.1063/1.3489099}, author = {Rath, Arup Kumar and Bhaumik, Saikat and Pal, Amlan J.} } @article {42578, title = {Near-IR activity of hybrid solar cells: enhancement of efficiency by dissociating excitons generated in PbS nanoparticles}, journal = {Applied Physics Letters}, volume = {96}, year = {2010}, month = {FEB}, pages = {Article no: 073505}, abstract = {

Photovoltaic devices based on PbSnanoparticles remained inactive in the near-IR region due to a not-so-favorable energy band-diagram that does not allow dissociation of excitons generated in PbS. In this work, with the introduction of nanostructures in the PbS-based hybrid system, we show an enhancement of photovoltaic performance in both visible and near-IR regions. The addition of increases the power conversion efficiency from 0.006\% to 0.12\%. With the aid of energy band-diagram, we show that excitons generated in PbS even in the near-IR range can now become dissociated to yield photocurrent in the external circuit.

}, doi = {10.1063/1.3292183}, author = {Guchhait, Asim and Rath, Arup Kumar and Pal, Amlan J.} } @article {42576, title = {Solution-processed heterojunction solar cells based on p-type PbS quantum dots and n-type Bi2S3 nanocrystals}, journal = {Advanced Materials}, volume = {23}, year = {2011}, month = {AUG}, pages = {3712{\textendash}3717}, abstract = {

Bi2S3 nanocrystals are employed as an n-type, non-toxic, inorganic, solution-processed semiconductor in thin film solar cells. The first solution processed-inorganic p-n junction based on p-type PbS QDs and n-type Bi2S3 nanocrystals with both phases contributing to photocarrier generation is demonstrated. The reported devices show a power conversion efficiency of 1.6\% for 860 nm PbS QDs and over 1\% for 1300 nm PbS QDs.

}, doi = {10.1002/adma.201101399}, author = {Rath, Arup Kumar and Bernechea, Maria and Martinez, Luis and Konstantatos, Gerasimos} } @article {42577, title = {To make polymer: quantum dot hybrid solar cells NIR-active by increasing diameter of PbS nanoparticles}, journal = {Solar Energy Materials and Solar Cells}, volume = {95}, year = {2011}, month = {OCT}, pages = {651{\textendash}656}, abstract = {

We fabricate NIR-active solar cells based on PbS quantum dots and a conventional conjugated polymer. These devices act as solar cells under exclusively NIR wavelengths above 650 nm. Here PbS nanoparticles absorb photons in the NIR range that in turn generate excitons. We show that with an assistance from a strong electron-acceptor (TiO2), these excitons can be dissociated to electrons and holes to yield a photocurrent in the external circuit. We then aim to extend the spectral window of the solar cells to higher wavelength region by increasing the diameter of PbS nanoparticles to make the cells further NIR-active. We observe that the short-circuit current (JSC) shows a peak when the diameter of PbS nanoparticles increases. Here, the spectral window can be extended till conduction band-edge of PbS quantum dots falls below that of TiO2 nanostructures cutting off the electron-transfer pathway. The NIR-active photovoltaic solar cells yield a short-circuit current (JSC) of 1.0 mA/cm2, open-circuit voltage (VOC) of 0.42 V, and power conversion efficiency (η) of 0.16\% and remain operative till 1200 nm.

}, doi = {10.1016/j.solmat.2010.09.034}, author = {Guchhait, Asim and Rath, Arup Kumar and Pal, Amlan J.} } @article {42575, title = {Solution-processed inorganic bulk nano-heterojunctions and their application to solar cells}, journal = {Nature Photonics}, volume = {6}, year = {2012}, month = {JUL}, pages = {529{\textendash}534}, abstract = {

In the last decade, solution-processed quantum dot/nanocrystal solar cells have emerged as a very promising technology for third-generation thin-film photovoltaics because of their low cost and high energy-harnessing potential. Quantum dot solar cell architectures developed to date have relied on the use of bulk-like thin films of colloidal quantum dots. Here, we introduce the bulk nano-heterojunction concept for inorganic solution-processed semiconductors. This platform can be readily implemented by mixing different semiconductor nanocrystals in solution and allows for the development of optoelectronic nanocomposite materials with tailored optoelectronic properties. We present bulk nano-heterojunction solar cells based on n-type Bi2S3 nanocrystals and p-type PbS quantum dots, which demonstrate a more than a threefold improvement in device performance compared to their bilayer analogue, as a result of suppressed recombination.

}, doi = {10.1038/nphoton.2012.139}, author = {Rath, Arup Kumar and Bernechea, Maria and Martinez, Luis and Pelayo Garcia de Arquer, F. and Osmond, Johann and Konstantatos, Gerasimos} } @article {42573, title = {Heterovalent cation substitutional doping for quantum dot homojunctions}, journal = {Nature Communications}, volume = {4}, year = {2013}, month = {DEC}, pages = {Article number: 2981}, abstract = {

Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7\%.

}, doi = {10.1038/ncomms3981}, author = {Stavrinadis, Alexandros and Rath, Arup Kumar and Pelayo Garcia de Arquer, F. and Diedenhofen, Silke L. and Magen, Cesar and Martinez, Luis and So, David and Konstantatos, Gerasimos} } @article {42574, title = {Imprinted electrodes for enhanced light trapping in solution processed solar cells}, journal = {Advanced Materials}, volume = {26}, year = {2013}, month = {OCT}, pages = {443{\textendash}448}, doi = {10.1002/adma.201303674}, author = {Mihi, Agustin and Beck, Fiona J. and Lasanta, Tania and Rath, Arup Kumar and Konstantatos, Gerasimos} } @article { ISI:000331803800085, title = {Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy}, journal = {Applied Physics Letters}, volume = {104}, number = {6}, year = {2014}, month = {FEB}, pages = {063504}, publisher = {AMER INST PHYSICS}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, abstract = {

Impedance Spectroscopy (IS) proves to be a powerful tool for the determination of carrier lifetime and majority carrier mobility in colloidal quantum dot films. We employ IS to determine the carrier lifetime in PbS quantum dot Schottky solar cells with Al and we verify the validity of the technique via transient photovoltage. We also present a simple approach based on an RC model that allows the determination of carrier mobility in PbS quantum dot films and we corroborate the results via comparison with space charge limited measurements. In summary, we demonstrate the potential of IS to characterize key-to-photovoltaics optoelectronic properties, carrier lifetime, and mobility, in a facile way. (C) 2014 AIP Publishing LLC.

}, issn = {0003-6951}, doi = {10.1063/1.4865089}, author = {Rath, Arup Kumar and Lasanta, Tania and Bernechea, Maria and Diedenhofen, Silke L. and Konstantatos, Gerasimos} } @article { ISI:000339661100021, title = {Remote trap passivation in colloidal quantum dot bulk nano-heterojunctions and its effect in solution-processed solar cells}, journal = {Advanced Materials}, volume = {26}, number = {27}, year = {2014}, month = {JUL}, pages = {4741+}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

More-efficient charge collection and suppressed trap recombination in colloidal quantum dot (CQD) solar cells is achieved by means of a bulk nano-heterojunction (BNH) structure, in which p-type and n-type materials are blended on the nanometer scale. The improved performance of the BNH devices, compared with that of bilayer devices, is displayed in higher photocurrents and higher open-circuit voltages (resulting from a trap passivation mechanism).

}, issn = {0935-9648}, doi = {10.1002/adma.201400297}, author = {Rath, Arup Kumar and Pelayo Garcia de Arquer, F. and Stavrinadis, Alexandros and Lasanta, Tania and Bernechea, Maria and Diedenhofen, Silke L. and Konstantatos, Gerasimos} } @article {44346, title = { Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar}, journal = {Journal of Colloid and Interface Science}, volume = {522}, year = {2018}, month = {JUL}, pages = {120-125}, type = {Article}, abstract = {The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18\% in the power conversion efficiency with the highest recorded efficiency of 8.98\%. (C) 2018 Elsevier Inc. All rights reserved.}, doi = {10.1016/j.jcis.2018.03.047}, author = {Tulsani, Srikanth Reddy and Rath, Arup Kumar} } @article {48206, title = {CdSe quantum dot-based nanocomposites for ultralow-power memristors}, journal = {ACS Applied Nano Materials}, volume = {5}, year = {2022}, month = {JUN}, pages = {8502-8510}, type = {Article}, abstract = {

The explosion in digital communication with the huge amount of data and the internet of things (IoT) led to the increasing demand for data storage technology with faster operation speed, high-density stacking, nonvolatility, and low power consumption for saving energy. Metal chalcogenide-based quantum dots (QDs) show excellent nonvolatile resistive memory behavior owing to their tunable electronic states and control in trap states by passivating the surface with different ligands. Here, we synthesized high-quality colloidal monodispersed CdSe QDs by the hot injection method. The CdSe QDs were blended with an organic polymer, poly(4-vinylpyridine) (PVP), to fabricate an Al\textbackslashCdSe-PVP\textbackslashAl device. Our device shows excellent bipolar nonvolatile resistive random access memory (RRAM) switching behavior with a high current ON/OFF ratio (I-ON/OFF) of 6.1 x 10(4), and it consumes ultralow power. The charge trapping and detrapping in the potential well formed by the CdSe QD and PVP combination result in resistive switching. This CdSe-PVP-based resistive random access memory (RRAM) device with a high I-ON/OFF, ultrafast switching speed, high endurance, low operating voltage, and long retention period can be used as a high-performance and ultralow-power memristive device.

}, keywords = {memory switching, memristor, metal chalcogenides, nonvolatile, quantum dots}, doi = {10.1021/acsanm.2c01894}, author = {Bera, Jayanta and Betal, Atanu and Sharma, Ashish and Shankar, Uday and Rath, Arup Kumar and Sahu, Satyajit} } @article {48166, title = {Colloidal MoS2 quantum dots for high-performance low power resistive memory devices with excellent temperature stability}, journal = {Applied Physics Letters}, volume = {120}, year = {2022}, month = {JUN}, pages = {253502}, type = {Article}, abstract = {

Conventional memory technologies are facing enormous problems with downscaling, and are hence unable to fulfill the requirement of big data storage generated by a huge explosion of digital information. A resistive random access memory device (RRAM) is one of the most emerging technologies for next-generation computing data storage owing to its high-density stacking, ultrafast switching speed, high non-volatility, multilevel data storage, low power consumption, and simple device structure. In this work, colloidal MoS2 quantum dots (QDs) embedded in an insulating matrix of poly-(4vinylpyridine) (PVP) were used as an active layer to fabricate a RRAM device. The MoS2 QDs-PVP based RRAM device reveals an excellent nonvolatile resistive switching (RS) behavior with a maximum current on-off ratio (I-ON/I-OFF) of 10(5). High endurance, long retention time, and successive {\textquoteleft}{\textquoteleft}write-read-erase-read{\textquoteright}{\textquoteright} cycles indicate high-performance RRAM characteristics. The ultimate power consumption by this RRAM device is considerably low for energy saving. In addition, the MoS2 QDs-PVP based device shows RS behavior even at 130 degrees C. High I-ON/I-OFF, low operating power, high endurance, long retention time, and excellent stability with temperatures reveal that the MoS2 QDs-PVP based device can be a promising candidate for high-performance low power RRAM devices that can be operated at relatively higher temperatures. Published under an exclusive license by AIP Publishing.

}, issn = {0003-6951}, doi = {10.1063/5.0094892}, author = {Bera, Jayanta and Betal, Atanu and Sharma, Ashish and Rath, Arup Kumar and Sahu, Satyajit} } @article {49405, title = {Lead-free low-dimensional tetraalkylammonium manganese- and copper-based hybrid organic{\textendash}inorganic perovskites for visual fluorometric Pb2+ ion detection}, journal = {ACS Applied Optical Materials}, volume = {2}, year = {2024}, month = {JUL}, pages = {1533{\textendash}1545}, type = {Article}, abstract = {

For the first time, we have synthesized lead (Pb)-free manganese (Mn)- and copper (Cu)-based hybrid organic{\textendash}inorganic perovskite (HOIP) compounds, compound\ 1, (TEA)2MnBr4, compound\ 2, (TBA)2MnBr4, compound\ 3, (TEA)2CuBr4, and compound\ 4, (TBA)CuBr2\ (where TEA is tetraethylammonium and TBA is tetrabutylammonium), under ambient conditions via mechanochemical synthesis methodology using a Kakuhunter-made planetary mixer. The compounds are characterized as 2D except for (TBA)CuBr2, which has crystallized in the 0D lattice. The synthesized compounds are phase pure and show a stable solid-state emission at room temperature. The Mn-based perovskite compound\ 1\ showed excellent environmental photostability for over a month and reasonable stability under a relative humidity of 70{\textendash}80\%. The nanoparticle (NP) dispersions of compounds\ 1\ and\ 2\ were used further for fluorescence titration studies using various heavy metal cations, including transition metals and lanthanides (e.g., Y3+, Nb3+, Co2+, Ni2+, Ag+, Zn2+, Cd2+, Pb2+, Gd3+, and Dy3+), where they showed good fluorescence switching by the Pb2+\ ion. Compound\ 1\ demonstrated excellent fluorescence switching performance with Pb2+\ titration with a Pb2+\ detection limit of 2.43 {\texttimes} 10{\textendash}8\ M and hence can be used to fabricate a Pb2+\ calorimetric sensor. A preliminary visual thin film-based sensor using NPs of compound\ 1\ was fabricated to test the change in emission from blue to green in correlation with the results obtained in the NP solution during Pb2+\ ion sensing. A fascinating in situ ion-exchange-based mechanism for the sensitivity of NPs of compound\ 1\ is confirmed. This study reveals the ability of Pb-free Mn-based HOIPs to detect an oxidizing metal cation, Pb2+, efficiently and quantitatively.

}, doi = {10.1021/acsaom.4c00182}, url = {https://pubs.acs.org/doi/10.1021/acsaom.4c00182}, author = {Kour, Prachi and Sahu, Pragati and Dambhare, Neha V. and Rath, Arup Kumar and Mukherjee, Shatabdi Porel} } @article {49336, title = {Magnetic chemiresistive Fe-doped In2O3 nanocubes to Tunably detect NO2 at ppm to ppb concentrations}, journal = {ACS APPLIED NANO MATERIALS}, volume = {7}, year = {2024}, month = {JUN }, pages = {14331-14343}, type = {Journal Article}, keywords = {GAS-SENSING PROPERTIES, METAL-OXIDE NANOSTRUCTURES}, doi = {10.1021/acsanm.4c01795}, author = {Rudra, Pratyasha and Dambhare, Neha V. and Srihari, Velaga and Das, Sagnik and Rath, Arup Kumar and Saha, Debdulal and Mondal, Swastik} } @article {49195, title = {Transient Electro-Graphitization of MOFs Affecting the Crystallization of Ruthenium Nanoclusters for Highly Efficient Hydrogen Evolution}, journal = {ADVANCED FUNCTIONAL MATERIALS}, volume = {34}, year = {2024}, month = {AUG}, type = {Journal Article}, keywords = {amorphous ruthenium, crystallization control, graphitic nanostructure}, issn = {1616-301X}, doi = {10.1002/adfm.202315460}, author = {Karim, Golam Masud and Patra, Amalika and Deb, Sujit Kumar and Upadhya, Hemanta and Das, Snehasish and Mukherjee, Priyam and Ahmad, Waleed and Barman, Narad and Thapa, Ranjit and Dambhare, V, Neha and Rath, Arup Kumar and Das, Jaysri and Manna, Uttam and Urkude, Rajashri R. and Oh, Youngtak and Maiti, Uday Narayan} }