@article { ISI:000235860500014,
	title = {Electron beam induced surface cross-linking of functional monomers coated on silicon substrate},
	journal = {Materials Letters},
	volume = {60},
	number = {11},
	year = {2006},
	month = {MAY},
	pages = {1360-1365},
	publisher = {ELSEVIER SCIENCE BV},
	type = {Article},
	address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
	abstract = {<p>A 3: 1 composition of functional monomer: multifunctional acrylate was spin coated and later cross-linked under the influence of keV electron irradiation on the surface of silicon to generate a surface-anchored cross-linked network bearing functional moieties. Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) as well as wetting angle measurements were used for the analysis of functional monomer cross-linked surfaces. Results of the surface reconstruction of surfaces and electron irradiated on coated silicon wafers reveal that long-term hydrophilic surfaces can be achieved. Thus, the surface architecture can be favorably manipulated by using this remarkable technique with a Suitable combination of functional monomers and cross-linkers. (c) 2005 Elsevier B.V. All rights reserved.</p>},
	keywords = {electron beam irradiation, FTIR, Polymers, surface modification, XPS},
	issn = {0167-577X},
	doi = {10.1016/j.matlet.2005.11.029},
	author = {Mahapatra, S. K. and Bodas, Dhananjay S. and Mandale, A. B. and Gangal, S. A. and Bhoraskar, Vasant N.}
}
@article { ISI:000286305100010,
	title = {Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure},
	journal = {Thin Solid Films},
	volume = {519},
	number = {5, SI},
	year = {2010},
	note = {37th International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, APR 26-30, 2010},
	month = {DEC},
	pages = {1530-1535},
	publisher = {Amer Vacuum Soc, Adv Surface Engn Div},
	address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
	abstract = {<p>MOS structure of Al/Al2O3/n-Si, Al/TiO2/n-Si and Al/Al2O3/TiO2/n-Si was obtained by deposition of Al2O3 and TiO2 on silicon substrate by RF Magnetron Sputtering system. The total thickness of the oxide layer similar to 40 +/- 5 nm in the MOS structure was kept constant. Samples were characterized by X-Ray diffraction (XRD). X-Ray photoelectron spectroscopy (XPS), Impedance analyzer and Current-voltage (J-V) characteristics. The variations in the dielectric constant and tan 8 of the MOS capacitor in the frequency range of 1000Hz-1MHz were measured by impedance analyzer. The variation in dielectric constant of the Al/Al2O3/TiO2/n-Si multilayer compared to single layer of Al/Al2O3/n-Si and Al/TiO2/n-Si is due to high probability of defects, lattice mismatch and interface interactions. The steep rise of Tan 6 values in the Al/Al2O3/TiO2/n-Si structure is due to the resonance effect of both Al2O3 and TiO2 layers. The leakage current mechanisms of MOS structures were extracted from Schottky coefficient and Poole-Frenkel coefficient. Theoretical values of Schottky coefficients (beta(SC)) and Poole-Frenkel coefficients (beta(PF)) for each sample were estimated using the real part of the dielectric constant. The experimental values were calculated from J-V characteristics and compared with theoretical values. The appropriate model has been proposed. It was found that Schottky and Poole-Frenkel mechanisms are applicable at low and high field respectively for all MOS structures. The combination of Al/Al2O3/TiO2/n-Si is found to be a promising structure with high dielectric constant and low leakage current suitable for MOS devices. (C) 2010 Elsevier B.V. All rights reserved.</p>},
	keywords = {Al2O3, dielectric constant, Leakage current, MOS device, Poole-Frenkel emission, Schottky emission, TiO2},
	issn = {0040-6090},
	doi = {10.1016/j.tsf.2010.08.089},
	author = {Laha, Pinaki and Panda, A. B. and Dahiwale, S. and Date, Kalyani S. and Patil, K. R. and Barhai, P. K. and Das, A. K. and Banerjee, Indrani and Mahapatra, S. K.}
}
