@conference { ISI:000352795700066,
	title = {Enhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience},
	booktitle = {2014 27th International Vacuum Nanoelectronics Conference (IVNC) },
	series = {International Vacuum Nanoelectronics Conference},
	year = {2014},
	note = {27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014},
	month = {JUL},
	publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA},
	organization = {IEEE, 345 E 47th ST, New York, NY 10017 USA},
	address = {Engelberg, Switzerland},
	abstract = {<p>Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.</p>},
	keywords = {graphene, Pressure Dependent Field Emission},
	isbn = {978-1-4799-5306-6},
	issn = {2164-2370},
	doi = {10.1109/IVNC.2014.6894791},
	author = {Suryawanshi, S. R. and Kolhe, Pankaj S. and Gavhane, D. S. and Patil, S. S. and Chavan, P. G. and More, Mahendra A. and Late, Dattatray J.},
	editor = {Tsujino, S. and Gobrecht, J. and Paraliev, M. and Braun, H. H. and Groening, O. and Feurer, T.}
}
@article {44488,
	title = {Temperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets},
	journal = {Diamond and Related Materials},
	volume = {84},
	year = {2018},
	month = {APR },
	pages = {146-156},
	type = {Journal Article},
	abstract = {<p>Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G' bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.</p>},
	keywords = {graphene, high pressure, Phonon, Plasma treated graphene, Raman spectroscopy},
	issn = {9259635},
	doi = {10.1016/j.diamond.2018.03.021},
	author = {Pawbake, Amit S. and Mishra, K. K. and Machuno, Luis G. B. and Gelamo, Rogerio V. and Ravindranathan, T. R. and Rout, Chandra Sekhar and Late, Dattatray J.}
}
