@article { ISI:000296306600025,
	title = {Strong electric field modulation of transport in PVDF/MWCNT nanocomposite near the percolation threshold},
	journal = {Solid State Communications},
	volume = {151},
	number = {21},
	year = {2011},
	month = {NOV},
	pages = {1612-1615},
	publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
	type = {Article},
	address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
	abstract = {<p>A nanocomposite comprising of multiwalled carbon nanotubes (MWCNT) embedded in ferroelectric Poly(vinylidene fluoride) PVDF polymer matrix is examined for electric field induced transport modulation. The pulsed laser deposition (PLD) grown thin films of the nanocomposite with different MWCNT content were characterized. When used as a channel layer in a field effect transistor configuration, a strong electric field modulation of the transport was realized just below the percolation threshold. We believe that this nanocomposite non-percolating channel concept can provide several opportunities for FET devices for organic electronics. (C) 2011 Elsevier Ltd. All rights reserved.</p>},
	keywords = {Field effect device, pulsed laser deposition, PVDF, Scanning tunneling microscopy},
	issn = {0038-1098},
	doi = {10.1016/j.ssc.2011.07.018},
	author = {Chanmal, Chetan and Deo, Meenal S. and Rana, Abhimanyu and Jog, Jyoti Prakash and Ogale, Satishchandra B.}
}
@article { ISI:000296659000032,
	title = {Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction},
	journal = {Nanoscale},
	volume = {3},
	number = {11},
	year = {2011},
	month = {OCT},
	pages = {4706-4712},
	publisher = {ROYAL SOC CHEMISTRY},
	type = {Article},
	address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
	abstract = {<p>Cu2O nanoneedles are synthesized on a copper substrate by a simple anodization and reducing ambient annealing protocol. ZnO nanorods are grown on ITO coated glass by a low temperature chemical route. The electronic and photo-response properties of the p-Cu2O/n-ZnO flip-chip heterojunction are then studied and analyzed. We show that the I-V characteristic is rectifying and the junction exhibits a good photoresponse (similar to 120\% under 1 V reverse bias) under AM 1.5 (1 Sun) illumination. This nano-heterojunction photo-response is far stronger as compared to that of a pulsed laser deposited thin film p-Cu2O/n-ZnO heterojunction, which can be attributed to higher junction area in the former case.</p>},
	issn = {2040-3364},
	doi = {10.1039/c1nr10665a},
	author = {Deo, Meenal S. and Mujawar, Sarfraj and Game, Onkar S. and Yengantiwar, Ashish and Banpurkar, Arun G. and Kulkarni, Sneha and Jog, Jyoti Prakash and Ogale, Satishchandra B.}
}
