@article { ISI:000238250300028, title = {Field emission studies of novel ZnO nanostructures in high and low field regions}, journal = {Nanotechnology}, volume = {17}, number = {11}, year = {2006}, month = {JUN}, pages = {2730-2735}, publisher = {IOP PUBLISHING LTD}, address = {DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND}, abstract = {

A study of the field emission characteristics of novel structures of ZnO, namely marigolds, multipods and microbelts, has been carried out in both the close proximity configuration and the conventional field emission microscope. The use of a conventional field emission microscope overcomes the drawback of arc formation at high field values. The nonlinearity in the Fowler - Nordheim ( F - N) plot, a characteristic feature of semiconductors has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability exhibited by these structures is also promising for future device applications.

}, issn = {0957-4484}, doi = {10.1088/0957-4484/17/11/003}, author = {Ramgir, Niranjan S. and Late, Dattatray J. and Bhise, Ashok B. and Mulla, Imtiaz S. and More, Mahendra A. and Joag, Dilip S. and Pillai, Vijayamohanan K.} } @article { ISI:000240496500030, title = {ZnO multipods, submicron wires, and spherical structures and their unique field emission behavior}, journal = {Journal of Physical Chemistry B}, volume = {110}, number = {37}, year = {2006}, month = {SEP}, pages = {18236-18242}, publisher = {AMER CHEMICAL SOC}, type = {Article}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

A simple method of vapor deposition for the shape selective synthesis of ZnO structures, namely, multipods, submicron wires, and spheres, has been successfully demonstrated. A plausible growth mechanism based on the studies of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) is proposed. Our studies suggest that the growth of a multipod structure is governed by the screw dislocation propagation while the vapor-liquid-solid (VLS) mechanism is responsible for the formation of submicron wires and spheres. Moreover, the flow rate of the carrier gas plays a crucial role in governing the morphology. Further, these structures exhibit an enhanced field emission behavior. The nonlinearity in the Fowler-Nordheim (F-N) plot, a characteristic feature of electron emission from semiconductors, is explained by considering the contributions from both the conduction and the valence bands of ZnO.

}, issn = {1520-6106}, doi = {10.1021/jp0628131}, author = {Ramgir, Niranjan S. and Late, Dattatray J. and Bhise, Ashok B. and More, Mahendra A. and Mulla, Imtiaz S. and Joag, Dilip S. and Vijayamohanan, K.} } @article { ISI:000249834900020, title = {Field emission investigations of RuO2-doped SnO2 wires}, journal = {Applied Surface Science}, volume = {253}, number = {23}, year = {2007}, month = {SEP}, pages = {9159-9163}, publisher = {ELSEVIER SCIENCE BV}, type = {Article}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 x 10(4) A/cm(2) is drawn from the single wire emitter at an applied field of 8.46 x 10(4) V/mu m. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 LA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. (c) 2007 Elsevier B.V. All rights reserved.

}, keywords = {doped semiconductor, field emission, field enhancement factor, RuO2, SnO2}, issn = {0169-4332}, doi = {10.1016/j.apsusc.2007.05.058}, author = {Bhise, Ashok B. and Late, Dattatray J. and Ramgir, Niranjan S. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.} } @article { ISI:000257231200057, title = {Enhanced field emission from hexagonal rhodium nanostructures}, journal = {Applied Physics Letters}, volume = {92}, number = {25}, year = {2008}, month = {JUN}, pages = {253106}, publisher = {AMER INST PHYSICS}, type = {Article}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, abstract = {

Shape selective synthesis of nanostructured Rh hexagons has been demonstrated with the help of a modified chemical vapor deposition using rhodium acetate. An ultralow threshold field of 0.72 V/mu m is observed to generate a field emission current density of 4 x 10(-3) mu A/cm(2). The high enhancement factor (9325) indicates that the origin of electron emission is from nanostructured features. The smaller size of emitting area, excellent current density, and stability over a period of more than 3 h are promising characteristics for the development of electron sources. (C) 2008 American Institute of Physics.

}, issn = {0003-6951}, doi = {10.1063/1.2943657}, author = {Sathe, Bhaskar R. and Kakade, Bhalchandra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Late, Dattatray J. and More, Mahendra A. and Joag, Dilip S.} } @article { ISI:000258037300073, title = {RuO(2) doped SnO(2) nanobipyramids on Si (100) as a field emitter}, journal = {Thin Solid Films}, volume = {516}, number = {18}, year = {2008}, month = {JUL}, pages = {6388-6391}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

Thin films of RuO(2): SnO(2) nanobipyramids have been grown on silicon (100) flat substrates, and their field emission behavior has been investigated. The field emission experiments have been performed in parallel plate configuration. In this experiment, the onset field for 0. 1 gA/ cm 2 current density has been found to be 0.2 V/mu m. The Fowler-Nordheim plot shows non-linear nature typical that of a semiconductor. The field enhancement factor has been estimated to be 35,600 cm(-1), indicating that the field emission originates from the nanometric features of the emitter. The current stability recorded at a preset value of I tA is observed to be good. Our field emission results on RuO(2): SnO(2) nanobipyramids indicate that, RuO(2): SnO(2) nanobipyramids are a potential candidate for futuristic field emission based devices. (c) 2008 Elsevier B.V. All rights reserved.

}, keywords = {doped semiconductor, field emitter, field enhancement factor, ruthenium oxide, tin oxide}, issn = {0040-6090}, doi = {10.1016/j.tsf.2007.12.160}, author = {Bhise, Ashok B. and Late, Dattatray J. and Ramgir, Niranjan S. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.} } @article { ISI:000267498700010, title = {Field emission investigation of single Fe-doped SnO2 wire}, journal = {Solid State Sciences}, volume = {11}, number = {6}, year = {2009}, month = {JUN}, pages = {1114-1117}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Tin oxide submicronwires doped with Fe element were prepared by the thermal evaporation method. Morphological and structural characterizations revealed wires with sub micron size and crystalline in nature. The field electron emission from the single Fe:SnO2 wire was carried out in conventional field emission microscope. The Fowler-Nordheim plot obtained from I-V characteristics of the wire showed a linear behavior typical that of metal. The field enhancement factor estimated from the slope of the F-N plot is 7455 cm(-1), indicating that the field emission is from nanometric features of the emitter. A current density of 10 A/cm(2) has been obtained at an applied field of 4.845 x 10(3) V/mu m. The field emission current-time record at a current level of 1 mu A for more than 3 h duration is promising for various field emissions based applications. (C) 2009 Published by Elsevier Masson SAS.

}, keywords = {Current stability, Fe doped, field emission, SnO2}, issn = {1293-2558}, doi = {10.1016/j.solidstatesciences.2009.02.011}, author = {Bhise, Ashok B. and Late, Dattatray J. and Sathe, Bhaskar R. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.} } @article { ISI:000285413300005, title = {Fabrication of In-doped SnO2 nanowire arrays and its field emission investigations}, journal = {Journal of Experimental Nanoscience}, volume = {5}, number = {6}, year = {2010}, month = {DEC}, pages = {PII 931283663}, publisher = {TAYLOR \& FRANCIS LTD}, address = {4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND}, abstract = {

The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mu A/cm2 is drawn from the emitter at an applied field of 4 V/mu m. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mu A is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.

}, keywords = {cold cathodes, device, Doping, field emission, Nanowires, SnO2}, issn = {1745-8080}, doi = {10.1080/17458081003671683}, author = {Bhise, Ashok B. and Late, Dattatray J. and Sathe, B. and More, Mahendra A. and Mulla, Imtiaz S. and Pillai, Vijayamohanan K. and Joag, Dilip S.} } @article { ISI:000281153600066, title = {High current density, low threshold field emission from functionalized carbon nanotube bucky paper}, journal = {Applied Physics Letters}, volume = {97}, number = {7}, year = {2010}, month = {AUG}, pages = {073102}, publisher = {AMER INST PHYSICS}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, abstract = {

Field emission studies of bucky paper of multiwalled carbon nanotubes (MWNTs), prepared after microwave (MW) assisted acid functionalization are reported along with a comparison with that of {\textquoteleft}{\textquoteleft}as-grown{\textquoteright}{\textquoteright} sample. MW treated bucky papers reveal an interesting linear field emission behavior in Fowler-Nordheim plot. The field emission currents at preset value are found to be remarkably stable over a period of more than 3 h sustaining current densities of 4.9 mA/cm(2) and 8.5 mA/cm(2) for {\textquoteleft}{\textquoteleft}as-grown{\textquoteright}{\textquoteright} and functionalized sample, respectively. The enhancement in the field emission due to functionalization has been discussed in terms of tip opening and defect induced charge transport caused by intershell and intertubular interaction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479049]

}, keywords = {Carbon nanotubes, current density, field emission, fullerenes}, issn = {0003-6951}, doi = {10.1063/1.3479049}, author = {Kakade, Bhalchandra A. and Pillai, Vijayamohanan K. and Late, Dattatray J. and Chavan, Padmakar G. and Sheini, Farid J. and More, Mahendra A. and Joag, Dilip S.} } @article {43231, title = {Band-like transport in high mobility unencapsulated single-layer MoS2 transistors}, journal = {Applied Physics Letters}, volume = {102}, year = {2013}, month = {APR}, pages = {Article Number: 173107}, abstract = {Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.}, doi = {10.1063/1.4803920}, author = {Jariwala, Deep and Sangwan, Vinod K. and Late, Dattatray J. and Johns, James E. and Dravid, Vinayak P. and Marks, Tobin J. and Lauhon, Lincoln J. and Hersam, Mark C.} } @article {43230, title = {Enhanced field-emission behavior of layered MoS2 sheets}, journal = {Small}, volume = {9}, year = {2013}, month = {AUG}, pages = {2730-2734}, abstract = {Field emission studies are reported for the first time on layered MoS2 sheets at the base pressure of approximate to 1 x 10(-8) mbar. The turn-on field required to draw a field emission current density of 10 A/cm(2) is found to be 3.5 V/m for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (approximate to 1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.}, doi = {10.1002/smll.201300002}, author = {Kashid, Ranjit V. and Late, Dattatray J. and Chou, Stanley S. and Huang, Yi-Kai and De, Mrinmoy and Joag, Dilip S. and More, Mahendra A. and Dravid, Vinayak P.} } @article {43232, title = {Sensing behavior of atomically thin-layered MoS2 transistors}, journal = {ACS Nano}, volume = {7}, year = {2013}, month = {JUN}, pages = {4879-4891}, abstract = {Most of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method. The thickness and layering of the sheets were identified by optical microscope, invoking recently reported specific optical color contrast, and further confirmed by AFM and Raman spectroscopy. The MoS2 transistors with different thicknesses were assessed for gas-sensing performances with exposure to NO2, NH3, and humidity in different conditions such as gate bias and light Irradiation. The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light. Further, our ab initio DFT calculations on single-layer and bilayer MoS2 show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.}, doi = {10.1021/nn400026u}, author = {Late, Dattatray J. and Huang, Yi-Kai and Liu, Bin and Acharya, Jagaran and Shirodkar, Sharmila N. and Luo, Jiajun and Yan, Aiming and Charles, Daniel and Waghmare, Umesh V. and Dravid, Vinayak P. and Rao, C. N. R.} } @article { ISI:000327521300003, title = {Superior field emission properties of layered WS2-RGO nanocomposites}, journal = {Scientific Reports}, volume = {3}, year = {2013}, month = {NOV}, pages = {3282}, publisher = {NATURE PUBLISHING GROUP}, address = {MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND}, abstract = {

We report here the field emission studies of a layered WS2-RGO composite at the base pressure of similar to 1 x 10(-8) mbar. The turn on field required to draw a field emission current density of 1 mu A/cm(2) is found to be 3.5, 2.3 and 2 V/mu m for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of similar to 800 mu A/cm(2) is drawn at an applied field of 4.1 V/mu m from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.

}, issn = {2045-2322}, doi = {10.1038/srep03282}, author = {Rout, Chandra Sekhar and Joshi, Padmashree D. and Kashid, Ranjit V. and Joag, Dilip S. and More, Mahendra A. and Simbeck, Adam J. and Washington, Morris and Nayak, Saroj K. and Late, Dattatray J.} } @article {43392, title = {Antimicrobial activity of ZnO nanoparticles against pathogenic bacteria and fungi}, journal = {JSM Nanotechnology and Nanomedicine}, volume = {2}, year = {2014}, month = {JAN}, pages = {1-7}, author = {Navale, G. R. and Thripuranthaka, M. and Late, Dattatray J. and Shinde, Sandip S.} } @article { ISI:000341152600073, title = {Enhanced field emission properties of doped graphene nanosheets with layered SnS2}, journal = {Applied Physics Letters}, volume = {105}, number = {4}, year = {2014}, month = {JUL}, pages = {043109}, publisher = {AMER INST PHYSICS}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, abstract = {

We report here our experimental investigations on p-doped graphene using tin sulfide (SnS2), which shows enhanced field emission properties. The turn on field required to draw an emission current density of 1 mu A/cm(2) is significantly low (almost half the value) for the SnS2/reduced graphene oxide (RGO) nanocomposite (2.65 V/mu m) compared to pristine SnS2 (4.8 V/mu m) nanosheets. The field enhancement factor beta (similar to 3200 for the SnS2 and similar to 3700 for SnS2/RGO composite) was calculated from Fowler-Nordheim (F-N) plots, which indicates that the emission is from the nanometric geometry of the emitter. The field emission current versus time plot shows overall good emission stability for the SnS2/RGO emitter. The magnitude of work function of SnS2 and a SnS2/graphene composite has been calculated from first principles density functional theory (DFT) and is found to be 6.89 eV and 5.42 eV, respectively. The DFT calculations clearly reveal that the enhanced field emission properties of SnS2/RGO are due to a substantial lowering of the work function of SnS2 when supported by graphene, which is in response to p-type doping of graphene. (C) 2014 AIP Publishing LLC.

}, issn = {0003-6951}, doi = {10.1063/1.4892001}, author = {Rout, Chandra Sekhar and Joshi, Padmashree D. and Kashid, Ranjit V. and Joag, Dilip S. and More, Mahendra A. and Simbeck, Adam J. and Washington, Morris and Nayak, Saroj K. and Late, Dattatray J.} } @conference { ISI:000352795700066, title = {Enhancement in the field emission behavior of graphene in N-2/O-2 high vacuum ambience}, booktitle = {2014 27th International Vacuum Nanoelectronics Conference (IVNC) }, series = {International Vacuum Nanoelectronics Conference}, year = {2014}, note = {27th International Vacuum Nanoelectronics Conference (IVNC), Engelberg, SWITZERLAND, JUL 06-10, 2014}, month = {JUL}, publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA}, organization = {IEEE, 345 E 47th ST, New York, NY 10017 USA}, address = {Engelberg, Switzerland}, abstract = {

Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N-2 and O-2 ambience at base pressure similar to 1x10(-6) torr. Interestingly, the graphene emitter when operated in N-2/O-2 ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of similar to 1 mu A over the period of more than 2 hrs is found better in the N2 ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O-2 ambience. The observed enhanced electron emission behavior in N-2/O-2 ambience is attributed to modulation of the work function of graphene emitter.

}, keywords = {graphene, Pressure Dependent Field Emission}, isbn = {978-1-4799-5306-6}, issn = {2164-2370}, doi = {10.1109/IVNC.2014.6894791}, author = {Suryawanshi, S. R. and Kolhe, Pankaj S. and Gavhane, D. S. and Patil, S. S. and Chavan, P. G. and More, Mahendra A. and Late, Dattatray J.}, editor = {Tsujino, S. and Gobrecht, J. and Paraliev, M. and Braun, H. H. and Groening, O. and Feurer, T.} } @article { ISI:000346266000074, title = {Field emission properties of ZnO nanosheet arrays}, journal = {Applied Physics Letters}, volume = {105}, number = {23}, year = {2014}, month = {DEC}, pages = {233101}, publisher = {AMER INST PHYSICS}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, abstract = {

{Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/mu m at 0.1 mu A/cm(2) and current density of 50.1 mu A/cm(2) at an applied field of 6.4 V/mu m with field enhancement factor

}, issn = {0003-6951}, doi = {10.1063/1.4903271}, author = {Naik, Kusha Kumar and Khare, Ruchita T. and Chakravarty, Disha and More, Mahendra A. and Thapa, Ranjit and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {43228, title = {In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3, arXiv preprint arXiv}, journal = {Condensed Matter Materials Science}, volume = {1}, year = {2014}, month = {SEP}, abstract = {

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD\&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD\&Os, and understanding the interactions of the atomic electronic states in such layered materials.

}, author = {Walia, Sumeet and Nili, Hussein and Balendhran, Sivacarendran and Late, Dattatray J. and Sriram, Sharath and Bhaskaran, Madhu} } @article { ISI:000344791100009, title = {Metallic few-layer flowerlike VS2 nanosheets as field emitters}, journal = {European Journal of Inorganic Chemistry}, number = {31}, year = {2014}, month = {NOV}, pages = {5331-5336}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

We report first-principles DFT calculations of the single-layer VS2 work function, the experimental synthesis of flower-like few-layer-thick VS2 nanosheets by a simple one-step hydrothermal method, and the investigation of their field emission properties. The turn-on field required to draw emission current densities of 1 and 10 mu A/cm(2) were 4 and 5.01 V/mu m, respectively. The observed turn-on field values are attributed to the high field enhancement factor (ca. 2500), which is due to presence of sharp protrusions in the VS2 nanosheets. Furthermore, the field-emission current stability of the VS2 emitter shows stable behavior over a period of 12 h. Further, DFT calculations show that the work function (f) of the single-layer VS2 emitter is 6.01 eV.

}, keywords = {Density functional calculations, field emission, Layered compounds, Nanostructures, Sulfur, Vanadium}, issn = {1434-1948}, doi = {10.1002/ejic.201402448}, author = {Rout, Chandra Sekhar and Khare, Ruchita T. and Kashid, Ranjit V. and Joag, Dilip S. and More, Mahendra A. and Lanzillo, Nicholas A. and Washington, Morris and Nayak, Saroj K. and Late, Dattatray J.} } @article { ISI:000209665200041, title = {MoS2 nanoparticles and h-BN nanosheets from direct exfoliation of bulk powder: one-step synthesis method}, journal = {Materials Research Express}, volume = {1}, number = {3}, year = {2014}, month = {SEP}, pages = {035038}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

We report facile synthesis of MoS2 nanoparticles and h-BN nanosheets using ultrasonication method in suitable solvents such as N-Methyl-2-pyrrolidone and ethylene glycol, respectively. The average size of MoS2 nanoparticles observed from TEM analysis were 4-5 nm and about a few hundreds of nm for h-BN nanosheets. Raman spectroscopy carried out on nanoparticle samples confirms the formation of MoS2 nanoparticles and h-BN nanosheets. UV-vis absorption and photoluminescence (PL) measurements carried out on the products show typical absorption and luminescence spectra of MoS2 and h-BN. Further, we attempted to decorate gold nanoparticles on nanosheets of MoS2 and h-BN which show subsequent change in Raman spectra due to charge transfer interaction.

}, keywords = {h-BN, MoS2, Nanoparticles, nanosheets, Optical properties}, issn = {2053-1591}, doi = {10.1088/2053-1591/1/3/035038}, author = {Thripuranthaka, M. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article { ISI:000346643600072, title = {Negative infrared photocurrent response in layered WS2/reduced graphene oxide hybrids}, journal = {Applied Physics Letters}, volume = {105}, number = {24}, year = {2014}, month = {DEC}, pages = {243502}, publisher = {AMER INST PHYSICS}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, abstract = {

We report high performance IR photocurrent response of two-dimensional hybrid materials consisting of layered WS2 nanosheets and reduced graphene oxide (RGO). Comparative photocurrent response studies of WS2 nanosheets, RGO, and WS2/RGO hybrids were carried out by performing current-voltage (I-V) and time-dependent current measurements with a laser excitation source having a wavelength of 808 nm. The experimental investigations indicate that WS2/RGO hybrids show negative photocurrent response, whereas WS2 and RGO show positive photocurrent response. The negative photocurrent response of the WS2/RGO hybrids is explained using a band alignment diagram and attributed to a charge transfer mechanism between WS2 and RGO. This analysis is further corroborated by first-principles density functional calculations. The fabricated device based on WS2/RGO hybrids shows a photosensitivity R-lambda of about 6 AW(-1) and a quantum efficiency eta of similar to 924\%, which demonstrates high sensitivity of the hybrid material towards IR detection. WS2/RGO hybrids are therefore promising candidates for potential applications in optoelectronic circuits and low cost, high performance, and reliable photodetectors. (C) 2014 AIP Publishing LLC.

}, issn = {0003-6951}, doi = {10.1063/1.4903780}, author = {Ratha, Satyajit and Simbeck, Adam J. and Late, Dattatray J. and Nayak, Saroj K. and Rout, Chandra Sekhar} } @conference {46367, title = {Photosensitive field emission study of SnS2 nanosheets (27th International Vacuum Nanoelectronics Conference )}, booktitle = {2014 27TH International Vacuum Nanoelectronics Conference (IVNC)}, year = {2014}, month = {JUL}, publisher = {Paul Scherrer Inst; EMPA, Mat Sci \& Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices Soc}, organization = {Paul Scherrer Inst; EMPA, Mat Sci \& Technol; Swiss Nanoscience Inst; Appl MicroSWISS; Amer Elements; Amer Vacuum Soc; IEEE, Electron Devices Soc}, address = {345 E 47TH ST, NEW YORK, NY 10017 USA}, abstract = {

SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to Field Emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solution are used. The FE study is carried out in all metal Ultra High Vacuum (UHV) chamber in planar diode configuration at a base pressure of similar to 10(-8) torr. A maximum current density of 110 mu A/cm(2) was attainable. The turn on field required to draw a current density of 1 mu A/cm(2) is found to be 2.6 V/mu m. A separate study was carried out to investigate the photosensitivity of the emitter by illuminating the specimen under visible light. In dark, the FN plot is non-linear, indicative of semiconductor nature of the emitter. However, on illumination, the FN plot is observed to be linear. This remarkable change can be explained by the photoconductivity imparted on illumination. The field at the tip is high in presence of light, than in dark, due to enhanced conductivity. It is also observed that on switching ON the light, the FE current increases almost instantaneously. Repetitive switching is observed at a fixed applied voltage, generating current pulses. The visible light soaking of the sample is carried out by illuminating the lamp for more than 100 minutes, where the current seems to saturate. On switching off the lamp the emission current decayed almost to its initial value exponentially. The photosensitivity has been studied for different wavelengths in the visible spectra. The maximum photosensitive field emission is observed for green filter. With this photoresponse, it is envisaged that SnS2 nanosheets are a potential candidate for optoelectronic applications of field emitters.

}, keywords = {field emission, photosensitivity, Photoswitching}, isbn = {978-1-4799-5306-6}, author = {Joshi, Padmashree D. and Joag, Dilip S. and Rout, Chandra Shekhar and Late, Dattatray J.}, editor = {Tsujino, S and Gobrecht, J and Paraliev, M and Braun, HH and Groening, O and Feurer, T} } @article { ISI:000342328300031, title = {Pulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies}, journal = {ACS Applied Materials \& Interfaces}, volume = {6}, number = {18}, year = {2014}, month = {SEP}, pages = {15881-15888}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 mu A/cm(2) is found to be 2.8 V/mu m. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of similar to 30 mA/cm(2) at a relatively lower applied voltage of similar to 3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLDMoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

}, keywords = {field emission, MoS2, photodiode heterostructures, pulsed laser deposition, thin film}, issn = {1944-8244}, doi = {10.1021/am503464h}, author = {Late, Dattatray J. and Shaikh, Parvez A. and Khare, Ruchita T. and Kashid, Ranjit V. and Chaudhary, Minakshi V. and More, Mahendra A. and Ogale, Satishchandra B.} } @article { ISI:000346266000076, title = {Single-layer MoSe2 based NH3 gas sensor}, journal = {Applied Physics Letters}, volume = {105}, number = {23}, year = {2014}, month = {DEC}, pages = {233103}, publisher = {AMER INST PHYSICS}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, abstract = {

High performance chemical sensor is highly desirable to detect traces of toxic gas molecules. Two dimensional (2D) transition metal dichalcogenides (TMDC) semiconducting materials has attracted as high performance gas sensor device applications due to unique properties such as high surface to volume ratio. Here, we describe the utilization of single-layer MoSe2 as high-performance room temperature NH3 gas sensors. Our single-layer MoSe2 based gas sensor device shows comprehensible detection of NH3 gas down to 50 ppm. We also confirmed gas sensing measurement by recording the Raman spectra before and after exposing the device to NH3 gas, which subsequently shows the shift due to charger transfer and analyte gas molecule adsorption on surface of single-layer MoSe2 nanosheet. Our investigations show the potential use of single-layer and few layer thick MoSe2 and other TMDC as high-performance gas sensors. (C) 2014 AIP Publishing LLC.

}, issn = {0003-6951}, doi = {10.1063/1.4903358}, author = {Late, Dattatray J. and Doneux, Thomas and Bougouma, Moussa} } @article { ISI:000330201900057, title = {Temperature Dependent Phonon Shifts in Single-Layer WS2}, journal = {Acs Applied Materials \& Interfaces}, volume = {6}, number = {2}, year = {2014}, month = {JAN}, pages = {1158-1163}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

Atomically thin two-dimensional tungsten disulfide (WS2) sheets have attracted much attention due to their potential for future nanoelectronic device applications. We report first experimental investigation on temperature dependent Raman spectra of single-layer WS2 prepared using micromechanical exfoliation. Our temperature dependent Raman spectroscopy results shows that the E-2g(1) and A(1g) modes of single-layer WS2 soften as temperature increases from 77 to 623 K. The calculated temperature coefficients of the frequencies of 2LA(M), E-2g(1), A(1g), and A(1g)(M) + LA(M) modes of single-layer WS2 were observed to be -0.008, -0.006, -0.006, and -0.01 cm(-1) K-1, respectively. The results were explained in terms of a double resonance process which is active in atomically thin nanosheet. This process can also be largely applicable in other emerging single-layer materials.

}, keywords = {layered materials, phonon vibrations, Raman spectroscopy, thermal effect, WS2}, issn = {1944-8244}, doi = {10.1021/am404847d}, author = {Thripuranthaka, M. and Late, Dattatray J.} } @article { ISI:000334078500086, title = {Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets (vol 104, 081911, 2014)}, journal = {Applied Physics Letters}, volume = {104}, number = {12}, year = {2014}, month = {MAR}, pages = {129901}, publisher = {AMER INST PHYSICS}, address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA}, issn = {0003-6951}, doi = {10.1063/1.4869463}, author = {Thripuranthaka, M. and Kashid, Ranjit V. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article { ISI:000332619100046, title = {Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets}, journal = {Applied Physics Letters}, volume = {104}, number = {8}, year = {2014}, month = {FEB}, pages = {081911}, publisher = {AMER INST PHYSICS}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, abstract = {We have systematically investigated the temperature dependent Raman spectroscopy behavior of a few layered MoS2 and WS2 nanosheets synthesized using simple hydrothermal method. Our result reveals A(1g) and E-2g(1) modes soften as temperature increases from 77 K to 623 K. This behavior can be explained in terms of a double resonance process which is active in single-and few layer thick nanosheets. The frequency shifts and peak broadening can provide unambiguous, nondestructive, and accurate information of a few layered MoS2 and WS2. This mechanism can also be applicable in characterizing the structural, optical, electronic, and vibrational properties of other emerging layered materials. (c) 2014 AIP Publishing LLC.}, issn = {0003-6951}, doi = {10.1063/1.4866782}, author = {Thripuranthaka, M. and Kashid, Ranjit V. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article { ISI:000337521700009, title = {Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2}, journal = {ChemPhysChem}, volume = {15}, number = {8}, year = {2014}, month = {JUN}, pages = {1592-1598}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

We report the temperature-dependent Raman spectra of single-and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2u)(2) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strainphonon coupling.

}, issn = {1439-4235}, doi = {10.1002/cphc.201400020}, author = {Late, Dattatray J. and Shirodkar, Sharmila N. and Waghmare, Umesh V. and Dravid, Vinayak P. and Rao, C. N. R.} } @article { ISI:000337124900036, title = {Unusual morphologies of reduced graphene oxide and polyaniline nanofibers-reduced graphene oxide composites for high performance supercapacitor applications}, journal = {RSC Advances}, volume = {4}, number = {43}, year = {2014}, month = {APR}, pages = {22551-22560}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Herein, we have demonstrated the nanostructured rose flowers, sheets, rods and ferns of reduced graphene oxide by using oxalic acid as a reducing agent. The various morphologies of reduced graphene oxide were obtained by time dependent reduction of graphene oxide. The composites of reduced graphene oxide based polyaniline nanofibers, flower bouquet, and honeycombs were grown at a moderate temperature (60 degrees C) by in situ polymerization of aniline. The structural characterization of composites was performed by using X-ray diffraction, and the existence of reduced graphene oxide in different size, shape and thickness was confirmed by Raman spectroscopy and transmission electron microscopy study. The electrochemical study of reduced graphene oxides and their composites with polyaniline nanostructures was performed. The composite of honeycomb reduced graphene oxide-polyaniline nanofibers showed enhancement in the electrochemical performance (specific capacitance: 470 F g(-1)) compared to earlier reports. Such type of composites will be a potential contender for super capacitors.

}, issn = {2046-2069}, doi = {10.1039/c3ra47834c}, author = {Diggikar, Rahul S. and Late, Dattatray J. and Kale, Bharat B.} } @article { ISI:000355001000007, title = {3D Hetero-architecture of GdB6 nanoparticles on lessened cubic Cu2O nanowires: enhanced field emission behaviour}, journal = {CrystEngComm}, volume = {17}, number = {21}, year = {2015}, month = {MAR}, pages = {3936-3944}, publisher = {ROYAL SOC CHEMISTRY}, type = {Article}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

The field emission properties (FE) of a heteroarchitecture comprised of gadolinium hexaboride nanoparticles uniformly decorated over Cu2O nanoneedles (GdB6/Cu2O) have been investigated at the base pressure of similar to 1 x 10(-8) mbar. Under the optimized pulsed laser deposition (PLD), a well-adhered coating of GdB6 nanoparticles on chemically synthesized cuprous oxide (Cu2O) nanoneedles has been obtained. A plausible growth mechanism of the hierarchical assembly of GdB6 nanoparticles on the Cu2O nanoneedles is explained on the basis of structural analysis carried out using SEM and TEM. A low turn-on field of similar to 2.3 V mu m(-1) (to draw an emission current density similar to 1 mu A cm(-2)) is observed along with stable emission current at the preset value of similar to 2 mu A over 4 h. The enhanced emission behaviour of the GdB6/Cu2O heteroarchitecture, in contrast to the pristine Cu2O nanoneedles, is attributed to its high aspect ratio and low work function. The observed FE results demonstrate GdB6/Cu2O heteroarchitecture as a potential candidate for application in various vacuum nano/microelectronic devices.

}, issn = {1466-8033}, doi = {10.1039/c4ce02530j}, author = {Suryawanshi, Sachin R. and Singh, Anil K. and Deo, Meenal S. and Late, Dattatray J. and Sinha, Sucharita and More, Mahendra A.} } @proceedings {42927, title = {Black phosphorous nanosheets: prospective field emitter}, year = {2015}, month = {JUL}, pages = {94-95}, publisher = {IEEE, 345 E 47th St, New York, NY 10017 USA}, address = {Guangzhou, Peoples R China}, abstract = {

We report for the first time field electron emission investigations on few layered black phosphorous nanosheets emitter{\textquoteright}s synthesized using chemical method with thickness similar to 2-5 nm. The turn-on electric field required to draw an emission current density of similar to 10 mu A/cm(2) was found to be similar to 4.2 V/mu m. Furthermore, a few layer black phosphorous nanosheets emitter deliver an large emission current density of similar to 170 mu A/cm(2) at an applied field of similar to 7.5 V/mu m. The emission current versus time plot measured at the preset current values of similar to 5 mu A shows field emission current fluctuations within +/- 10\% of the average value indicating the well stable nature of black phosphorous field emitter. Thus, the two dimensional black phosphorous nanosheets synthesized using simple electrochemical exfoliation method can be realized and utilized for the next generation micro/nanoelectronics and flat panel field emission based display applications.

}, author = {Late, Dattatray J. and Erande, Manisha B. and Suryawanshi, Sachin R. and More, Mahendra A.} } @article { ISI:000357498200004, title = {Combined experimental and theoretical study of the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2}, journal = {Journal of Physics-Condensed Matter}, volume = {27}, number = {28}, year = {2015}, month = {JUL}, pages = {285401}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

The recent discovery of non-saturating giant positive magnetoresistance has aroused much interest in Td-WTe2. We have investigated structural, electronic and vibrational properties of bulk and few-layer Td-WTe2 experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe2 and its structural link with the metallic 1 T form provides an understanding of its structural stability. There is a metal-to-insulator switch-over in the electrical conductivity and a change in the sign of the Seebeck coefficient around 373 K. Lattice vibrations of Td-WTe2 have been analyzed using first-principles calculations. Out of the 33 possible zone-center Raman active modes, five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm(-1) in bulk Td-WTe2. Based on symmetry analysis and calculated Raman tensors, we assign the intense bands at 165 cm(-1) and 212 cm(-1) to the A(1){\textquoteright} and A(1){\textquoteright}{\textquoteright} modes, respectively. Most of the Raman bands stiffen with decreasing thickness, and the ratio of the integrated intensities of the A(1){\textquoteright}{\textquoteright} to A(1){\textquoteright} bands decreases in the few-layer sample, while all the bands soften in both the bulk and few-layer samples with increasing temperature.

}, keywords = {Raman spectroscopy, Td-structure, tungsten ditelluride}, issn = {0953-8984}, doi = {10.1088/0953-8984/27/28/285401}, author = {Jana, Manoj K. and Singh, Anjali and Late, Dattatray J. and Rajamathi, Catherine R. and Biswas, Kanishka and Felser, Claudia and Waghmare, Umesh V. and Rao, C. N. R.} } @article { ISI:000357868100006, title = {Electrochemically exfoliated black phosphorus nanosheets - prospective field emitters}, journal = {European Journal of Inorganic Chemistry}, number = {19}, year = {2015}, month = {JUL}, pages = {3102-3107}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

Herein we report field emission (FE) investigations on an electrochemically exfoliated few-layered black phosphorus nanosheet emitter at a base pressure of approximately 1x10(-8) mbar. The turn-on electric field required to draw an emission current density of approximately 10 A/cm(2) is found to be about 4.2 V/m. Furthermore, few-layered black phosphorus nanosheet emitters deliver an emission current density of about 170 A/cm(2) at an applied field of about 7.5 V/m. The emission current vs. time plot measured at preset current values of about 5 A shows emission current fluctuations within +/- 10\% of the average value, indicating the highly stable nature of the black phosphorus field emitter. Thus, the 2D black phosphorus nanosheets synthesized using the simple electrochemical exfoliation method can be utilized for micro/nanoelectronics and flat panel FE display applications.

}, keywords = {field emission, Layered compounds, Nanostructures, Phosphorus}, issn = {1434-1948}, doi = {10.1002/ejic.201500145}, author = {Erande, Manisha B. and Suryawanshi, Sachin R. and More, Mahendra A. and Late, Dattatray J.} } @article {42918, title = {Emerging energy applications of two-dimensional layered materials}, journal = {Canadian Chemical Transactions}, volume = {3}, year = {2015}, month = {MAR}, pages = {118-157}, abstract = {

Atomically thin semiconducting transition metal dichalcogenides (TMDCs) layered materials have recently been emerged as an exciting area of research due to accessibility for easy synthesis using various chemical and physical methods. These two-dimensional (2D) layered materials with single layer have direct and wide band gap due to which, they are more suitable for nanoelectronics and optoelectronics device applications. Here, we present a review of the energy related aspects of atomically thin layered materials like MoS2, WS2, MoSe2, WSe2, InSe, GaSe, GaTe, MoTe2, WTe2 etc. for supercapacitor, solar cell, lithium ion battery and water splitting application. By significantly assessing various materials and comparing their performances with challenging technology, the advantages and disadvantages of this promising area of energy materials are recognized, which may provide guidelines for future progress.

}, doi = {10.13179/canchemtrans.2015.03.02.0174}, author = {Late, Dattatray J. and Rout, Chandra Sekhar and Chakravarty, Disha and Ratha, Satyajit} } @article { ISI:000370057200011, title = {Enhanced electron field emission from NiCo2O4 nanosheet arrays}, journal = {Materials Research Express}, volume = {2}, number = {9}, year = {2015}, month = {SEP}, pages = {095011}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

Electron emission properties of electrodeposited spinel NiCo2O4 nanosheet arrays grown on Ni foam have been studied. The work function of NiCo2O4 was calculated by density functional theory using the plane-wave basis set and used to estimate the field enhancement factor. The NiCo2O4 nanosheet arrays exhibited a low turn-on field of 1.86 V mu m(-1) at 1 mu A cm(-2) and current density of 686 mu A cm(-2) at 3.2 V mu m(-1), with field enhancement factor beta = 1460 and good field emission current stability. The field emission properties of the NiCo2O4 nanosheet arrays showed enhanced performance compared to chemically prepared NiCo2O4 nanosheets. Hence, the nanosheet arrays have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

}, keywords = {Density functional theory, field emission, nanosheets, NiCo2O4, spinel}, issn = {2053-1591}, doi = {10.1088/2053-1591/2/9/095011}, author = {Naik, Kusha Kumar and Khare, Ruchita T. and Gelamo, Rogerio V. and More, Mahendra A. and Thapa, Ranjit and Late, Dattatray J. and Rout, Chandra Sekhar} } @article { ISI:000361832600067, title = {Enhanced field emission of plasma treated multilayer graphene}, journal = {Applied Physics Letters}, volume = {107}, number = {12}, year = {2015}, month = {SEP}, pages = {123503}, publisher = {AMER INST PHYSICS}, address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}, abstract = {

Electron emission properties of multilayer graphene (MLG) prepared by a facile exfoliation technique have been studied. Effect of CO2 Ar, N-2, plasma treatment was studied using Raman spectroscopy and investigated for field emission based application. The CO2 plasma treated multilayer graphene shows an enhanced field emission behavior with a low turn on field of 0.18 V/mu m and high emission current density of 1.89 mA/cm(2) at an applied field of 0.35 V/mu m. Further the plasma treated MLG exhibits excellent current stability at a lower and higher emission current value. (C) 2015 AIP Publishing LLC.

}, issn = {0003-6951}, doi = {10.1063/1.4931626}, author = {Khare, Ruchita T. and Gelamo, Rogerio V. and More, Mahendra A. and Late, Dattatray J. and Rout, Chandra Sekhar} } @article { ISI:000352803900014, title = {Exfoliation of bulk inorganic layered materials into nanosheets by the rapid quenching method and their electrochemical performance}, journal = {European Journal of Inorganic Chemistry}, number = {11}, year = {2015}, month = {APR}, pages = {1973-1980}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

We report herein the results of our investigations on the synthesis of transition-metal dichalcogenide (TMDC) semiconductor layered materials of MoS2, WS2, MoSe2, and WSe2 by the rapid quenching method. The bulk powders were added to deionized water in a polypropylene tube and subsequently flushed with argon gas. Thirty rapid freezing (30 s in a liquid nitrogen bath) and heating (20 min in an oil bath at 60 degrees C) cycles were then carried out. The reaction product was obtained in a yield in excess of 60 wt.-\%, which indicates that the method can be utilized on an industrial scale for the production of 2D nanosheets. The as-synthesized products were then characterized by TEM, which revealed nanosheet-like morphologies. Raman spectroscopy confirmed the high quality of the nanosheet samples. The exfoliated samples also showed good electrochemical performance. Of the TMDC samples investigated, the WSe2 nanosheets were found to give the best performance due to their uniform morphology, large surface area, and fewest number of defects.

}, keywords = {chalcogenides, Electrochemistry, Layered compounds, Molybdenum, Nanostructures, Tungsten}, issn = {1434-1948}, doi = {10.1002/ejic.201500039}, author = {Chakravarty, Disha and Late, Dattatray J.} } @article { ISI:000354445900067, title = {Facile synthesis of Ag nanowire-rGO composites and their promising field emission performance}, journal = {RSC Advances}, volume = {5}, number = {52}, year = {2015}, month = {APR}, pages = {41887-41893}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Crystalline, ultra long silver nanowires (Ag NWs), few-layered rGO (reduced graphene oxide) and their rGO-Ag NW nanocomposite have been synthesized using a polyol reflux technique under optimized experimental conditions. The field emission performance of the rGO-Ag NW nanocomposite, rGO and Ag NW emitters was investigated. The turn on field required to draw an emission current density of similar to 1 mA cm(-2) was found to be similar to 5.00, 3.92 and 2.40 V mu m(-1) for the Ag NW, rGO and rGO-Ag NW nanocomposite emitters, respectively. The combined contribution of the sharp edges of the thin graphene sheets and high aspect ratio of the Ag nanowires, and their synergetic effect in the rGO-Ag NW nanocomposite, are responsible for the enhanced field emission behavior. First-principles density functional calculations show that the enhanced field emission may also be due to the overlapping of the electronic structures of the Ag NWs and rGO nanosheets.

}, issn = {2046-2069}, doi = {10.1039/c5ra00308c}, author = {Samantara, Aneeya K. and Mishra, Dillip Kumar and Suryawanshi, Sachin R. and More, Mahendra A. and Thapa, Ranjit and Late, Dattatray J. and Jena, Bikash Kumar and Rout, Chandra Sekhar} } @article { ISI:000346733500087, title = {Field emission properties of spinel ZnCo2O4 microflowers}, journal = {RSC Advances}, volume = {5}, number = {7}, year = {2015}, month = {DEC}, pages = {5372-5378}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

ZnCo2O4 microflowers were synthesized by a simple low temperature hydrothermal route. A single three-dimensional microflower consists of hundreds of self-assembled petals, with a thickness of several nanometers. These microflowers have exceptionally thin edges with a few petal layers. The ZnCo2O4 microflowers appeared to be stable and good field emitters.

}, issn = {2046-2069}, doi = {10.1039/c4ra10246k}, author = {Ratha, Satyajit and Khare, Ruchita T. and More, Mahendra A. and Thapa, Ranjit and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {42919, title = {Graphene nanoribbons as prospective field emitter}, journal = {Applied Physics Letters}, volume = {106}, year = {2015}, month = {JAN}, pages = {Article Number: 023111}, abstract = {

Field emission characteristics of graphene nanoribbons (GNRs) synthesized by unzipping of multiwall carbon nanotubes using a facile hydrothermal route have been investigated at a base pressure of 1 x 10(-8) mbar. The values of turn-on field, required to draw an emission current densities of 1 and 10 mu A/cm(2), are found to be 2.8 and 5.8 V/mu m, respectively, and a maximum emission current density of 500 mu A/cm(2) has been drawn at an applied field of 9.8 V/mu m. The emission current stability of the GNRs emitter was studied at preset values of 1 and 10 mu A over a period of 3 h, and is found to be excellent. The field emission results demonstrated herein suggest that GNRs based field emitters can open up many opportunities for their potential utilization as large area field emitters in various vacuum micro-nanoelectronic devices such as flexible field emission displays, portable X-ray, and microwave tubes. (C) 2015 AIP Publishing LLC.

}, doi = {10.1063/1.4905473}, author = {Khare, Ruchita T. and Shinde, Dhanraj B. and Bansode, Sanjeewani and More, Mahendra A. and Majumder, Mainak and Pillai, Vijayamohanan K. and Late, Dattatray J.} } @article { ISI:000360634900028, title = {Graphene quantum dots as enhanced plant growth regulators: effects on coriander and garlic plants}, journal = {Journal of the Science of Food and Agriculture}, volume = {95}, number = {13}, year = {2015}, month = {OCT}, pages = {2772-2778}, publisher = {WILEY-BLACKWELL}, address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA}, abstract = {

BACKGROUNDWe report investigations on the use of graphene quantum dots for growth enhancement in coriander (Coriandrum sativam L.) and garlic (Allium sativum) plants. The as-received seeds of coriander and garlic were treated with 0.2 mg mL(-1) of graphene quantum dots for 3 h before planting. RESULTSGraphene quantum dots enhanced the growth rate in coriander and garlic plants, including leaves, roots, shoots, flowers and fruits, when the seeds were treated with graphene quantum dots. CONCLUSIONOur investigations open up the opportunity to use graphene quantum dots as plant growth regulators that can be used in a variety of other food plants for high yield. (c) 2015 Society of Chemical Industry

}, keywords = {farming, food, graphene quantum dots, nanotechnology, plant growth regulator}, issn = {0022-5142}, doi = {10.1002/jsfa.7106}, author = {Chakravarty, Disha and Erande, Manisha B. and Late, Dattatray J.} } @article { ISI:000365525900102, title = {High performance single crystalline PbWO4 nanorod field effect transistor}, journal = {Journal of Materials Science-Materials in Electronics}, volume = {26}, number = {12, SI}, year = {2015}, month = {DEC}, pages = {10044-10048}, publisher = {SPRINGER}, address = {VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS}, abstract = {

The highly crystalline PbWO4 nanorods were synthesized using simple co-precipitation method which has application in field effect transistor. The synthesized PbWO4 nanorods were characterized by XRD, Raman spectroscopy, TEM and HRTEM indicating highly crystalline nature. Field effect transistor was fabricated on pre-patterned 300 nm SiO2/Si substrates using photolithography technique with channel length 1 A mu m and width 20 A mu m. Thin film (similar to 100 nm) was made up of PbWO4 nanorods by spin coating on the pre-patterned device used as channel layer. The field effect mobility was observed to be 4.7 cm(2) V-1 s(-1) and I-ON/OFF ratio similar to 10(3) which is far better than the organic molecules due to single crystalline nature and rod like morphology of the PbWO4 providing direct path for charges to transport towards channel.

}, issn = {0957-4522}, doi = {10.1007/s10854-015-3685-9}, author = {Walke, Pravin S. and Patil, Vandana B. and Mulla, Imtiaz S. and Late, Dattatray J.} } @article {42930, title = {Impedimetric humidity sensor based on ?-Fe2O3 nanoparticles}, journal = {Advanced Device Materials}, volume = {1}, year = {2015}, month = {JAN}, pages = {88-92}, abstract = {

Humidity sensing characteristics of thick-film sensors based on α-Fe2O3 nanoparticles synthesized by hydrothermal method have been reported. The as-synthesized α-Fe2O3 nanoparticles were characterized by using XRD, Raman spectroscopy, TEM and HRTEM. Our TEM result depicts that the size of α-Fe2O3 nanoparticles were in the range of 20{\textendash}30 nm with highly crystalline nature. For humidity sensing experiment, the sensitivity of our α-Fe2O3 nanoparticles-based sensor device was found to be \~{}99\% and the fastest response times were noted, which indicate that the α-Fe2O3 nanoparticle-based humidity sensor device has more future prospects and demand. The humidity sensing properties of α-Fe2O3 nanoparticles seem to be associated to the sorption sites for the water molecules at the nanoparticles interfaces.

}, author = {Patil, U. V. and Rout, C. S. and Late, Dattatray J.} } @article { ISI:000350222400033, title = {Microwave and hydrothermal syntheses of WSe2 micro/nanorods and their application in supercapacitors}, journal = {RSC Advances}, volume = {5}, number = {28}, year = {2015}, month = {FEB}, pages = {21700-21709}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

WSe2 micro/nanorods were synthesized using one step microwave and hydrothermal methods. The as synthesized micro/nanorod samples of WSe2 were characterized using various characterization techniques such as SEM, TEM, Raman spectroscopy, X-ray diffraction, UV-visible and PL spectroscopy. The as synthesized samples were also tested for their applicability to use as cathode materials for supercapacitor applications. The WSe2 samples prepared by the microwave and hydrothermal methods (with use of tungstic acid as precursor) show noteworthy performance towards supercapacitor application. Our work opens a new avenue to use these simple methods to prepare various morphologies of inorganic nanomaterials and utilize them for various energy and nanoelectronics applications.

}, issn = {2046-2069}, doi = {10.1039/c4ra12599a}, author = {Chakravarty, Disha and Late, Dattatray J.} } @article { ISI:000351435100014, title = {Microwave-assisted synthesis of few-layered TaTe2 and its application as supercapacitor}, journal = {European Journal of Inorganic Chemistry}, number = {9}, year = {2015}, month = {MAR}, pages = {1598-1603}, publisher = {WILEY-V C H VERLAG GMBH}, address = {BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY}, abstract = {

We report a simple and rapid microwave-assisted synthesis of tantalum telluride (TaTe2) nanosheets. The ratio of tantalum pentachloride (TaCl5) and elemental tellurium (Te) powder were adjusted in the presence of NaBH4 in such a way as to obtain the TaTe2 nanosheet. The samples were characterized by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), UV/Vis spectroscopy, photoluminescence (PL) spectroscopy, and XRD. Our SEM, TEM, and AFM results show the formation of sheet-like morphology, while the XRD data confirms the high crystalline quality and stable phase of the TaTe2 formed. The supercapacitor cells were fabricated by using TaTe2 nanosheets as anode material, platinum metal wire as a counterelectrode, and Ag/AgCl as reference electrode. The calculated coulombic efficiency is more than 95\%, while the cycle-to-cycle decrease in capacity is less than 5\%. The maximum discharge or charging capacity is below 2.4 Wh/kg, which is an ideal characteristic for achieving supercapacitor behavior.

}, keywords = {Microwave chemistry, Nanostructures, Supercapacitors, Tantalum, Tellurium}, issn = {1434-1948}, doi = {10.1002/ejic.201403220}, author = {Chakravarty, Disha and Kumar, Praveen and Ugale, Vaishali S. and Late, Dattatray J.} } @article { ISI:000363163200048, title = {Nanostructured 2D MoS2 honeycomb and hierarchical 3D CdMoS4 marigold nanoflowers for hydrogen production under solar light}, journal = {Journal of Materials Chemistry A}, volume = {3}, number = {42}, year = {2015}, month = {SEP}, pages = {21233-21243}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Unique two dimensional (2D) honeycomb layered MoS2 nanostructures and hierarchical 3D marigold nanoflowers of CdMoS4 were designed using a template free and facile solvothermal method. The MoS2 structure is depicted with a sheet like morphology with lateral dimensions of 5-10 mu m and a thickness of similar to 200 nm and a honeycomb nanostructure architecture produced via the self-assembling of vertically grown thin hexagonal nanosheets with a thickness of 2-3 nm. The 3D CdMoS4 marigold nanoflower architecture comprised thin nanopetals with lateral dimensions of 1-2 mu m and a thickness of a few nm. The CdMoS4 and MoS2 structures displayed hydrogen ( H-2) production rates of 25 445 and 12 555 mu mol h(-1) g(-1), respectively. The apparent quantum yields of hydrogen production were observed to be 35.34\% and 17.18\% for CdMoS4 and MoS2, respectively. The 3D nanostructured marigold flowers of CdMoS4 and honeycomb like 2D nanostructure of MoS2 were responsible for higher photocatalytic activity due to inhibition of the charge carrier recombination. The prima facie observation of H-2 production showed that the ternary semiconductor confers enhanced photocatalytic activity for H-2 generation due to its unique structure. Such structures can be designed and implemented in other transition metal dichalcogenide based ternary materials for enhanced photocatalytic and other applications.

}, issn = {2050-7488}, doi = {10.1039/c5ta04617c}, author = {Kadam, Sunil R. and Late, Dattatray J. and Panmand, Rajendra P. and Kulkarni, Milind V. and Nikam, Latesh K. and Gosavi, Suresh W. and Park, Chan J. and Kale, Bharat B.} } @proceedings {42926, title = {One-pot thermal evaporation synthesis of CdS-RGO hetrostructure and its field emission study}, year = {2015}, month = {JUL}, pages = {82-83}, publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA}, address = {Guangzhou, Peoples R China}, abstract = {

CdS-RGO heterostructure was synthesized by thermal evaporation method. The as-synthesized CdS-RGO heterostructure was characterized using X-ray Diffraction, SEM, and EADX, before field emission (FE) studies. The FE characteristics of a planar emitter made up of as-synthesized CdS-RGO heterostructures were measured at the base pressure 1x10(-8) mbar. The synthesized CdS-RGO heterostructure emitter is found to deliver a current density similar to 70 mu A/cm(2) at an applied electric field of similar to 4.7 V/mu m. Moreover, the nanocomposite shows excellent emission stability without significant current degradation making CdS-RGO heterostructure as a promising electron source for practical applications in various vacuum nano-microelectronic devices.

}, author = {Bansode, Sanjeewani R. and Khare, Ruchita T. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000361116500070, title = {Oxidative and membrane stress-mediated antibacterial activity of WS2 and rGO-WS2 nanosheets}, journal = {RSC Advances}, volume = {5}, number = {91}, year = {2015}, month = {AUG}, pages = {74726-74733}, publisher = {ROYAL SOC CHEMISTRY}, type = {Article}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Graphene-based materials have strong cytotoxic attributes against bacteria due to their unique physicochemical properties. We examined the antibacterial activities of nanosheets of the graphene analogue tungsten disulphide (WS2) and a composite of reduced graphene oxide-tungsten disulphide (rGO-WS2), comparing them with reduced graphene oxide (rGO) by a time and concentration dependent viability assay and growth curve studies against four bacterial strains: Gram negative Escherichia coli (E. coli) and Salmonella typhimurium (S. typhimurium), and Gram positive Bacillus subtilis (B. subtilis) and Staphylococcus epidermidis (S. epidermidis). The nanosheets of the rGO-WS2 composite caused a more significant retardation in bacterial growth and inhibitory effect on the tested bacterial strains than WS2, followed by rGO. The tested E. coli and B. subtilis strains were more susceptible than the other strains. A mechanistic study revealed that rGO and WS2 did not produce the superoxide anion (O-2(-)) or reactive oxygen species (ROS), but the nanocomposite of rGO-WS2 did produce both. However, all these materials did oxidize glutathione, which serves as a redox state mediator in bacteria. We conclude that the antimicrobial mechanism is due to the combined effect of initial cell deposition on the rGO-WS2 materials, the membrane stress due to direct contact with the nanosheets, and the produced superoxide anion-independent oxidation mechanisms. The beneficial aspects of the physicochemical properties of rGO-WS2, such as its size and conductivity, can be precisely customized to reduce its health and environmental risk factors.

}, issn = {2046-2069}, doi = {10.1039/c5ra15652a}, author = {Navale, Govinda R. and Rout, Chandra Sekhar and Gohil, Kushal N. and Dharne, Mahesh S. and Late, Dattatray J. and Shinde, Sandip S.} } @article {42916, title = {Perspective on atomically thin 2d inorganic layered materials for biosensor}, journal = {Journal of Nanomedicine Research}, volume = {2}, year = {2015}, month = {JAN}, author = {Late, Dattatray J. and Rout, C. S. and Chakravarty, Disha and Ratha, S.} } @article { ISI:000355011700006, title = {Photosensitive field emission study of SnS2 nanosheets}, journal = {Journal of Vacuum Science \& Technology B}, volume = {33}, number = {3}, year = {2015}, month = {MAY}, pages = {Article Number: 03C106}, publisher = {A V S AMER INST PHYSICS}, address = {STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA}, abstract = {

SnS2 nanosheets (SnS(2)NSs), synthesized by one-step hydrothermal reaction, are subjected to field emission (FE) studies. For synthesis, specific concentrations of Na2SnO3 and thioamide solutions are used. The FE study is carried out in a planar diode configuration at a base pressure of similar to 10(-8) mbar. The emission photosensitivity is also investigated by illuminating the specimen with a visible light source. In dark, the turn on field, the electric field required to obtain a current density of 1 mu A/cm(2), is found to be 5.9 V/mu m. Upon illumination, the emitter with visible light, it is found to reduce to 5.0 V/mu m. A significant change in the nature of the Fowler-Nordheim plot with light illumination is also observed and has been explained on the basis of photoconductivity. Repetitive switching ON and OFF the light source, at a fixed applied voltage, is found to generate current pulses. The photosensitivity is also studied with various color filters. With the photoswitching and the enhanced field emission properties, it is envisaged that SnS(2)NSs possess a potential for optoelectronic applications of field emitters. (C) 2014 American Vacuum Society.

}, issn = {1071-1023}, doi = {10.1116/1.4904970}, author = {Joshi, Padmashree D. and Joag, Dilip S. and Rout, Chandra Shekhar and Late, Dattatray J.} } @article { ISI:000362436800013, title = {Pt-nanoparticle functionalized carbon nano-onions for ultra-high energy supercapacitors and enhanced field emission behaviour}, journal = {RSC Advances}, volume = {5}, number = {99}, year = {2015}, month = {SEP}, pages = {80990-80997}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

In the present work, we have investigated the charge storage capacitive response and field emission behaviour of platinum (Pt) nanoparticles decorated on carbon nano onions (CNOs) and compared them with those of pristine carbon nano onions. The specific capacitance observed for Pt-CNOs is 342.5 F g(-1), about six times higher than that of pristine CNOs, at a scan rate of 100 mV s(-1). The decoration with Pt nanoparticles, without any binder or polymer separator on the CNO, leading to enhanced supercapacitance is due to easy accessibility of Na2SO4 electrolyte in the active material. The Density Functional Theory (DFT) calculations of these systems reveal enhancement in the Density of States (DOS) near the Fermi energy (E-F) on account of platinum decoration on the CNOs. Furthermore, the field emission current density of similar to 0.63 mA cm(-2) has been achieved from the Pt-CNOs emitter at an applied electric field of similar to 4.5 V mu m(-1) and from the pristine CNOs sample current density of similar to 0.4 mA cm(-2) has been achieved at an applied electric field of similar to 6.6 V mu m(-1). The observed enhanced field emission behavior has been attributed to the improved electrical conductivity and increased emitting sites of the Pt-CNO emitter. The field emission current stability of the Pt-CNO emitter over a longer duration is found to be good. The observed results imply multifunctional potential of Pt-CNOs, as supercapacitor material in various next generation hybrid energy storage devices, and field emitters for next generation vacuum nano/microelectronic devices.

}, issn = {2046-2069}, doi = {10.1039/c5ra12364j}, author = {Suryawanshi, Sachin R. and Kaware, Vaibhav and Chakravarty, Disha and Walke, Pravin S. and More, Mahendra A. and Joshi, Kavita and Rout, Chandra Sekhar and Late, Dattatray J.} } @article {42925, title = {Rapid characterization of oxidative deterioration in edible oil by optical photospectrometry}, journal = {Journal of Food and Dairy Technology}, volume = {3}, year = {2015}, month = {APR}, abstract = {

This research work aimed to investigate the kinetic reaction of reused cooking oil and find the optimum conditions of its process. The feedstock was collected from the commercially available sunflower oil. Our investigation shows that the kinetic reaction of reused sunflower oil (auto-oxidation) obtained in terms of variation of absorption coefficient of unexposed sunflower as 0.05 while the exposed sunflower had 0.075. The optimum condition from optical absorption spectroscopy investigations were obtained as 0.267 for unexposed sunflower oil and 0.194 for exposed sunflower oil at room temperature. Furthermore, our FTIR spectroscopic results obtained are accurate and precise enough for such detection such as free fatty acid (FFA ~ 26\%), acid ~ 53\% and saponification ~ 192\% get reduce in exposed oil was investigated.

}, author = {More, Pravin S. and Shelke, Anil V. and Late, Dattatray J.} } @article { ISI:000359234100003, title = {Recent developments in 2D layered inorganic nanomaterials for sensing}, journal = {Nanoscale}, volume = {7}, number = {32}, year = {2015}, month = {JUN}, pages = {13293-13312}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Two dimensional layered inorganic nanomaterials (2D-LINs) have recently attracted huge interest because of their unique thickness dependent physical and chemical properties and potential technological applications. The properties of these layered materials can be tuned via both physical and chemical processes. Some 2D layered inorganic nanomaterials like MoS2, WS2 and SnS2 have been recently developed and employed in various applications, including new sensors because of their layer-dependent electrical properties. This article presents a comprehensive overview of recent developments in the application of 2D layered inorganic nanomaterials as sensors. Some of the salient features of 2D materials for different sensing applications are discussed, including gas sensing, electrochemical sensing, SERS and biosensing, SERS sensing and photodetection. The working principles of the sensors are also discussed together with examples.

}, issn = {2040-3364}, doi = {10.1039/c5nr03633j}, author = {Kannan, Padmanathan Karthick and Late, Dattatray J. and Morgan, Hywel and Rout, Chandra Sekhar} } @article { ISI:000360025100006, title = {Reduction of graphene oxide by 100 MeV Au ion irradiation and its application as H2O2 sensor}, journal = {Journal of Physics D-Applied Physics}, volume = {48}, number = {36}, year = {2015}, month = {SEP}, pages = {365105}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

Graphene oxide (GO) synthesized from a modified Hummer{\textquoteright}s method was reduced (referred, rGO) by using 100 MeV Au ion species and its response to the sense H2O2 was investigated. The changes in the atomic composition and structural properties of rGO after irradiation were studied using x-ray diffraction, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy. These results suggested that the removal of the oxygen-containing functional groups and the improvement of the electrochemical performance of reduced graphene oxide (rGO) after ion irradiation. Raman spectroscopic results revealed the increase in the disorder parameter (I-D/I-G) after Au ion irradiation and also the formation of a large number of small sp(2) domains due to the electronic energy loss of ion beam. The resultant rGO was investigated for H2O2 sensing using electrochemical techniques and it showed a good response.

}, keywords = {electronic energy loss, GO, ion beam irradiation, reduction}, issn = {0022-3727}, doi = {10.1088/0022-3727/48/36/365105}, author = {Hareesh, K. and Joshi, R. P. and Shateesh, B. and Asokan, K. and Kanjilal, D. and Late, Dattatray J. and Dahiwale, S. S. and Bhoraskar, Vasant N. and Haram, Santosh K. and Dhole, Sanjay D.} } @article {42923, title = {Single-layer graphene doping through molecular interaction: field-effect transistor and atomic force microscopy investigations}, journal = {Advanced Device Materials}, volume = {1}, year = {2015}, month = {MAR}, pages = {52-58 }, abstract = {

The single-layer graphene has attracted considerable attention for the promising applications in new generation nanoelectronics and optoelectronics devices because of the high deal carrier mobility. Present investigations deal with the effect of chemical/molecular doping with varying the concentration of strong electron acceptor molecule such as tetracyanoethylene (TCNE) on transfer characteristics of single-layer graphene transistor. The Dirac point shift toward the positive gate voltage as a function of increasing concentration of TCNE molecules clearly indicates that the graphene is P-type doped. Our results indicate that the fermi energy level can be controlled by the amount of molecular doping in order to obtain graphene transistors with tunable Dirac points, which can be easily configured into functional nanoelectronic devices.

}, doi = {10.1179/2055031615Y.0000000003}, author = {Late, Dattatray J.} } @article { ISI:000348455100007, title = {Spectral analysis of the emission current noise exhibited by few layer WS2 nanosheets emitter}, journal = {Ultramicroscopy}, volume = {149}, year = {2015}, month = {FEB}, pages = {51-57}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Spectral analysis of the field emission (FE) current fluctuations has been carried out at the base pressure similar to 1 x 10(-8) mbar. The emission current stability investigated at preset value of 2 mu A is characterized by {\textquoteleft}step like fluctuation. The spectral analysis performed on a FFT (Fast Fourier Transform) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha as similar to 1.05. The estimated value of alpha implies that the current fluctuations are mainly due the various processes occurring on atomic scale like adsorption, migration, and/or desorption of the residual gas species on the emitter surface. (C) 2014 Elsevier B.V. All rights reserved.

}, keywords = {Current fluctuations, field emission, Noise, WS2 nanosheets}, issn = {0304-3991}, doi = {10.1016/j.ultramic.2014.10.004}, author = {Suryawanshi, Sachin R. and Kolhe, Pankaj S. and Rout, Chandra S. and Late, Dattatray J. and More, Mahendra A.} } @article { ISI:000354067400001, title = {Stable field emission from layered MoS2 nanosheets in high vacuum and observation of 1/f noise}, journal = {Nanomaterials and Nanotechnology}, volume = {5}, year = {2015}, month = {APR}, pages = {10}, publisher = {INTECH EUROPE}, address = {JANEZA TRDINE 9, RIJEKA, 51000, CROATIA}, abstract = {

Field emission and current noise of hydrothermally synthesized MoS2 nanosheets are investigated in ultra-high-vacuum and industrially suited high-vacuum conditions. The study reveals that the emission turn-on field is pressure dependent. Moreover, the MoS2 nanosheets exhibit more stable field-electron emission in high-vacuum than in ultra-high-vacuum conditions. The investigations on field-emission current fluctuations show features of 1/f-type noise in ultra-high-vacuum and high-vacuum conditions, attributed to adsorption and desorption processes. The post-field-emission results indicate the MoS2 nanosheets are a robust field emitter in high-vacuum conditions.

}, keywords = {Electron emission, layered materials, MoS2, Noise measurement, Raman spectroscopy}, issn = {1847-9804}, doi = {10.5772/60071}, author = {Kashid, Ranjit V. and Joag, Pracheetee D. and Thripuranthaka, M. and Rout, Chandra S. and Late, Dattatray J. and More, Mahendra A.} } @proceedings {42929, title = {Synthesis of GdB6 nanostructures using nanosecond (Nd: YAG) laser: field emission investigation}, year = {2015}, month = {JUL}, pages = {122-123}, publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA}, address = {Guangzhou, Peoples R China}, abstract = {

We herein report field emission characteristics of GdB6 nanostructures grown directly on a pellet via laser processing (laser fluence similar to 6 J/cm(2)). The laser processed GdB6 pellet was characterized by X-ray diffraction, which revealed no change in phase upon laser processing. The values of the turn-on field required to draw emission current density of 1 mu A/cm(2) is found to be similar to 2.95 V/mu m, for the laser processed GdB6 emitter. Furthermore, the Fowler-Nordheim (F-N) plot exhibits non-linear behavior over the entire range of applied field and the field enhancement factor (beta) calculated from slope of the F-N plot (low field region) was found to be similar to 543. The emission current stability over a period of 3h was observed to be fairly good. The observed results demonstrate that laser processing can be efficiently used to make GdB6 nanostructure emitter having potential for practical applications.

}, author = {Suryawanshi, S. R. and Late, Dattatray J. and More, Mahendra A. and Singh, Anil K. and Sinha, S.} } @article { ISI:000351420300028, title = {Temperature dependent phonon shifts in few-layer black phosphorus}, journal = {ACS Applied Materials \& Interfaces}, volume = {7}, number = {10}, year = {2015}, month = {MAR}, pages = {5857-5862}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

Atomically thin two-dimensional (2D) sheets of black phosphorus have attracted much attention due to their potential for future nanoelectronic and photonics device applications. Present investigations deal with the temperature dependent phonon shifts in a few-layer black phosphorus nanosheet sample prepared using micromechanical exfoliation on a 300 nm SiO2/Si substrate. The temperature dependent Raman spectroscopy experiments were carried out on a few-layer black phosphorus sample, which depicts softening of Ag-1 B-2g, and A(g)(2) modes as temperature increases from 77 to 673 K. The calculated temperature coefficients for Ag-1, B-2g, and A(g)(2) modes of the few-layer black phosphorus nanosheet sample were observed to be -0.01, -0.013, and -0.014 cm(-1) K-1, respectively. The temperature dependent softening modes of black phosphorus results were explained on the basis of a double resonance process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other promising and emerging 2D ultrathin layer and heterostructured materials.

}, keywords = {black phosphorus, layered materials, phonon vibrations, Raman spectroscopy, thermal effect}, issn = {1944-8244}, doi = {10.1021/am509056b}, author = {Late, Dattatray J.} } @article { ISI:000364355500044, title = {Temperature-dependent raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets}, journal = {ACS Applied Materials \& Interfaces}, volume = {7}, number = {43}, year = {2015}, month = {NOV}, pages = {24185-24190}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community because it presents a direct bandgap of similar to 1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm(2) V-1 s(-1). However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction that can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature-dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 to 570 K due to anharmonic vibrations of the lattice, which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors, such as MoS2, MoSe2, WSe2, and black phosphorus (BP). This marked temperature dependence of the Raman spectra could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a noninvasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to lower interlayer coupling in the nanosheets.

}, keywords = {2D semiconductors, layered materials, Raman spectroscopy, thermal effect, TiS3 nanoribbons, TiS3 nanosheets}, issn = {1944-8244}, doi = {10.1021/acsami.5b07492}, author = {Pawbake, Amit S. and Island, Joshua O. and Flores, Eduardo and Ramon Ares, Jose and Sanchez, Carlos and Ferrer, Isabel J. and Jadkar, Sandesh R. and van der Zant, Herre S. J. and Castellanos-Gomez, Andres and Late, Dattatray J.} } @proceedings {42928, title = {Transition metal di-chalcogenides and their nanocomposite prospective field emitters}, year = {2015}, month = {JUL}, pages = {98-99}, publisher = {IEEE, 345 E 47th ST, New York, NY 10017 USA}, address = {Guangzhou, Peoples R China}, abstract = {

Layered structured transition metal di-chalcogenides has attracted researchers as a substitute of graphene and its forms for various applications. In an attempt to explore field emission properties of these graphene analogues, synthesis and field emission behaviour of a few layered transition metal di-chalcogenides (TMDs) VS2, MoS2, MoO3 have been investigated at a base pressure of 1x 10(-8) mbar. Furthermore, to improve the field emission properties, composites with RGO and respective oxides were synthesized and compared with the pristine ones. The TMDs and their composites is synthesized employing hydrothermal synthesis route. The preliminary results show that these TMD{\textquoteright}s and their composites, when synthesized in a controlled manner, can serve as potential field emitters for future field emission based devices.

}, author = {Khare, Ruchita T. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000363417900029, title = {Ultra-thin V2O5 nanosheet based humidity sensor, photodetector and its enhanced field emission properties}, journal = {RSC Advances}, volume = {5}, number = {108}, year = {2015}, month = {OCT}, pages = {88796-88804}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

We report the synthesis of V2O5 nanosheets by a simple hydrothermal method. The as synthesized V2O5 nanosheets were characterized by Raman spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Transmission Electron Microscopy (TEM) and UV-Vis spectroscopy. The humidity sensing behaviors were investigated in the range of 11-97\% relative humidity (RH) at room temperature. The maximum sensitivity of 45.3\%, response time of similar to 4 min and recovery time of similar to 5 min were observed for the V2O5 nanosheet based sensor. We also demonstrated the V2O5 nanosheets as an ultra-violet photodetector with a sensing response time of similar to 65 s and recovery time of similar to 75 s with a maximum photoresponsivity of similar to 6.2\%. Further, we have also carried out field emission (FE) investigations of V2O5 nanosheets under a planar {\textquoteleft}{\textquoteleft}Diode{\textquoteright}{\textquoteright} assembly in an ultrahigh vacuum (UHV) chamber at a base pressure of similar to 1 x 10(-8) mbar. The turn on fields required to draw field emission current densities of 1 mu A cm(-2) and 10 mu A cm(-2) are found to be 1.15 V mu m(-1) and 1.72 V mu m(-1), respectively. We achieved a maximum field emission current density of 1.532 mA cm(-2) at an applied electric field of 3.2 V mu m(-1). The field enhancement factors calculated from the slope of the Fowler-Nordheim (F-N) plot are found to be 8530 and 3530 at low field and high field regions, respectively. Our results open up several avenues towards the successful utilization of V2O5 nanosheets and other metal oxide nanosheets for various nanoelectronics device applications including sensors, photodetector and flat panel displays.

}, issn = {2046-2069}, doi = {10.1039/c5ra17253e}, author = {Pawar, Mahendra S. and Bankar, Prashant K. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000359136500056, title = {Vapour-liquid-solid growth of one-dimensional In2Se3 nanostructures and their promising field emission behaviour}, journal = {RSC Advances}, volume = {5}, number = {80}, year = {2015}, month = {JUL}, pages = {65274-65282}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Single crystalline ultra long In2Se3 nanowires have been grown by employing a single step facile thermal evaporation route under optimized conditions on Au/Si wafers, and morphology dependent field emission investigations on the In2Se3 nanostructure at the base pressure -1 x 10(-8) mbar are explored. In addition, structural and morphological analysis of as-synthesized In2Se3 nanostructures has been carried out using XRD, SEM and TEM. A plausible explanation of the vapor-solid-liquid (VLS) growth mechanism based on the experimental results and reported literature has been presented. Furthermore, field emission measurements demonstrate remarkably enhanced emission behaviour, which is explained on the basis of the field enhancement factor and aspect ratio of the nanostructures. The synthesized In25e3 nanowire emitter delivers a very high current density of -1.2 mA cm(-2) at an applied electric field of -6.33 cm(-1). The present results demonstrate In2Se3 as an important candidate for potential applications in nano/micro-electronic devices.

}, issn = {2046-2069}, doi = {10.1039/c5ra10160c}, author = {Suryawanshi, Sachin R. and Bankar, Prashant K. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000373421700065, title = {Architecture of 2D MoS2 nanosheets and 3D CdMoS4 marigold flowers: consequence of annealing on field emission performance}, journal = {Microporous and Mesoporous Materials}, volume = {225}, year = {2016}, month = {MAY}, pages = {573-579}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Herein, we report the field electron emission investigations on template free solvothermally synthesized layered MoS2 nanosheets as well as novel phase of CdMoS4 nanoflowers at the base pressure of similar to 1 x 10(-8) mbar. The turn-on field, threshold field and maximum emission current densities for both MoS2 and CdMoS4 are strongly influenced by thermal annealing in inert atmosphere. The turn on field, required to draw emission current density of 1 mu A/cm(2) is found to be 5.8 and 3.2 V/mu m for pristine and annealed MoS2 at 400 degrees C. In case of as prepared and annealed CdMoS4 sample the turn on field values are found to be similar to 6.2 and 5.0 V/mu m, respectively. The emission current versus time (I-t) plot measured at the preset current values of similar to 1 mu A for pristine and annealed sample indicates stable operation of the emitter. The emission current fluctuations for annealed sample are observed to be less as compared with the pristine sample due to conditioning of the emitter, thereby showing highly stable nature of emitter. Thus, the present result demonstrates the potential of annealed MoS2 nanosheets and CdMoS4 nanoflowers as an emerging materials for micro/nanoelectronics and flat panel field emission display applications. (C) 2016 Elsevier Inc. All rights reserved.

}, keywords = {field emission, MoS2 and CdMoS4, Nanoflowers, nanosheets}, issn = {1387-1811}, doi = {10.1016/j.micromeso.2016.01.033}, author = {Kadam, Sunil R. and Suryawanshi, Sachin R. and Panmand, Rajendra P. and Mate, Vivek R. and More, Mahendra A. and Late, Dattatray J. and Kale, Bharat B.} } @article {42910, title = {Classification and study of near-surface region of active material for gas detection using x-ray photoelectron spectroscopy}, journal = {Advanced Materials Letters}, volume = {7}, year = {2016}, month = {JAN}, pages = {330-336}, abstract = {

We report investigations on resistive material SnO2: Cu (9 wt. \%) evaluated and optimized for the application of gas sensor. SnO2: Cu has been thoroughly characterized by using X-ray photoelectron spectroscopy (XPS). The deconvolution of XPS spectra confirms the existing surface reactive species in the form of states of the metal orbital and the presence of multiple pathways for the detection of CO vis-{\`a}-vis sintering temperature effect. Enhanced CO pickup at the sintering temperature of 650 0C (wide range and low sensitivity) and 750 0C (short range and high sensitivity) has been observed. The CO sensing and XPS data correlates well along with the nonconventional use of variation in average XPS background intensity of general scan seems to be related to optimized sensitivity conditions of various gases. Copyright {\textcopyright} 2016 VBRI Press.

}, doi = {10.5185/amlett.2016.6137}, author = {More, Pravin S. and Late, Dattatray J. and Kondawar, Subhash B.} } @article { ISI:000377257000076, title = {Effect of plasma treatment on multilayer graphene: X-ray photoelectron spectroscopy, surface morphology investigations and work function measurements}, journal = {RSC Advances}, volume = {6}, number = {54}, year = {2016}, month = {MAY}, pages = {48843-48850}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

We report here the effect of plasma treatment on multilayer graphene samples as determined by X-ray photoelectron spectroscopy and surface morphology studies with atomic force microscopy, scanning electron microscopy and transmission electron microscopy. The plasma treatment was modified to introduce controlled levels of defects and functionalities to the graphene samples to give tunable properties. The elemental composition and structure were investigated by XPS and micro Raman spectroscopy. The XPS study showed that there was a slight variation in the sp(2)/sp(3) hybridization ratio between the plasma-treated samples and the pristine sample. Kelvin probe measurements were carried out on all the multilayer graphene samples and indicated a slight variation in the work function of the graphene samples after plasma treatment.

}, issn = {2046-2069}, doi = {10.1039/c6ra03046g}, author = {Patil, Urmila V. and Pawbake, Amit S. and Machuno, Luis G. B. and Gelamo, Rogerio V. and Jadkar, Sandesh R. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article { ISI:000377203300030, title = {Electronic structure and properties of layered gallium telluride}, journal = {Chemical Physics Letters}, volume = {651}, year = {2016}, month = {MAY}, pages = {148-154}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.

}, issn = {0009-2614}, doi = {10.1016/j.cplett.2016.03.045}, author = {Shenoy, U. Sandhya and Gupta, Uttam and Narang, Deepa S. and Late, Dattatray J. and Waghmare, Umesh V. and Rao, C. N. R.} } @article { ISI:000377811100004, title = {Enhanced field emission behavior of layered MoSe2}, journal = {Materials Research Express}, volume = {3}, number = {3}, year = {2016}, month = {MAR}, pages = {Article Number: 035003}, publisher = {IOP PUBLISHING LTD}, address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}, abstract = {

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe2 nanosheets with average lateral dimension similar to 60 mu m on 300 nm SiO2/Si and n-type silicon substrates and field emission investigation of MoSe2/Si at the base pressure of similar to 1 x 10(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe2 nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 mu A cm(-2), are found to be similar to 1.9 and similar to 2.3 V mu m(-1), respectively. Interestingly, the MoSe2 nanosheet emitter delivers maximum field emission current density of similar to 1.5 mA cm(-2) at a relatively lower applied electric field of similar to 3.9 V mu m(-1). The long term operational current stability recorded at the preset values of 35 mu A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe2 nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe2 nanosheets emitter can provide prospects for the future development of practical electron sources.

}, keywords = {atomically thin nanosheets, chemical vapor deposition, field emission, layered MoSe2}, issn = {2053-1591}, doi = {10.1088/2053-1591/3/3/035003}, author = {Suryawanshi, Sachin R. and Pawbake, Amit S. and Pawar, Mahendra S. and Jadkar, Sandesh R. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000382207700055, title = {Exfoliated 2D black phosphorus nanosheets: field emission studies}, journal = {Journal of Vacuum Science \& Technology B}, volume = {34}, number = {4}, year = {2016}, month = {JUL}, pages = {041803}, publisher = {A V S AMER INST PHYSICS}, address = {STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA}, abstract = {

A few layer black phosphorus (BP) nanosheets are obtained by micromechanical cleavage from a bulk BP crystal. In a typical exfoliation procedure, a layer of BP is peeled off from bulk crystal with the help of Scotch tape and transferred onto SiO2/Si and pristine Si substrates. The morphological and structural analyses of the samples were carried out using an optical microscopy, a transmission electron microscopy, and a Raman spectroscopy. Field emission investigations on a few layered BP nanosheets on Si substrate were carried out at the base pressure of 1 x 10(-8) mbar. The turn-on value, corresponding to emission current density of similar to 1 mu A/cm(2), is found to be similar to 5.1V/mu m for BP nanosheets/Si emitter and high field enhancement factor (beta) similar to 1164, attributed to atomically thin/sharp edges of the BP nanosheets. The emission current shows good stability at a preset value of similar to 5 mu A over a period of more than 8 h. The present results demonstrate the potential of the mechanically exfoliated BP nanosheets/Si field emitter for the development of practical electron sources. (C) 2016 American Vacuum Society.

}, issn = {1071-1023}, doi = {10.1116/1.4945433}, author = {Suryawanshi, Sachin R. and More, Mahendra A. and Late, Dattatray J.} } @article {43604, title = {Facile approach towards fabrication of GdB6-ZnO heteroarchitecture as high currentdensity cold cathode}, journal = {Chemistryselect}, volume = {1}, year = {2016}, month = {AUG}, pages = {3723-3729}, abstract = {Three dimensional (3D) GdB6-ZnO heteroarchitecture comprised of thin coating of GdB6 on self aligned ZnO urchins with pointed apex has been synthesized employing optimized Pulsed Laser Deposition (PLD) technique. The self aligned ZnO urchins on Zn substrate were obtained using hydrothermal route. The as-synthesized GdB6-ZnO heteroarchitecture was characterized using XRD, SEM, TEM XPS, and UPS in order to reveal its structural, morphological, chemical, and electronic properties. Interestingly, the GdB6-ZnO heteroarchitecture exhibits superior field emission (FE) behviour in contrast to the pristine ZnO urchins envisaged by extraction of very high emission current density of similar to 4.6 mA/cm(2) at an applied field of similar to 4.5 V/mm, against similar to 1.5 mA/cm(2) at an applied field of similar to 5.6 V/mm from the pristine ZnO urchins emitter. Furthermore, the GdB6-ZnOemitter exhibits good emission stability at pre-set value of similar to 5 mA over duration of more than 3 hours. The superior FE behaviour of the GdB6-ZnO is attributed to low work-function of GdB6 and presence of nanometric protrusions on the emitter surface, further enhancing the aspect ratio provided by the ZnO urchins. The present results demonstrate a facile approach towards fabrication of high current density cold cathodes due to rare earth hexaborides via designing hetero-architectures comprised of their well adherent ultrathin coating on high aspect ratio metal oxide nanostructures.}, doi = {10.1002/slct.201600956}, author = {Suryawanshi, Sachin R. and Mistari, Chetan D. and Singh, Anil K. and Phase, Deodatta M. and Late, Dattatray J. and Sinha, Sucharita and More, Mahendra A.} } @article { ISI:000369516100068, title = {Field emission properties of highly ordered low-aspect ratio carbon nanocup arrays}, journal = {RSC Advances}, volume = {6}, number = {12}, year = {2016}, month = {JAN}, pages = {9932-9939}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Herein, we design and develop a field emission device utilizing highly porous carbon nanocup (CNC) films. These three-dimensional (3D) low-aspect ratio CNC structures were fabricated by a combination of anodization and chemical vapor deposition techniques. The low turn-on fields of 2.30 V mu m(-1) were observed to draw an emission current density of 1 mu A cm(-2) and a maximum emission current density of similar to 1.802 mA cm(-2) drawn at an applied field of similar to 4.20 V mu m(-1). The enhanced field emission behavior observed from the CNC films is attributed to an excellent field enhancement factor of 1645. The observed field emission properties of CNC arrays are attributed to a synergistic combination of high aspect ratio, nano-sized radius of curvature, highly organized distribution of the emitters over the whole area of specimen and lower screening effect of the CNC arrays. These observations shed light on the effect of the stacking carbon layers of CNC on their electronic properties and open up possibilities to integrate new morphologies of graphitic carbon in nanotechnology applications. Thus, the low turn on field, high emission current density and better emission current stability enable CNC based future field emission applications.

}, issn = {2046-2069}, doi = {10.1039/c5ra25682h}, author = {Gupta, Bipin Kumar and Kedawat, Garima and Kumar, Pawan and Singh, Satbir and Suryawanshi, Sachin R. and Agrawal, Neetu and Gupta, Govind and Kim, Ah Ra and Gupta, R. K. and More, Mahendra A. and Late, Dattatray J. and Hahm, Myung Gwan} } @article { ISI:000373029500086, title = {Glucose sensing and low-threshold field emission from MnCo2O4 nanosheets}, journal = {RSC Advances}, volume = {6}, number = {35}, year = {2016}, month = {MAR}, pages = {29734-29740}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Manganese cobalt oxide (MnCo2O4) nanosheets were grown on nickel (Ni) foam by a simple electrodeposition method. The as-synthesized nanosheets were characterized using X-ray diffraction and scanning electron microscopy. The Ni foam supports the growth of MnCo2O4 nanosheets without any aggregation, thereby increasing its catalytic and electronic properties. The electrochemical studies show that MnCo2O4 exhibits excellent electrocatalytic activity towards glucose sensing applications. The MnCo2O4 based glucose sensor shows a good sensitivity value of 8.2 mA mM(-1) cm(-2), with a response time of 19 s. In addition to this, field emission studies of as-synthesized MnCo2O4 reveal a low turn-on field value of 1.9 V mm(-1) and good emission current stability, demonstrating MnCo2O4 nanosheets as a good field emitter material.

}, issn = {2046-2069}, doi = {10.1039/c6ra01169a}, author = {Naik, Kusha Kumar and Khare, Ruchita T. and More, Mahendra A. and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {43585, title = {High performance humidity sensor and photodetector based on SnSe nanorods}, journal = {Materials Research Express}, volume = {3}, year = {2016}, month = {OCT}, pages = {Article Number: 105038}, abstract = {Tin selenide (SnSe) nanorods were synthesized using a. one-step solvothermal route and. their. humidity sensing and photodetection performance at room temperature were investigated. The results depict. that SnSe nanorod-based humidity and photosensors have. good long-term stability, are. highly sensitive and have. fast response and recovery times. In the. case of the. humidity sensor it was observed that the resistance of the films decreased. with increasing relative humidity (RH). The humidity sensing behaviors were investigated in the range. 11-97\% RHat room temperature. A. response time of similar to 68 s and recovery time of similar to 149 s were observed for. the humidity sensor. The photosensing behavior showed. typical response/recovery times of similar to 3 s with highly reproducible behavior.}, doi = {10.1088/2053-1591/3/10/105038}, author = {Pawbake, Amit S. and Jadkar, Sandesh R. and Late, Dattatray J.} } @article { ISI:000370211400055, title = {Highly transparent wafer-scale synthesis of crystalline WS2 nanoparticle thin film for photodetector and humidity-sensing applications}, journal = {ACS Applied Materials \& Interfaces}, volume = {8}, number = {5}, year = {2016}, month = {FEB}, pages = {3359-3365}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E12g and A1g at similar to 356 and similar to 420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469\% along with response time of similar to 12 s and recovery time of similar to 13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of similar to 51 s and recovery time of similar to 88 s were observed with sensitivity similar to 137\% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

}, keywords = {chemical vapor deposition, humidity sensor, nanoparticle, photosensor, thin film, tungsten disulfide}, issn = {1944-8244}, doi = {10.1021/acsami.5b11325}, author = {Pawbake, Amit S. and Waykar, Ravindra G. and Late, Dattatray J. and Jadkar, Sandesh R.} } @article { ISI:000375521000042, title = {Humidity sensing and photodetection behavior of electrochemically exfoliated atomically thin-layered black phosphorus nanosheets}, journal = {ACS Applied Materials \& Interfaces}, volume = {8}, number = {18}, year = {2016}, month = {MAY}, pages = {11548-11556}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {

Recent investigations on two-dimensional black phosphorus material mainly highlight work on few atomic layers and multilayers. It is still unknown if the black phosphorus atomically thin sheet is an ideal structure for the enhanced gas solid interactions due to its large surface area. To further investigate this concern, we have synthesized few atomic layer thick nanosheets of black phosphorus using an electrochemical exfoliation method. The surface morphology and thickness of the nanosheet were identified using AFM, TEM, and Raman spectroscopy. The black phosphorus nanosheet thick film device was used for the gas sensing application with exposure to different humidites. Further, the few layer black phosphorus nanosheet based transistor shows good mobility and on/off ratio. The UV light irradiation on the black phosphorus nanosheet shows good response time. The overall results show that the few layer thick film of black phosphorus nanosheets sample exhibits creditable sensitivity and better recovery time to be used in humidity sensor and photodetector applications.

}, keywords = {black phosphorus, electrochemical exfoliation, humidity sensor, photodetector}, issn = {1944-8244}, doi = {10.1021/acsami.5b10247}, author = {Erande, Manisha B. and Pawar, Mahendra S. and Late, Dattatray J.} } @article {42908, title = {In situ fabrication of highly crystalline CdS decorated Bi2S3 nanowires (nano-heterostructure) for visible light photocatalyst application}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {FEB}, pages = {23508-23517}, abstract = {

In situ synthesis of the orthorhombic Bi2S3 nanowires decorated with hexagonal CdS nanoparticles (nano-heterostructure) has been demonstrated by a facile solvothermal method. The tiny 5-7 nm CdS spherical nanoparticles are decorated on the surfaces of 30-40 nm Bi2S3 nanowires, successfully. Structural, morphological and optical studies clearly show the existence of CdS on the nanowires. A possible sequential deposition growth mechanism is proposed on the basis of experimental results to reveal the formation of the nano heterostructure. The heterostructures have been used as a photocatalyst for hydrogen production as well as degradation of methylene blue under solar light. The maximum hydrogen evolution i.e. 4560 and 2340 mu mol h(-1) 0.5 g was obtained from H2S splitting and glycerol degradation for Bi2S3 NWs decorated with CdS nanoparticles (nano-heterostructure) which is higher than that of the Bi2S3 NWs (3000 and 1170 mu mol h(-1) 0.5 g, respectively). The enhanced photocatalytical hydrogen evolution efficiency of the heterostructures is mainly attributed to its nanostructure. In the nano heterostructure, the CdS nanoparticles control the charge carrier transition, recombination, and separation, while the Bi2S3 nanowire serves as a support for the CdS nanoparticles. The photogenerated electron{\textquoteright}s migration is faster than the holes from the inside of a CdS nanoparticle to its surface or to the phase interface, resulting in a relatively higher hole density inside the CdS nanoparticle leaving electron density at surface of the Bi2S3 NWs. This influences the photocatalytic activity under solar light. Such nano-heterostructures may have potential in other photocatalytic reactions.

}, author = {Panmand, Rajendra P. and Sethi, Yogesh A. and Deokar, Rajashree S. and Late, Dattatray J. and Gholap, Haribhau M. and Baeg, Jin-Ook and Kale, Bharat B.} } @article { ISI:000369591400061, title = {Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies}, journal = {Nanoscale}, volume = {8}, number = {5}, year = {2016}, month = {JAN}, pages = {3008-3018}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

We investigate the growth mechanism and temperature dependent Raman spectroscopy of chemical vapor deposited large area monolayer of MoS2, MoSe2, WS2 and WSe2 nanosheets up to 70 mu m in lateral size. Further, our temperature dependent Raman spectroscopy investigation shows that softening of Raman modes as temperature increases from 80 K to 593 K is due to the negative temperature coefficient and anharmonicity. The temperature dependent softening modes of chemical vapor deposited mono-layers of all TMDCs were explained on the basis of a double resonance phonon process which is more active in an atomically thin sample. This process can also be fundamentally pertinent in other emerging two-dimensional layered and heterostructured materials.

}, issn = {2040-3364}, doi = {10.1039/c5nr07401k}, author = {Pawbake, Amit S. and Pawar, Mahendra S. and Jadkar, Sandesh R. and Late, Dattatray J.} } @article {43625, title = {Laser exfoliation of 2D black phosphorus nanosheets and their application as a field emitter}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {NOV}, pages = {112103-112108}, abstract = {Highly crystalline two dimensional (2D) few layered black phosphorus (BP) nanosheets have been synthesized via a one step facile laser irradiation technique under optimized experimental conditions. The field emission investigations on the few layered black phosphorus nanosheets were carried out at the base pressure 1 x 10(-8) mbar. The morphological, elemental, optical, and structural analysis of the as-synthesized black phosphorus sample was carried out using SEM, AFM, EDAX, TEM, and Raman spectroscopy. The turn-on values of the BP nanosheets emitter were found to be significantly lower than that of earlier reports of BP nanosheets, graphene, and carbon nanotubes based field emitters due to the high field enhancement factor (beta) similar to 2986 associated with atomically thin/sharp edges of the BP nanosheets emitter. The emission current versus time plot depicts the good emission current stability with a pre-set value of 1 mu A for similar to 5 h duration. Our facile synthesis approach and the robust field emitter nature of the BP nanosheets makes them a potential candidate for a practical electron source in vacuum micro/nanoelectronic devices.}, doi = {10.1039/c6ra24526a}, author = {Suryawanshi, Sachin R. and More, Mahendra A. and Late, Dattatray J.} } @article { ISI:000373421700057, title = {Liquid exfoliation of black phosphorus nanosheets and its application as humidity sensor}, journal = {Microporous and Mesoporous Materials}, volume = {225}, year = {2016}, month = {MAY}, pages = {494-503}, publisher = {ELSEVIER SCIENCE BV}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, abstract = {

The bulk crystal of black phosphorus was exfoliated by liquid exfoliation method for a duration of 8 h using N-Methyl-2-Pyrrolidone as the solvent. The exfoliated sample was centrifuged at different rpm such as 3000, 5000 and 10,000 to separate out the 2D black phosphorus nanosheets with different thickness and length. The as synthesized black phosphorus nanosheets collected at these rpm values were characterized with TEM, AFM, Raman spectroscopy and Vis-NIR spectroscopy. Further, we investigated the humidity sensing behaviour of the devices fabricated by using these samples. The results obtained show that the device fabricated with black phosphorus nanosheets and nanoparticles obtained by filtration of the sample collected after 10,000 rpm exhibited better performance as compared to the nanosheets collected at 3000 and 5000 rpm. The response and recovery times of devices are found to be promising and better than those of the black phosphorus gas sensor reported earlier. The present investigations open up a new avenue for further studies in improving the performance of black phosphorus nanosheets based gas sensing devices. (C) 2016 Elsevier Inc. All rights reserved.

}, keywords = {black phosphorus, Humidity sensors, Liquid exfoliation, nanosheets}, issn = {1387-1811}, doi = {10.1016/j.micromeso.2016.01.031}, author = {Late, Dattatray J.} } @article { ISI:000369603400025, title = {Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets}, journal = {Journal of Materials Chemistry C}, volume = {4}, number = {5}, year = {2016}, month = {DEC}, pages = {1096-1103}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic and optoelectronic devices. Here, we present the spectral analysis and photo-enhanced field emission studies of a layered intergrowth PbBi2Se4 nanosheet emitter, performed at the base pressure of similar to 1 x 10(-8) mbar. The emitter shows a turn-on field value of similar to 4.80 V mu m(-1), corresponding to an emission current density of similar to 1 mu A cm(-2). Interestingly, when the cathode was illuminated with visible light, it exhibited a lower turn-on field of B3.90 V mm(-1), and a maximum emission current density of similar to 893 mu A cm(-2) has been drawn at an applied electric field of similar to 8.40 V mu m(-1). Furthermore, the photo-enhanced emission current showed reproducible, step-like switching behavior in synchronous with ON-OFF switching of the illumination source. The emission current-time plots reveal excellent stability over a duration of similar to 6 h. Low-frequency noise is a significant limitation for the performance of nanoscale electronic devices. The spectral analysis performed on a Fast Fourier Transform (FFT) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha similar to 0.99. The low frequency noise, photo-enhanced field emission, and reproducible switching behavior characterized with very fast rise and fall times propose the layered PbBi2Se4 nanosheet emitter as a new promising candidate for novel vacuum nano-optoelectronic devices.

}, issn = {2050-7526}, doi = {10.1039/c5tc02993g}, author = {Suryawanshi, Sachin R. and Guin, Satya N. and Chatterjee, Arindom and Kashid, Vikas and More, Mahendra A. and Late, Dattatray J. and Biswas, Kanishka} } @article {42913, title = {Low turn-on field and high field emission current density from Ag/TiO 2 nanocomposite}, journal = {Chemical Physics Letters}, volume = {657}, year = {2016}, month = {JUL}, pages = {167{\textendash}171}, abstract = {

High current density of 1.24 mA/cm2 was drawn at an applied field of 4.4 V/μm from Ag/TiO2 nanocomposite. Also the turn-on field has been reduced from 3.9 V/μm to 2.7 V/μm for the emission current density of 10 μA/cm2. Ag/TiO2 nanocomposite was synthesized by using UV-switchable reducing agent. TiO2 nanotube wall was decorated by Ag nanoparticles with average diameter of 17 nm. To the best of our knowledge this is the first report on the field emission studies of Ag/TiO2 nanocomposite. Simple synthesis route coupled with superior field emission properties indicate the possible use of Ag/TiO2 nanocomposite for micro/nanoelectronic devices.

}, doi = {10.1016/j.cplett.2016.06.003}, author = {Patil, Girish P. and Deore, Amol B. and Bagal, Vivekanand S. and Late, Dattatray J. and More, Mahendra A. and Chavan, Padmakar G.} } @article { ISI:000375445700073, title = {Observation of enhanced field emission properties of Au/TiO2 nanocomposite}, journal = {Applied Physics A-Materials Science \& Processing}, volume = {122}, number = {5}, year = {2016}, month = {MAY}, pages = {560}, publisher = {SPRINGER}, address = {233 SPRING ST, NEW YORK, NY 10013 USA}, abstract = {

Simple and low-cost method of thermal annealing was used to decorate Gold (Au) nanoparticles on aligned TiO2 nanotubes. The aligned TiO2 nanotubes were decorated by Au nanoparticles with an average diameter of 9, 18 and 28 nm (aligned TiO2 nanotubes referred as specimen A and TiO2 nanotubes decorated by Au nanoparticles with average diameter of 9, 18 and 28 nm are referred as specimen B, C and D, respectively). The detailed characterization such as structural, morphological and elemental analysis of TiO2 and Au/TiO2 nanocomposite have been carried out using X-ray diffraction, field emission scanning electron microscope, transmission electron microscope, X-ray photoelectron spectroscopy and Raman spectroscopy. Furthermore, the meticulous comparative field emission characteristics of the aligned TiO2 nanotubes and Au/TiO2 nanocomposite have been performed. The turn-on field defined for the current density of 10 mu A/cm(2) has been found to be 3.9, 2.8, 3.2 and 3.7 V/mu m for specimen A, B, C and D, respectively. The observed low turn-on field of specimen B has been found to be superior than the other semiconducting nanocomposites reported in the literature. The emission current stability over a period of 3 h is found to be better for all the specimens. To the best of our knowledge, a systematic field emission study of Au/TiO2 nanocomposite has not been explored. The observed superior field emission study of Au/TiO2 nanocomposite indicates their possible use in micro/nanoelectronic devices.

}, issn = {0947-8396}, doi = {10.1007/s00339-016-0090-z}, author = {Patil, Girish P. and Bagal, Vivekanand S. and Suryawanshi, Sachin R. and Late, Dattatray J. and More, Mahendra A. and Chavan, Padmakar G.} } @article {43590, title = {Pulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters}, journal = {Applied Physics A-Materials Science \& Processing}, volume = {122}, year = {2016}, month = {OCT}, pages = {Article Number: 899}, abstract = {Gadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure similar to 10(-8) mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of similar to 1.4 and 0.811 mA/cm(2) at an applied field of similar to 6.0 and 7.0 V/mu m, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (beta) estimated using the slopes of the F-N plots indicate that the PLD GdB6 coating on Wand Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, similar to 1.6 +/- 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.}, doi = {10.1007/s00339-016-0423-y}, author = {Suryawanshi, Sachin R. and Singh, Anil K. and Phase, Deodatta M. and Late, Dattatray J. and Sinha, Sucharita and More, Mahendra A.} } @conference {45824, title = {Single SnO2 Nanowire: field emission investigations}, booktitle = {2016 29th International Vacuum Nanoelectronics Conference (IVNC)}, year = {2016}, month = {JUL}, publisher = {IEEE, 345 E 47th St, New York, NY 10017 USA}, organization = {IEEE, 345 E 47th St, New York, NY 10017 USA}, address = {345 E 47th St, New York, NY 10017 USA}, abstract = {

The present work deals with the field emission study on multiple SnO2 nanowires synthesized by simple thermal evaporation method. For the realistic analysis of the Fowler Nordheim plot of the semiconducting SnO2, field emission behavior of a single nanowire is studied. A relevant model explaining the field emission mechanism from the single SnO2 nanowire is also proposed by the authors.

}, keywords = {SnO2 nanowire}, isbn = {978-1-5090-2419-3}, author = {Joshi, D. and Joag, Dilip S. and Mulla, Imtiaz S. and Late, Dattatray J.} } @article { ISI:000372253200047, title = {Situ fabrication of highly crystalline CdS decorated Bi2S3 nanowires (nano-heterostructure) for visible light photocatalyst application}, journal = {RSC Advances}, volume = {6}, number = {28}, year = {2016}, month = {FEB}, pages = {23508-23517}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

In situ synthesis of the orthorhombic Bi2S3 nanowires decorated with hexagonal CdS nanoparticles (nano-heterostructure) has been demonstrated by a facile solvothermal method. The tiny 5-7 nm CdS spherical nanoparticles are decorated on the surfaces of 30-40 nm Bi2S3 nanowires, successfully. Structural, morphological and optical studies clearly show the existence of CdS on the nanowires. A possible sequential deposition growth mechanism is proposed on the basis of experimental results to reveal the formation of the nano heterostructure. The heterostructures have been used as a photocatalyst for hydrogen production as well as degradation of methylene blue under solar light. The maximum hydrogen evolution i.e. 4560 and 2340 mu mol h(-1) 0.5 g was obtained from H2S splitting and glycerol degradation for Bi2S3 NWs decorated with CdS nanoparticles (nano-heterostructure) which is higher than that of the Bi2S3 NWs (3000 and 1170 mu mol h(-1) 0.5 g, respectively). The enhanced photocatalytical hydrogen evolution efficiency of the heterostructures is mainly attributed to its nanostructure. In the nano heterostructure, the CdS nanoparticles control the charge carrier transition, recombination, and separation, while the Bi2S3 nanowire serves as a support for the CdS nanoparticles. The photogenerated electron{\textquoteright}s migration is faster than the holes from the inside of a CdS nanoparticle to its surface or to the phase interface, resulting in a relatively higher hole density inside the CdS nanoparticle leaving electron density at surface of the Bi2S3 NWs. This influences the photocatalytic activity under solar light. Such nano-heterostructures may have potential in other photocatalytic reactions.

}, issn = {2046-2069}, doi = {10.1039/c6ra01488g}, author = {Panmand, Rajendra P. and Sethi, Yogesh A. and Deokar, Rajashree S. and Late, Dattatray J. and Gholap, Haribhau M. and Baeg, Jin-Ook and Kale, Bharat B.} } @article {43629, title = {SnS2 nanoflakes for efficient humidity and alcohol sensing at room temperature}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {OCT}, pages = {105421-105427}, abstract = {We report a one step facile hydrothermal synthesis of layered SnS2 nanoflakes. The as-synthesized nanosheets are characterized using X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy (TEM). The humidity sensing behavior of SnS2 nanoflake sensor device were investigated in the range of 11-97\% of relative humidity (RH) at room temperature. The response time of similar to 85 s and recovery time of similar to 6 s were observed for the SnS2 nanoflake based humidity sensor. A maximum sensitivity of 11.300\% is recorded. We also investigate the SnS2 nanoflake based alcohol sensing properties towards methanol, ethanol and iso-propyl alcohol. An exclusive selectivity towards methanol with a response of 1580 is shown as compared to other analytes. The response time of similar to 67 s and recovery time of just 5 s were observed for the SnS2 nanoflake based methanol sensor.}, doi = {10.1039/c6ra21252b}, author = {Bharatula, Lakshmi Deepika and Erande, Manisha B. and Mulla, Imtiaz S. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article {43632, title = {Spatially branched CdS-Bi2S3 heteroarchitecture: single step hydrothermal synthesis approach with enhanced field emission performance and highly responsive broadband photodetection}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {SEP}, pages = {95092-95100}, abstract = {This report explores the controlled hierarchical synthesis of CdS nanostructure branches on Bi2S3 nanorod cores via a facile single step hydrothermal route. Morphological and structural studies reveal the formation of CdS-Bi2S3 heteroarchitecture with excellent stoichiometry between the constituent elements. The growth of CdS over Bi2S3 strongly depends on optimization of the reaction conditions, especially low PVP concentration. Furthermore, the as-synthesized CdS-Bi2S3 heteroarchitecture demonstrates multifunctionality in field emission and photoresponse. Interestingly, the CdS-Bi2S3 heteroarchitecture shows enhanced field emission properties such as low turn-on field (similar to 1.8 V mu m(-1) for 10 mu A cm(2)), high emission current density and better current stability in comparison to Bi2S3 and other nanostructures. The as-synthesized CdS-Bi2S3 heteroarchitecture exhibits considerable response and recovery times, similar to 207 ms and 315 ms, respectively in comparison to bare Bi2S3 nanostructures (similar to 655 ms and 678 ms). The present results demonstrate CdS-Bi2S3 heteroarchitecture as a potential candidate for future optoelectronic device applications.}, doi = {10.1039/c6ra21085f}, author = {Bankar, Prashant K. and Pawar, Mahendra S. and Pawbake, Amit S. and Warule, Sambhaji S. and Late, Dattatray J. and More, Mahendra A.} } @article {43404, title = {Surface chemical bonds, surface-enhanced Raman scattering, and dielectric constant of SiO2 nanospheres in-situ decorated with Ag-nanoparticles by electron-irradiation}, journal = {Journal of Applied Physics}, volume = {120}, year = {2016}, month = {DEC}, pages = {Article Number: 234901}, abstract = {Nanostructures of dielectric materials decorated with metal nanoparticles are of great scientific interest; however, the involved synthesis methods are complicated and require multistep chemical processing, including functionalization of the dielectric surfaces. In the present work, without chemical processes, silver nanoparticles of average sizes in the range of 11 to 15 nm were in-situ synthesized and decorated on SiO2 nanospheres in a single step process by irradiating a solution (AgNO3-polyvinylpyrrolidone (PVP)-SiO2 nanospheres) with 6 MeV electrons at 1.5 x 10(15) e(-)/cm(2), 3.0 x 10(15) e(-)/cm(2), and 4.5 x 10(15) e(-)/cm(2) fluences. The electron irradiated solutions were characterized with different surface and other techniques. The results revealed that the SiO2 nanospheres were uniformly decorated with Ag nanoparticles, and the prominent chemical bonds involved were Ag-O, Si-O-Ag, and Si-Ag. Moreover, the sizes and the decoration density of Ag nanoparticles could be tailored by varying electron fluence. The Surface-enhanced Raman scattering (SERS) of 4-aminothiophenol (4-ATP) solutions was studied using substrates in the form of thin coatings of the solutions of Ag-decorated SiO2 nanospheres. The appearance of the characteristic SERS peaks of both 4-ATP and 4, 4{\textquoteright}-dimercaptoazobenzene (4, 4{\textquoteright}-DMAB) in Raman spectra confirmed the conversion of a fraction of 4-ATP into 4, 4{\textquoteright}-DMAB in the presence of Ag nanoparticles. Composites in the form of thin films were synthesized from the mixture solutions of PVP and Ag-decorated SiO2 nanospheres. The dielectric constant of each thin film was higher as compared to polymers, and could be tailored by varying electron fluence used for decorating Ag nanoparticles. Published by AIP Publishing.}, doi = {10.1063/1.4971866}, author = {Phatangare, A. B. and Dhole, S. D. and Dahiwale, S. S. and Mathe, V. L. and Bhoraskar, S. V. and Late, Dattatray J. and Bhoraskar, V. N.} } @article { ISI:000375270600080, title = {Surface modification of aligned CdO nanosheets and their enhanced field emission properties}, journal = {RSC Advances}, volume = {6}, number = {47}, year = {2016}, month = {APR}, pages = {41261-41267}, publisher = {ROYAL SOC CHEMISTRY}, address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND}, abstract = {

Porous aligned CdO nanosheets were grown on a cadmium (Cd) substrate by the simple and cost effective method of thermal annealing. Further, decoration of gold (Au) nanoparticles on the porous aligned CdO nanosheets (specimen A) was achieved by coating with a Au thin film and subsequent annealing treatment. The average diameters of decorated Au nanoparticles were found to be 15 nm, 21 nm and 28 nm for the Au thin films with 20 s, 40 s and 60 s (specimens B, C, and D) coating times. Detailed characterizations, such as structural and morphological analysis of porous CdO nanosheets and Au/CdO nanocomposite (Au decorated porous CdO nanosheets), have been carried out using a Field Emission Scanning Electron Microscope (FESEM), X-ray diffraction (XRD) and a Transmission Electron Microscope (TEM). Field emission studies of specimens A, B, C and D were carried out in the planar diode configuration. Turn-on fields of 1.9 V mu m(-1), 1.1 V mu m(-1), 2.4 V mu m(-1) and 2.8 V mu m(-1) have been found for the emission current density of 10 RA cm(-2) for specimens A, B, C and D, respectively. The observed low turn -on field of specimen B (Au diameter of 15 nm) was found to be superior to other semiconducting nanostructures reported in the literature. The field emission current stability over a period of 3 h at the preset current density of 1 RA cm(-2) is found to be excellent for all specimens. To the best of our knowledge, field emission studies along with surface modification of porous aligned CdO nanosheets have not been reported in the literature. The simple synthesis route, facile surface modification and the superior field emission results make the present emitter very suitable for micro/nano electronic devices.

}, issn = {2046-2069}, doi = {10.1039/c5ra28000a}, author = {Bagal, Vivekanand S. and Patil, Girish P. and Deore, Amol B. and Suryawanshi, Sachin R. and Late, Dattatray J. and More, Mahendra A. and Chavan, Padmakar G.} } @article { ISI:000369679500020, title = {Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique}, journal = {Materials Chemistry and Physics}, volume = {169}, year = {2016}, month = {FEB}, pages = {152-157}, publisher = {ELSEVIER SCIENCE SA}, address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND}, abstract = {

We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. (C) 2015 Elsevier B.V. All rights reserved.

}, keywords = {Electron microscopy (STEM, Microstructure, Nanostructures, Optical properties, Photoluminescence spectroscopy, Raman spectroscopy and scattering, TEM and SEM)}, issn = {0254-0584}, doi = {10.1016/j.matchemphys.2015.11.042}, author = {Borade, P. and Joshi, K. U. and Gokarna, A. and Lerondel, G. and Walke, P. and Late, Dattatray J. and Jejurikar, S. M.} } @article {43628, title = {Synthesis of Ni-doped ZnO nanostructures by low-temperature wet chemical method and their enhanced field emission properties}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {OCT}, pages = {104318-104324}, abstract = {In this study, we report an enhancement in the field emission (FE) properties of ZnO nanostructures obtained by doping with Ni at a base pressure of similar to 1 x 10(-8) mbar, which were grown by a simple wet chemical process. The ZnO nanostructures exhibited a single-crystalline wurtzite structure up to a Ni doping level of 10\%. FESEM showed a change in the morphology of the nanostructures from thick nanoneedles to nanoflakes via thin nanorods with an increase in the Ni doping level in ZnO. The turn-on field required to generate a field emission (FE) current density of 1 mu A cm(-2) was found to be 2.5, 2.3, 1.8 and 1.7 V mu mcm(-2) for ZnO (Ni0\%), ZnO (Ni5\%), ZnO (Ni7.5\%) and ZnO (Ni10\%), respectively. A maximum current density of similar to 872 mu A cm(-2) was achievable, which was generated at an applied field of 3.1 V mu m cm(-2) for a Ni doping level of 10\% in ZnO. Long-term operational current stability was recorded at a preset value of 5 mA for a duration of 3 h and was found to be very high. The experimental results indicate that Ni-doped ZnO-based field emitters can open up many opportunities for their potential use as an electron source in flat panel displays, transmission electron microscopy, and the generation of X-rays. Thus, the simple low-temperature (similar to 80 degrees C) wet chemical synthesis approach and the robust nature of the ZnO nanostructure field emitter can provide prospects for the future development of cost-effective electron sources.}, doi = {10.1039/c6ra21190a}, author = {Rana, Amit Kumar and Bankar, Prashant and Kumar, Yogendra and More, Mahendra A. and Late, Dattatray J. and Shirage, Parasharam M.} } @article {43580, title = {Temperature dependent raman spectroscopy and sensing behavior of few layer SnSe2nanosheets}, journal = {Chemistryselect}, volume = {1}, year = {2016}, month = {OCT}, pages = {5380-5387}, abstract = {Two- dimensional (2D) tin diselenide (SnSe2) nanosheets were synthesized using solvothermal route in one step and perform its humidity sensing, photo sensing and temperature dependant Raman spectroscopy studies. The sensor devices based on few layer SnSe2 nanosheets were prepared and which shows fast response as well as recovery time along with good long-term stability and high sensitivity. The photo sensing behavior shows the typical response time and recovery time to be similar to 310 ms and similar to 340 ms respectively for visible light illumination. The room temperature humidity sensing behaviors were studied in the range of 11-97\% relative humidity (RH). The ob-served sensitivity of similar to 81\% with response time of similar to 74 sec and recovery time of similar to 30 sec were calculated for the few layer SnSe2 nanosheets based humidity sensor. The humidity sensing results confirms the high stability of the device even after six months of time. The temperature dependent Raman spectroscopy investigation in the range of 80 K to 593 K were carried out which shows the negative temperature coefficient and softening of Raman modes as we increases the temperature. The softening modes of SnSe2 nanosheets due to temperature were explained on the basis of a double resonance process which is more active in an atomically thin sample.}, doi = {10.1002/slct.201601347}, author = {Pawbake, Amit S. and Date, Abhijit and Jadkar, Sandesh R. and Late, Dattatray J.} } @article {43635, title = {Temperature dependent Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets}, journal = {RSC Advances}, volume = {6}, year = {2016}, month = {AUG}, abstract = {The present investigation deals with temperature dependant Raman spectroscopy of electrochemically exfoliated few layer black phosphorus nanosheets. The temperature dependent study illustrates that softening of the A(g)(1), B-2g and A(g)(2) modes occurs as the temperature increases from 78 K to 573 K. The calculated temperature coefficients for the A(g)(1), B-2g and A(g)(2) modes were found to be -0.028 cm(-1) K-1, -0.028 cm(-1) K-1 and -0.018 cm(-1) K-1 respectively. The observed phenomenon can be utilized for characterizing other emerging two-dimensional inorganic layered materials with atomic thickness.}, doi = {10.1039/c6ra15996f}, author = {Pawbake, Amit S. and Erande, Manisha B. and Jadkar, Sandesh R. and Late, Dattatray J.} } @article {45631, title = {Temperature-dependent phonon shifts in atomically thin MoTe2 nanosheets}, journal = {Applied Materials Today}, volume = {5}, year = {2016}, month = {DEC}, pages = {98-102}, type = {Article}, abstract = {

The present investigations deal with temperature-dependent Raman spectroscopy of bi-layer and few-layer molybdenum telluride (MoTe2) nanosheets prepared by micromechanical exfoliation method on a 300 nm SiO2/Si substrate. The temperature-dependent Raman spectroscopy was carried out using 633 nm laser excitation over the wider temperature range of 123-523 K. The temperature-dependent study illustrates the softening of A(1g), E-2g(1), and B-2g modes as temperature increases from 123 K to 523 K. The calculated temperature coefficients for A(1g), E-2g(1) and B-2g modes of the bi-layer MoTe2, nanosheet sample were found to be -0.00911 cm(-1) K-1, -0.01297 cm(-1) K-1 and -0.0159 cm(-1) K-1,respectively. For few-layer MoTe2 nanosheet sample, the temperature coefficient values were found to be -0.0113 cm(-1) K-1 (A(1g)), -0.0129 cm(-1) K-1 (E-2g(1)) and -0.0149 cm(-1) K-1 (B-2g), respectively. The present work highlights the temperature-dependent lattice vibration consequence of 2D MoTe2 nanosheet, which can be fundamentally pertinent in other promising and emerging 2D ultrathin layer and heterostructured materials to be used in future optoelectronic and nanoelectronic devices. (C) 2016 Elsevier Ltd. All rights reserved.

}, keywords = {Layered material, MoTe2, Phonon vibration, Raman spectroscopy, thermal effect}, issn = {2352-9407}, doi = {10.1016/j.apmt.2016.09.013}, author = {Late, Dattatray J.} } @article {43430, title = {Wide band gap and conducting tungsten carbide(WC) thin films prepared by hot wire chemical vapor deposition(HW-CVD) method}, journal = {Materials Letters}, volume = {183}, year = {2016}, month = {NOV}, pages = {315-317}, abstract = {

In this letter, we report synthesis of tungsten carbide (WC) thin films having wide band gap(3.22-3.3 eV) with high electrical conductivity (80-1260 S/cm) by HW-CVD using heated using heated W filament and Tetra-fluoro-methane (CF4) gas. Formation of WC was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy. UV-Visible spectroscopy analysis revealed that the synthesized films have high transmission at wavelength 500 nm. Electrical properties measured using Hall measurement show that these films are semiconductor. The obtained results imply that the growth of WC thin films is mainly from the atomic species(W and C) evaporated from the hot filament. The HW-CVD opens a novel route to synthesize wide band gap and conducting WC at a cost-efficient way for DSSCs and hydrogen evolution reaction (HER). (C) 2016 Elsevier B. V. All rights reserved.

}, doi = {10.1016/j.matlet.2016.07.132}, author = {Pawbake, Amit and Waykar, Ravindra and Jadhavar, Ashok and Kulkarni, Rupali and Waman, Vaishali and Date, Abhijit and Late, Dattatray J. and Pathan, Habib and Jadkar, Sandesh} } @article {43457, title = {Electrochemical synthesis of a ternary transition metal sulfide nanosheets on nickel foam and energy storage application}, journal = {Journal of Alloys and Compounds}, volume = {695}, year = {2017}, month = {FEB}, pages = {154-161}, abstract = {We report growth of nickel cobalt sulfide (NCS) ultrathin nanosheets directly on Ni foam substrate by a facile and novel electrodeposition method. The as-prepared NCS sample is used as an electrode material for supercapacitor application due to their large electrochemically active surface area and interconnected nanosheet channels for the facilitation of ion transportation. The NCS nanosheets possess enhanced electrochemical performance in terms of fast and high reversible faradaic reactions characterized by prominent oxidation and reduction peaks. NCS nanosheets showed an ultrahigh specific capacitance of 1712 Fg(-1) at a current density of 1 Ag-1 with excellent cyclic stability. The excellent supercapacitor performance of NCS nanosheets can be attributed to its rich redox reactions as well as high transport rate for both electrolyte ions and electrons. (C) 2016 Elsevier B.V. All rights reserved.}, doi = {10.1016/j.jallcom.2016.10.163}, author = {Sahoo, Surjit and Naik, Kusha Kumar and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {45714, title = {Enhanced field emission characteristics of a 3D hierarchical Hfo2-Zno heteroarchitecture}, journal = {ChemistrySelect}, volume = {2}, year = {2017}, month = {MAR}, pages = {2305-2310}, type = {Article}, abstract = {

Three dimensional (3D) HfO2-ZnO heteroarchitecture comprised of thin coating of HfO2 on self assembled 3D ZnO urchins with pointed apex has been synthesized using hydrothermal route followed by Pulsed Laser Deposition (PLD). The as-synthesized HfO2-ZnO heteroarchitecture was characterized using XRD, SEM, EDS, and (HR) TEM, in order to reveal its structural, morphological, and chemical properties. The HfO2-ZnO heteroarchitecture emitter exhibits superior field emission (FE) behaviour in contrast to the pristine ZnO urchins, demonstrated by delivery of high emission current density of similar to 885 mA/cm2 at an applied field of similar to 3.35 V/mm, against similar to 383 mA/cm(2) at an applied field of similar to 4.32 V/mu m for the pristine ZnO urchins emitter. Interestingly, the HfO2-ZnO heteroarchitecture emitter exhibits excellent emission current stability characterized with fewer fluctuations, owing to very good ion-bombardment resistance offered by the HfO2 coating. Furthermore, the heteroarchitecture thus obtained facilitates tailoring of the morphology with high aspect ratio and modulation of electronic properties as well, thereby enhancing the FE behaviour. Despite HfO2 being wide band gap and high-k material, the HfO2-ZnO heteroarchitecture exhibits potential as promising candidate for fabrication of high current density cold cathode

}, keywords = {3D heteroarchitecture, Field Emission (FE), hydrothermal, PLD, TEM}, issn = {2365-6549}, doi = {10.1002/slct.201601723}, author = {Shisode, Raju T. and Suryawanshi, Sachin R. and Mistari, Chetan D. and Late, Dattatray J. and More, Mahendra A.} } @article {44126, title = {Enhanced field emission performance of MoO3 nanorods and MoO3-rGO nanocomposite}, journal = {ChemistrySelect}, volume = {2}, year = {2017}, month = {NOV}, pages = {10912-10917}, type = {Article}, abstract = {

The graphene and semiconducting hybrid based nanostructures have emerged as a new class of multifunctional materials with improved performance in comparison to the pristine semiconductors. Here, as-synthesized MoO3-reduced graphene oxide (rGO) nanocomposite emitter exhibits enhanced field emission (FE) behavior as compared to the pristine 1D MoO3 nanorods. The hydrothermally synthesized 1D MoO3 nanorods (1D) are grafted on the rGO sheet (2D) using a simple room temperature sonochemical method. The morphological and structural analysis confirms the attachment of MoO3 nanorods with rGO and the improved conductivity of the sample indicates a strong electronic interaction between them. Furthermore, the FE studies of as-synthesized MoO3 nanorods and MoO3-rGO nanocomposite emitters, carried out at a base pressure -1 x 10(-8) mbar, reveals the values of turn on field (required to draw an emission current density of 1 mu A/cm(2)) as 1.6 and 1.4 V/mu m, respectively. Interestingly, the maximum emission current density of 2810 mA/cm(2) is achieved at a lower applied field of 2.7 V/mu m from the MoO3-rGO nanocomposite emitter. The enhancement in FE performance of MoO3-rGO nanocomposite is attributed to the improved electrical conductivity, mechanical properties and higher concentration of protruding edges (emission sites). This observation can be extended to other graphene-based 1D inorganic hybrid semiconductor nanocomposites, which can provide a valuable opportunity to explore novel hybrid materials for vacuum nano-electronic devices.

}, doi = {10.1002/slct.201701914}, author = {Bankar, Prashant K. and Khandare, Lina N. and Late, Dattatray J. and More, Mahendra A.} } @article {43785, title = {Enhanced field emission performance of NiMoO4 nanosheets by tuning the phase}, journal = {Applied Surface Science}, volume = {418}, year = {2017}, month = {OCT}, pages = {270-274 }, type = {Article}, abstract = {In this paper we report, large scale synthesis of a and beta-NiMoO4 by a facile hydrothermal method and we observed that urea plays important role on the growth of beta-NiMoO4 nanosheets. We have also carried out field emission (FE) investigations of alpha and beta-NiMoO4 at a base pressure of similar to 1 x 10(-8) mbar. The obtained turn-on field at emission current density of 1 mu A/cm(2) for beta-NiMoO4 nanosheets and alpha-NiMoO4 is 1.3V/mu m and 2.2V/mu m respectively were observed. The maximum field emission current density of 1.006 mA/cm(2) at an applied electric field of 2.7V/mu m was achieved for beta-NiMoO4 nanosheets. Furthermore, we found that the beta-NiMoO4 nanosheets possess good field emission performance compared to alpha-NiMoO4. The results indicate that NiMoO4 can be used as a promising material in FE applications with possibility of tuning field emission performance by controlling the phase. (C) 2017 Elsevier B.V. All rights reserved.}, doi = {10.1016/j.apsusc.2017.02.177}, author = {Bankar, Prashant K. and Ratha, Satyajit and More, Mahendra A. and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {45698, title = {Extraction of the very high tunneling current and extremely stable emission current from GdB6/W-tip source synthesized using arc plasma}, journal = {ChemistrySelect}, volume = {2}, year = {2017}, month = {JAN}, pages = {562-566}, type = {Article}, abstract = {

Herein, we report the one step arc plasma synthesis of the GdB6 (Gadolinium hexaboride) nanoparticles and its field emission (FE) characteristics on tungsten point substrate (GdB6/ W). The SEM /TEM analysis revealed the GdB6 nanoparticles on W point substrate exhibit irregular shaped, grainy, dense, course morphology, i.e. uniformly covering the entire tip substrate surface. For GdB6/W point source, the values of the turn-on and threshold fields, defined as field required to draw an emission current density similar to 1 mA/cm(2) and similar to 100 mA/cm(2), respectively are found to be similar to 2.2 and similar to 2.7 V/mm, for anodecathode separation of similar to 1 mm. Interestingly, a very high emission current density of similar to 3.5 A/cm(2) has been drawn from the GdB6/W point emitter at relatively lower applied field of similar to 6.4 V/mm. The field enhancement factor found to be similar to 10,250. The GdB6/W point electron source exhibits a good emission current stability at similar to 10 mA for a period of 6 hr. The emission current stability is enumerated in terms of standard deviation and its magnitude has been measured to be only 1.72\% with respect to the average value. The superlative field emission characteristics signify the GdB6/W point electron source as potential candidates for vacuum micro/nanoelectronics device applications.

}, keywords = {Arc Plasma, field emission, Thin films}, issn = {2365-6549}, doi = {10.1002/slct.201601587}, author = {Suryawanshi, Sachin R. and Kanhe, Nilesh and Mathe, Vikas L. and Phase, Deodatta M. and Late, Dattatray J. and More, Mahendra A.} } @article {43943, title = {High-Performance Sensing Behavior Using Electronic Ink of 2D SnSe2 Nanosheets.}, journal = {Chemistry Select}, volume = {2}, year = {2017}, month = {MAY}, chapter = {4068-4075}, abstract = {

Most of the recent research work on layered chalcogenides is understandably focused on single atomic layers. However, it is uncertain if the single layer units are most ideal structures for enhanced gas-solid interactions. To probe this concern, we have synthesized few layer thick SnSe2\ nanosheets ink using liquid exfoliation method. The morphology, thickness / layering and elemental analysis of the sheets were characterized by using SEM, TEM, AFM, Raman spectroscopy and by XPS. The two dimensional (2D) SnSe2\ nanosheets sensor device with different thicknesses was assessed for the humidity and gas sensing performances with exposure to humidity in different conditions. The results show that compared to the bulk / thicker counterpart, sensor device of few SnSe2\ layers exhibit excellent sensitivity, recovery and ability to be tune the sensing performance with thickness and can be used in lab on chip devices.

}, doi = {10.1002/slct.201700261}, author = {Pawar, Mahendra and Kadam, Sunil and Late, Dattatray J.} } @article {43783, title = {MoO3-rGO nanocomposites for electrochemical energy storage}, journal = {Applied Surface Science}, volume = {418}, year = {2017}, month = {OCT}, pages = {2-8}, type = {Article}, abstract = {We have synthesized the one dimensional (1D) MoO3 nanorods and MoO3-rGO nanocomposite by using sonochemical dispersion method at low temperature. The obtained products were characterized by using Raman spectroscopy, FT-IR, SEM, TEM and HR-TEM. We have demonstrated the electrochemical properties of MoO3 nanorods and MoO3-rGO nanocomposites. The specific capacitance for MoO3 nanorods and MoO3-rGO nanocomposite was calculated to be 3.3 F/g and 22.83 F/g at current density of 0.3 A/g respectively. The nanocomposite of MoO3-rGO shows the better electrochemical performance as compared to pristine MoO3 nanorods sample due to improvement in the conductivity. Our result suggests that the MoO3-rGO nanocomposites material has great potential for electrochemical energy storage and related applications. (C) 2016 Elsevier B.V. All rights reserved.}, keywords = {Energy storage, Nanocomposites, Nanorods, Storage (materials), Temperature}, doi = {10.1016/j.apsusc.2016.11.199}, author = {Khandare, Lina and Late, Dattatray J.} } @article {43544, title = {Nonlinear Fowler-Nordheim behavior of a single SnO2 nanowire}, journal = {Journal of Vacuum Science \& Technology B}, volume = {35}, year = {2017}, month = {MAR}, pages = {Article Number: 02C105}, abstract = {The present work deals with the field emission study on multiple SnO2 nanowires synthesized by a simple thermal evaporation method. The randomly oriented multiple nanowires grown by the vapor-liquid-solid mechanism exhibit low turn on field (0.8V/mu m defined for the current density of 1 mu A/cm(2)) and linear Fowler-Nordheim nature (FN). However, for the understanding of the nature of the FN plot, field emission behavior of a single SnO2 nanowire is investigated. The FN plot is observed to be nonlinear in nature. A simple model explaining the field emission mechanism from the semiconducting single SnO2 nanowire is proposed. (C) 2017 American Vacuum Society.}, doi = {10.1116/1.4973949}, author = {Joshi, Padmashree D. and Joag, Dilip S. and Late, Dattatray J. and Mulla, Imtiaz S.} } @article {43832, title = {PbS nanostar-like structures as field emitters}, journal = {Chemistryselect}, volume = {2}, year = {2017}, month = {JUL}, pages = {5175-5179}, type = {Article}, abstract = {

The crystalline PbS nanostars were synthesized by thermal decomposition of thioacetamide (TAA) in aqueous solutions of lead acetate and acetic acid at 80 8 degrees C. The structure and morphology of the PbS nanostars have been characterized using X-Ray Diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The optical properties of the PbS nanostars have been studied using UV-Visible absorption Spectroscopy (UVVis). The field emission investigations have been carried out on the as synthesized PbS nanostars at the base pressure of similar to 13 10(-8) mbar. The turn on field required to draw an emission current density of 1 mu A/cm(2) is found to be 1.8 V/mm. The emission current-time plots show good emission current stability of the PbS nanostar emitter over a period of 4 hrs. The results in terms of low turn-on field and long term emission current stability of the PbS nanostars emitter reveals that it can be used in field emission based vacuum microelectronics / nanoelectronic devices.

}, doi = {10.1002/slct.201700350}, author = {Pawar, Mahendra S. and Bankar, Prashant K. and More, Mahendra A. and Late, Dattatray J.} } @article {44033, title = {Synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties}, journal = {Journal of Materials Science Materials in Electronics}, volume = {1}, year = {2017}, month = {JUL}, type = {Article}, abstract = {In present work, we report synthesis of orthorhombic-molybdenum trioxide (α-MoO 3) thin films using home-build hot wire-CVD (HW-CVD) method simply by heating the Mo filament in a controlled O 2 atmosphere. The formation of α-MoO 3 was confirmed by low angle-XRD and Raman spectroscopy. Low angle-XRD analysis revealed that α-MoO 3 crystallites have orientations along (110), (101) and (111) directions while Raman spectroscopy analysis shows two prominent vibrational modes ~819 and ~994 cm -1 associated with Mo 2{\textendash}O and Mo=O respectively. SEM and TEM analysis show the formation of nano-sheets like morphology of α-MoO 3 thin films. The SAED pattern shows highly crystalline nature of α-MoO 3. The humidity-sensing properties were investigated at room temperature by fabricating the two probe device. The humidity sensing results showed n-type behavior of α-MoO 3. The maximum humidity sensitivity of ~6957\% along with response time of ~66 s and recovery time of ~5 s were observed for α-MoO 3 thin film humidity sensor device. Our results have opened up a new avenue to grow α-MoO 3 for humidity sensor applications.}, doi = {10.1007/s10854-017-7473-6}, author = {Jadkar, Vijaya and Pawbake, Amit S. and Waykar,Ravindra G. and Jadhavar, Ashok Arjun and Mayabadi, Azam and Date, Abhijit and Late, Dattatray J. and Pathan, Habib M. and Gosavi, Suresh W. and Jadkar, Sandesh R.} } @article {44355, title = {Bessel{\textquoteright}s polynomial fitting for electrospun polyacrylonitrile/polyaniline blend nanofibers based ammonia sensor}, journal = {Materials Letters}, volume = {221}, year = {2018}, month = {JUL}, pages = {70-73}, type = {Article}, abstract = {In the present paper, we report the fabrication of electrospun polyacrylonitrile/polyaniline (PAN/PANI) blend nanofibers by electrospinning and polymerization and Bessel{\textquoteright}s polynomial model applied for its ammonia sensing characteristics. As-fabricated PAN/PANI blend nanofibers were characterized by scanning electron microscopy and Fourier transform infrared spectroscopy for the confirmation of fibers with nanoscale and blends of PAN and PANI. The semiconducting behavior of the PAN/PANI blend nanofibers was found to respond quickly towards ammonia gas. Sensitivity of the blend was obtained at near room temperature for different concentrations of ammonia. Bessel{\textquoteright}s polynomial function was found to be well fitted with the experimental data for the response towards ammonia gas. (C) 2018 Elsevier B.V. All rights reserved.}, doi = {10.1016/j.matlet.2018.03.075}, author = {Anwane, Rajashree S. and Kondawar, Subhash B. and Late, Dattatray J.} } @article {44233, title = {High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures}, journal = {AIP Advances}, volume = {8}, year = {2018}, month = {JAN}, pages = {015117}, type = {Article}, abstract = {

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 degrees C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm(-1) and D-band at 1340 cm(-1). The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm(2) at 1.2V/mu m), low turn-on field (0.6 V/mu m) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources. (c) 2018 Author(s).

}, issn = {2158-3226}, doi = {10.1063/1.5004769}, author = {Gupta, Bipin Kumar and Kedawat, Garima and Gangwar, Amit Kumar and Nagpal, Kanika and Kashyap, Pradeep Kumar and Srivastava, Shubhda and Singh, Satbir and Kumar, Pawan and Suryawanshi, Sachin R. and Seo, Deok Min and Tripathi, Prashant and More, Mahendra A. and Srivastava, O. N. and Hahm, Myung Gwan and Late, Dattatray J.} } @article {44641, title = {Improved nonenzymatic glucose sensing properties of Pd/MnO2 nanosheets: synthesis by facile microwave-assisted route and theoretical insight from quantum simulations}, journal = {Journal of Physical Chemistry B}, volume = {122}, year = {2018}, month = {AUG}, pages = {7636-7646}, abstract = {

The electrocatalytic properties of manganese oxide (MnO2) can be improved significantly by making hybrids/composites with noble metals (Au, Pd). Here, efforts have been made to synthesize the MnO2/Au and MnO2/Pd nanocomposites by a facile, rapid microwave irradiation method. The products characterized by X-ray diffraction and transmission electron microscopy exhibited their tetragonal phase and nanosheet morphology. The efficiency of the prepared composite materials as glucose sensor was tested by cyclic voltammetry and chronoamperometry measurements, and the results are discussed. The study revealed that successful modification of MnO2 by Pd led to excellent sensing performance by the reduction of size and the synergistic effect between MnO2 and PdO, which expedites the electron transfer. Besides, the wide detection range, good selectivity, and stability demonstrate its robustness in the design of electrochemical sensor platform. To get theoretical insight into the excellent sensing performance of MnO2/Pd, we have performed detailed density functional theory simulations to explore the charge transfer and bonding mechanism of glucose on MnO2 and Pd/Au-doped MnO2 surface. Pd is bonded strongly on MnO2 and makes MnO2/Pd more conducting due to the enhancement of density of states near Fermi level. The higher binding energy of glucose and enhanced charge transfer from glucose to Pd-doped MnO2 compared to bare MnO2 infer that Pd-doped MnO2 possess superior charge-transfer kinetics, resulting in higher glucose sensing performance, which supports our experimental observations.

}, issn = {1520-6106}, doi = {10.1021/acs.jpcb.8b01611}, author = {Ponnusamy, Rajeswari and Gangan, Abhijeet and Chakraborty, Brahmananda and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {44488, title = {Temperature and pressure dependent Raman spectroscopy of plasma treated multilayer graphene nanosheets}, journal = {Diamond and Related Materials}, volume = {84}, year = {2018}, month = {APR }, pages = {146-156}, type = {Journal Article}, abstract = {

Understanding of the fine structure at the atomic level and properties of graphene by creating defects is important from the point of view of thermal and stress management. Here we report Raman spectroscopic studies on pristine and plasma treated multilayer graphene to explore the remarkable structure and phonon properties with temperature and pressure. Temperature dependent studies illustrate monotonic softening of G and G' bands in the temperature range 78 to 573 K. This process can be of fundamental importance in other promising and emerging nano and heterostructured materials. The pressure dependent Raman spectroscopic investigations on G-band of these samples were carried out up to 25 GPa using a diamond anvil cell. Comparatively weak and more compressible nature of the G band (E2g in-plane mode) as a function of applied pressure is found in plasma treated graphene. After pressure release, the samples recover to their original ordered structure. The present study is important for further understanding of the fine structure, properties and effect of defects in graphene, which can affect the atomic bonds, thermal expansion, specific heat, and thermal conductivity as well.

}, keywords = {graphene, high pressure, Phonon, Plasma treated graphene, Raman spectroscopy}, issn = {9259635}, doi = {10.1016/j.diamond.2018.03.021}, author = {Pawbake, Amit S. and Mishra, K. K. and Machuno, Luis G. B. and Gelamo, Rogerio V. and Ravindranathan, T. R. and Rout, Chandra Sekhar and Late, Dattatray J.} } @article {46333, title = {Development of pristine and Au-decorated Bi2O3/Bi2WO6 nanocomposites for supercapacitor electrodes}, journal = {RSC Advances }, volume = {9}, year = {2019}, month = {OCT }, pages = {32573-32580}, type = {Article}, abstract = {

Pristine and Au-decorated Bi2O3/Bi2WO6 nanocomposites were synthesized via a facile hydrothermal method. Characterization techniques such as XRD, FESEM, HRTEM and XPS were used to explore the structural, morphological and electronic properties. Furthermore, electrochemical characterizations including cyclic voltammetry (CV), the galvanostatic charge-discharge (GCD) method, and electrochemical impedance spectroscopy (EIS) were performed to investigate the supercapacitance behaviour of the synthesized materials. Interestingly, the Au-decorated Bi2O3/Bi2WO6 nanocomposite showed a higher capacitance of 495.05 F g(-1) (1 M aqueous KOH electrolyte) with improved cycling stability (99.26\%) over 2000 cycles, measured at a current density of 1 A g(-1), when compared to the pristine Bi2O3/Bi2WO6 composite (capacitance of 148.81 F g(-1) and good cycling stability (95.99\%) over 2000 cycles at a current density of 1 A g(-1)). The results clearly reveal that the decoration of the Bi2O3/Bi2WO6 composite with Au nanoparticles enhances its supercapacitance behaviour, which can be attributed to an increase in electrical conductivity, good electrical contact between the electrode and electrolyte, and an increase in effective area. The Au-decorated Bi2O3/Bi2WO6 nanocomposite can be considered as an electrode material for supercapacitor application.

}, doi = {10.1039/c9ra06112f}, author = {Gote, Gorkshnath H. and Pathak, Mansi and More, Mahendra A. and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {46266, title = {Experimental and density functional theory investigations of catechol sensing properties of ZnO/RGO nanocomposites}, journal = {Applied Surface Science}, year = {2019}, month = {NOV}, type = {Article}, abstract = {

Catechol, an essential industrial feedstock is one of the major environmental pollutant which causes several health issues including skin irritation, eye damage and genetic defects. In this work, we have investigated the catechol sensing performance of ZnO/RGO composites for its quantitative detection. ZnO/RGO composite showed superior electron transfer kinetics, sensitivity (162.04 mu A mM cm(-2)) and lower detection limit (47 nM) than that of bare ZnO nanoparticles. Further, the change in the zeta potential towards the lower negative demonstrated the strong electrostatic interaction between ZnO-RGO and catechol where it is converted as 1, 2 Benzoquinone through redox reactions. By using state of the art of Density Functional Theory simulations, we have demonstrated the interaction of catechol molecule on various ZnO clusters and RGO supported ZnO clusters. The strong bonding between p orbital of O atom of catechol and d orbital of Zn atom and its charge transfer facilitate the oxidation of catechol molecule. In the presence of RGO, the binding energy of catechol and charge transfer increases which qualitatively infer that RGO/ZnO exhibits higher sensitivity compared to bare ZnO and in consistency with the experimental observations.

}, doi = {10.1016/j.apsusc.2019.143588}, author = {Ponnusamy, Rajeswari and Venkatesan, Rajiu and Gangan, Abhijeet and Samal, Rutuparna and Chakraborty, Brahmananda and Late, Dattatray J. and Rout, Chandra Sekhar} } @inbook {47466, title = {Facile process for ammonia sensing using electrospun polyvinylidene fluoride/polyaniline (PVDF/PANI) nanofibers chemiresister}, booktitle = {Advanced Materials}, volume = {224}, year = {2019}, pages = {3-15}, publisher = {Springer}, organization = {Springer}, abstract = {Electrospun polyvinylidene fluoride/polyaniline (PVDF/PANI) nanofibers chemiresister was fabricated by electrospinning and polymerization. As-fabricated PVDF/PANI nanofibers chemiresister was characterized by SEM, FTIR, TGA and DTG analyses. Cost effective with high accuracy microcontroller based sensor set up was designed for the measurement of change in resistance of chemiresister with respect to different concentrations of ammonia gas at various temperatures. The semiconducting behavior of the chemiresister was found to respond quickly towards ammonia gas. High sensitivity, fast response and recovery of PVDF/PANI nanofibers for ammonia gas at room temperature confirmed the chemiresister as potential candidate for ammonia sensing in environmental monitoring safety systems, chemical and automotive industries.}, doi = {10.1007/978-3-030-19894-7_1}, author = {Kondawar, Sanchit and Late, Dattatray J. and Anwane, Rajashree S. and Kondawar, Subhash B. and Koinkar, Pankaj and Parinov, Ivan A.} } @article {45501, title = {Facile production of mesoporous WO3-rGO hybrids for high-performance supercapacitor electrodes: an experimental and computational study}, journal = {ACS Sustainable Chemistry \& Engineering}, volume = {7}, year = {2019}, month = {JAN}, pages = {2350-2359}, type = {Article}, abstract = {

This work explored a promising supercapacitor electrode material (WO3-rGO hybrids) synthesized via a simplistic one-pot hydrothermal synthesis route. Various analytical studies (X-ray diffraction study, Raman spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Brunauer-Emmett-Teller analysis) were employed in furtherance to explore the structural, morphological, compositional, and surface areal properties of the prepared materials. The enhancement in electrochemical supercapacitive properties were evaluated from pure hexagonal phase WO3 to the various hybrids, depending on the concentration of GO introduced into it, using cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy. The WG-80 composite revealed the high rise in capacitance value of 801.6 F/g overcoming the individual capacitance of rGO (71.11 F/g) and WO3 (94.22 F/g) at a current density of 4 A/g with good cycling stability (75.7\%) over 5000 cycles. We have presented quantum capacitance from ab initio calculations and provided theoretical explanation from the orbital interactions.

}, keywords = {Density functional theory, Hydrothermal method, supercapacitor, WO3-rGO hybrids}, issn = {2168-0485}, doi = {10.1021/acssuschemeng.8b05132}, author = {Samal, Rutuparna and Chakraborty, Brahmananda and Saxena, Manav and Late, Dattatray J. and Rout, Chandra Sekhar} } @inbook {47481, title = {Fundamentals and sensing applications of 2D materials}, number = {A volume in Woodhead Publishing Series in Electronic and Optical Materials}, year = {2019}, publisher = {Elsevier}, organization = {Elsevier}, abstract = {Fundamentals and Sensing Applications of 2D Materials provides a comprehensive understanding of a wide range of 2D materials. Examples of fundamental topics include: defect and vacancy engineering, doping and advantages of 2D materials for sensing, 2D materials and composites for sensing, and 2D materials in biosystems. A wide range of applications are addressed, such as gas sensors based on 2D materials, electrochemical glucose sensors, biosensors (enzymatic and non-enzymatic), and printed, stretchable, wearable and flexible biosensors. Due to their sub-nanometer thickness, 2D materials have a high packing density, thus making them suitable for the fabrication of thin film based sensor devices.}, doi = {10.1016/C2017-0-02396-0}, author = {Hywel, Morgan and Rout, Chandra Sekhar and Late, Dattatray J.} } @inbook {47477, title = {Future prospects of 2D materials for sensing applications}, booktitle = {Fundamentals and Sensing Applications of 2D Materials}, number = {Woodhead Publishing Series in Electronic and Optical Materials}, year = {2019}, pages = {481-482}, publisher = {Elsevier}, organization = {Elsevier}, abstract = {Two-dimensional (2D) material attracted significant research interest from the discovery of graphene in 2004. These 2D materials allow a platform for artificial integration of heterostructures with unique platforms that show exotic physical attributes and phenomenon as well as properties and applications. Each layer in 2D materials consist of a covalent bond, a dangling bond-free lattice, and weak van der Waals (vdWs) interaction. This makes it feasible to fabricate lateral and vertical vdWs heterostructures without the constraints of lattice matching and processing compatibility. These vdWs heterostructures open a door for a broad range of applications in electronics, optoelectronics, flexible devices, sensors, and photovoltaics. In this chapter, we have critically assessed the recent developments in 2D materials, the fabrication of heterostructures, and their application for sensing purposes. We conclude with current challenges and ideas concerning future developments in this merging field.}, doi = {10.1016/B978-0-08-102577-2.00014-2}, author = {Morgan, Hywel and Rout, Chandra S. and Late, Dattatray J.} } @article {46040, title = {Graphene nanosheets assisted carbon hollow cylinder for high-performance field emission applications}, journal = {Materials Research Express}, volume = {6}, year = {2019}, month = {SEP}, pages = {095066}, type = {Article}, abstract = {

Electron sources are critical constituents for myriad many electronic applications including electron imaging, mass spectroscopy etc. Here, we report the realization of high-performance field emission from graphene assisted carbon hollow cylinders (Gr-CHCs) composed of multi-stacked radially aligned CNTs. These CHCs have built-in synthesis related Fe nanoparticles (NPs). This engineered nano-structure exhibits excellent field emission properties such as one of the ultra-low turn-on field (0.64V mu m(-1) at 10 mu A cm(-2)), low threshold field (0.74V mu m(-1) at 100 mu A cm(-2)), very high current density (15.49 mA cm(-2) at 1.32V mu m(-1)) which is nearly double the current density obtained in our previous study. High field enhancement factor (0.72. x. 10(4)) with highly stable emission current at 100 mu A was observed for more than 3 hrs at the base pressure of similar to 1. x. 10(-8) mbar. This study suggests an approach to enhance the current density using the proposed innovative nanostructure and forms the basic theme of this communication. Highly efficient and stable field emissions observed are attributed to the geometry of cylinder and the production of the high density of sharp protrusions within the graphene sheets which enhance the local electric field and dramatically enhance field emission. This innovative cylindrical geometry associated with graphene assisted on Fe bearing aligned CNTs along with the periphery of the bulk cylinder provides an easy injection of electrons from the conduction band of CHCs into the vacuum in the presence of an external electric field. The tunability of field emission properties of these CHCs can be easily achieved by tailoring their diameter (10 and 20 mm) and different concentrations of the precursor. This new approach of the graphene assisted cylindrical geometry-based field emitter source provides enormous prospects and demand for next-generation high resolutions display devices.

}, keywords = {Carbon nanotubes, field emission, graphene assisted carbon hollow cylinder, protrusions}, issn = {2053-1591}, doi = {10.1088/2053-1591/ab3030}, author = {Tripathi, Prashant and Gupta, Bipin Kumar and Bankar, Prashant K. and More, Mahendra A. and Late, Dattatray J. and Srivastava, Onkar Nath} } @article {46247, title = { Hydrothermal growth of MoSe2 nanoflowers for photo- and humidity sensor applications}, journal = {Sensors and Actuators A-Physical}, volume = {295}, year = {2019}, month = {AUG}, pages = {160-168}, type = {Article}, abstract = {

In the present investigation, we report the synthesis of molybdenum diselenide (MoSe2) nanoflowers by facile hydrothermal method for photo- and humidity sensor applications. The obtained samples were characterized thoroughly by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD spectrum shows crystalline nature of the sample. Raman spectroscopy shows two prominent vibration modes of E-2 (g)1 and A(1g) at (2) over tilde 41 and (2) over tilde 83 cm(-1) respectively. The crystalline nature of the sample confirmed with the TEM. The MoSe2 nanoflowers based sensor shows high photosensitivity and good response to humidity with excellent prolong stability. The maximum photoresponsitivity of (1) over tilde 94\% along with response of (4) over tilde0 ms and recovery time of (4) over tilde8 ms were observed for the sample. In case of humidity sensor, response time of (5) over tilde3 s and recovery time of (1) over tilde3 s with maximum sensitivity -74\% were observed under humidity environments. It suggests that, MoSe2 nanoflowers appear as a potential candidate for constructing high-performance nanoelectronics devices. (C) 2019 Elsevier B.V. All rights reserved.

}, doi = {10.1016/j.sna.2019.05.045}, author = {Shelke, Nitin T. and Late, Dattatray J.} } @inbook {47474, title = {Introduction}, booktitle = {Fundamentals and Sensing Applications of 2D Materials}, number = {Woodhead Publishing Series in Electronic and Optical Materials}, year = {2019}, pages = {1-3}, publisher = {Elsevier}, organization = {Elsevier}, abstract = {The book provides comprehensive and updated research contribution about advances in synthesis/growth of 2D materials for various sensor applications, their working principles, and mechanism behind the sensor as well physics and chemistry of materials.}, doi = {10.1016/B978-0-08-102577-2.00001-4}, author = {Morgan, Hywel and Rout, Chandra S. and Late, Dattatray J.} } @inbook {47476, title = {Photo sensor based on 2D materials}, booktitle = {Fundamentals and Sensing Applications of 2D Materials}, number = {Woodhead Publishing Series in Electronic and Optical Materials}, year = {2019}, pages = {465-479}, publisher = {Elsevier}, organization = {Elsevier}, abstract = {This chapter starts with a general introduction to the interaction of light with matter and use of this principle for sensing. Photo-sensing devices based on two-dimensional (2D) materials are compared to conventional designs and their respective differences discussed in detail. A range of 2D materials are introduced with a generic comparison based on their individual properties and importance to the generation of a photoresponse. Besides transition-metal dichalcogenides, the chapter also deals with black phosphorous photosensor devices. Different heterostructure architectures based on 2D layered structures are investigated and their role in next generation optoelectronics is discussed.}, doi = {10.1016/B978-0-08-102577-2.00013-0}, author = {Late, Dattatray J. and Bhat, Anha and Rout, Chandra Sekhar} } @article {46140, title = {Pressure-induced phase transitions in germanium telluride: raman signatures of anharmonicity and oxidation}, journal = {Physical Review Letters}, volume = {122}, year = {2019}, month = {APR }, pages = {145701}, type = {Article}, abstract = {

Pressure-induced phase transitions in GeTe, a prototype phase change material, have been studied to date with diffraction which is not sensitive to anharmonicity-induced dynamical effects. GeTe is also prone to surface oxidation which may compromise surface sensitive measurements. These factors could be responsible for the lack of clarity about the phases and transitions intervening in the phase diagram of GeTe. We have used high-pressure Raman scattering and ab initio pseudopotential density functional calculations to unambiguously establish the high-pressure phase diagram and identify three phases up to 57 GPa, a low-pressure rhombohedral phase, an intermediate pressure cubic phase, and a high-pressure orthorhombic phase. We detect substantial broadening and softening of Raman modes at low pressure and identify the transition regions and possible intermediate phases.

}, issn = {0031-9007}, doi = {10.1103/PhysRevLett.122.145701}, author = {Pawbake, Amit and Bellin, Christophe and Paulatto, Lorenzo and Beneut, Keevin and Biscaras, Johan and Narayana, Chandrabhas and Late, Dattatray J. and Shukla, Abhay} } @article {46057, title = {Realization of efficient field emitter based on reduced graphene oxide-Bi2S3 heterostructures}, journal = {Physica Status Solidi A-Applications and Materials Science}, year = {2019}, month = {JUL}, pages = {1900121}, type = {Article; Early Access}, abstract = {

Herein, Bi2S3 nanorods and reduced graphene oxide (rGO)-Bi2S3 heterostructures are synthesized using a simple hydrothermal method. The structural, morphological, chemical, and elemental analysis of as-synthesized materials is performed using X-ray diffraction (XRD), Raman spectroscopy, field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). Field emission (FE) studies are carried out on both pristine Bi2S3 nanorods and rGO-Bi2S3 heterostructure samples at a base pressure of approximate to 1 x 10(-8) mbar. The results show that the rGO-Bi2S3 heterostructure emitter has superior FE performance compared to pristine Bi2S3 emitters in terms of the turn-on field (2.6 V mu m(-1) at 10 mu A cm(-2)) and threshold field (4.0 V mu m(-1) at 100 mu A cm(-2)) along with a high emission current density of approximate to 1464 mu A cm(-2) at an applied electric field of 7.0 V mu m(-1). The rGO-Bi2S3 heterostructure emitter exhibits very good emission current stability, tested for more than 3 h duration, characterized by standard deviation values approximate to 2.84 and 4.06, corresponding to preset values 12 and 100 mu A. This study implies that one-step hydrothermal route can be efficiently used to synthesize organic-inorganic heterostructures that possess unique morphology. Furthermore, the synthesized rGO-Bi2S3 heterostructure emitter shows potential as an electron source for practical application in vacuum microelectronic devices.

}, keywords = {Bi2S3, field emission, Heterostructures, Nanorods, Reduced graphene oxide}, issn = {1862-6300}, doi = {10.1002/pssa.201900121}, author = {Gote, Gorkshnath H. and Bhopale, Somnath R. and More, Mahendra A. and Late, Dattatray J.} } @article {46044, title = {Superior humidity sensor and photodetector of mesoporous ZnO nanosheets at room temperature}, journal = {Sensors and Actuators B-Chemical}, volume = {293}, year = {2019}, month = {AUG}, pages = {83-92}, type = {Article}, abstract = {

Miniaturized sensor technology is vastly demanding multifunctional materials to fulfill many requirements simultaneously; instead of integrating various sensors into a single device. Efficient operation of these miniaturized sensors at room temperature is highly feasible and cost-effective. The humidity sensing and photodetection is precise merit of sensing in special usage like artificial skin. Sensitivity enhancement in both humidity and photodetection required the high surface area for adsorption as well as a high charge transfer mechanism. The two dimensional (2D) zinc oxide nanosheets (ZnO NS) is the ultimate structure for dimensionally confined transport properties owing to the specific surface atomic configuration that results in high sensitivity, low operating temperature, fast response and recovery, and improved selectivity. Furthermore, introducing porosity into 2D nanostructures has opened new opportunities to enhance the efficiency of sensors and detectors via increasing large surface area and tunable physical and chemical properties. Here we report preparation of mesoporous and highly crystalline 2D ZnO NS by a single step, template free, cost-effective chemical method. The structural and morphological characterizations of ZnO NS are carried out using XRD, FESEM, XPS, TEM respectively. The high-resolution TEM images emphasize sheet-like morphology with a thickness of around 18-22 nm. Further the mesoporous ZnO NS (MZNS) with the pore size between 5-10 nm are achieved by simple heat-treatment. XPS and PL study is confirming the oxygen deficiency in MZNS. The MZNS exhibits an excellent responsivity than PZNS with a fast response and rapid recovery time of 25 s and 5 s respectively along with good cyclic stability which is highly crucial for smart humidity sensor. Furthermore, it considerably enhances photo-sensor performance than pristine ZnO NS (PZNS) with (similar to)1 s response time as well as (similar to)1 s recovery time along with better stability. These promising results illustrate the great potential of MZNS for next-generation humidity sensors and photodetectors.

}, keywords = {humidity sensor, Mesoporous, nanosheets, Photo-detector}, issn = {0925-4005}, doi = {10.1016/j.snb.2019.04.086}, author = {Gupta, Shobhnath P. and Pawbake, Amit S. and Sathe, Bhaskar R. and Late, Dattatray J. and Walke, Pravin S.} } @article {46417, title = {Synthesis of a 3D free standing crystalline NiSex matrix for electrochemical energy storage applications}, journal = {Dalton Transactions}, volume = {48}, year = {2019}, month = {DEC }, pages = {16873-16881}, type = {Article}, abstract = {

The electrochemical performance for energy storage of three-dimensional (3D) self-supported heterogeneous NiSex cubic-orthorhombic nanocrystals grown by a facile one-step chemical vapour deposition (CVD) approach on Ni foam substrates has been explored. NiSex shows a high specific capacitance of 1333 F g(-1) with ultra-high energy (105 W h kg(-1)) and power (54 kW kg(-1)) densities. Furthermore, by integrating the as-grown NiSex as the anode and reduced graphene oxide as the cathode, a hybrid super-capacitor (HSC) prototype with a coin cell configuration has been fabricated. The device shows better capacitance (40 F g(-1)) with high energy (22 W h kg(-1)) and power (5.8 kW kg(-1)) densities and robust cycling durability (similar to 88\% capacitance retention after 10 000 repeated cycles). For practical reliability of the as-fabricated HSC, a red LED has been illuminated by connecting it with two charged coin cells. These outstanding performances of the HSC prove to be promising for applications in high energy storage systems.

}, issn = {1477-9226}, doi = {10.1039/c9dt03150b}, author = {Dinara, Syed Mukulika and Samantara, Aneeya K. and Das, Jiban K. and Behera, J. N. and Nayak, Saroj K. and Late, Dattatray J. and Rout, Chandra Sekhar} } @article {46244, title = { Temperature-dependent phonon dynamics of supported and suspended monolayer tungsten diselenide }, journal = {AIP Advances}, volume = {9}, year = {2019}, month = {AUG}, type = {Article}, abstract = {

Two-dimensional materials exhibit great potential for high-performance electronics applications and the knowledge of their thermal properties is extremely necessary, since they are closely related to efficient heat dissipation and electron-phonon interactions. In this study we report the temperature-dependence of the out-of-plane A(1g) Raman mode of suspended and supported CVD-grown single-crystalline tungsten diselenide (WSe2) monolayer. The A(1g) phonon wavenumber is linearly red-shifted for temperature ranging from 98 to 513 K, with first-order temperature coefficients beta of -0.0044 and -0.0064 cm(-1)/K for suspended and supported monolayer WSe2, respectively. The higher beta module value for supported sample is attributed to the increase of the phonon anharmonicity due to the phonon scattering with the surface roughness of the substrate. Our analysis of the temperature-dependent phonon dynamics reveal the influence of the substrate on thermal properties of monolayer WSe2 and provide fundamental information for developing of atomically-thin 2D materials devices. (C) 2019 Author(s).

}, doi = {10.1063/1.5118004}, author = {Carvalho, Thais C. V. and Araujo, Francisco D. V. and dos Santos, Clenilton Costa and Alencar, Luciana M. R. and Ribeiro-Soares, Jenaina and Late, Dattatray J. and Lobo, Anderson Oliveira and Souza Filho, Antonio Gomes and Alencar, Rafael S. and Viana, Bartolomeu C.} } @article {46198, title = {Temperature-dependent Raman spectroscopy and sensor applications of PtSe2 nanosheets synthesized by wet chemistry}, journal = {Beilstein Journal of Nanotechnology}, volume = {10}, year = {2019}, month = {FEB }, pages = {467-474}, type = {Article}, abstract = {

We report on a wet chemistry method used to grow PtSe2 nanosheets followed by thermal annealing. The SEM and TEM analysis confirms the formation of PtSe2 nanosheets. Furthermore, XRD, Raman, XPS and SAED patterns were used to analyze the crystal structure and to confirm the formation of the PtSe2 phase. The temperature-dependent Raman spectroscopy investigations were carried out on PtSe2 nanosheets deposited on Si substrates in the temperature range 100-506 K. The shifts in Raman active E-g and A(1g) modes as a function of temperature were monitored. The temperature coefficient for both modes was calculated and was found to match well with the reported 2D transition metal dichalcogenides. A PtSe2 nanosheet-based sensor device was tested for its applicability as a humidity sensor and photodetector. The humidity sensor based on PtSe2 nanosheets showed an excellent recovery time of approximate to 5 s, indicating the great potential of PtSe2 for future sensor devices.

}, keywords = {nanosheets, PtSe2, Raman spectroscopy, Sensor, thermal effect}, issn = {2190-4286}, doi = {10.3762/bjnano.10.46}, author = {Pawar, Mahendra S. and Late, Dattatray J.} } @article {46672, title = {Inhibition of quorum sensing, motility and biofilm formation ofpseudomonas aeruginosaby copper oxide nanostructures}, journal = {Journal of Cluster Science}, volume = {32}, year = {2020}, month = {OCT}, pages = {1531 - 1541}, type = {Article; Early Access}, abstract = {

Quorum sensing (QS) is the communication between bacterial cells governed by their population density and regulated by the genes controlling virulence factors and biofilm formation. Multiple mechanisms of biofilms are resistive to antimicrobial chemotherapy; therefore novel strategies are required to overcome its limitations. Here, we report the effect of various copper oxide nanostructures (CuO-NSs) on quorum sensing inhibition. The two-dimensional CuO-NSs such as interlaced nanodiscs, nanodiscs and leaf-shaped nanosheets are prepared via a simple chemical method. The Quorum sensing inhibition (QSI) activity of all the CuO-NS are examined using reporter strainChromobacterium violaceumCV026 andEscherichia colipSB1142. We found that the CuO-interlaced nanodisc structures exhibit better QSI activity than nanodiscs and leaf-shaped sheets. The interlaced nanodisc structures are inhibited various long-chainN-acyl homoserine lactones (AHLs) mediated QS individually and confirmed by other QS-associated phenomena forPseudomonas aeruginosa, including biofilm inhibition, inhibition of virulence factors such as pyocyanin, protease production and swarming motility. Thus QSI activity of CuO-NSs is solely dependent on specific shape offering large surface area and more active sites. The CuO-NS is effective quorum sensing inhibitors, which has potential clinical applications in the management ofP. aeruginosaassociated infections.

}, keywords = {aeruginosa, Biofilm, Nanostructures, P, quorum sensing, Virulence factors}, isbn = {1572-8862}, issn = {1040-7278}, doi = {10.1007/s10876-020-01916-2}, author = {Desai, Dnyanada G. and Swarali, H. and Navale, Govinda R. and Prabhune, A. and Late, Dattatray J. and Dharne, Mahesh S. and Walke, Pravin S.} } @proceedings {47327, title = {Spectroscopic probe of atomically thin domains of CVD-grown MoSe2}, volume = {2265}, year = {2020}, month = {NOV}, publisher = {AIP}, abstract = {
Since the discovery of graphene, two-dimensional Layered Transition Metal Dichalcogenides (TMDCs) such as MoS2, MoSe2, and WS2\ having a tunable bandgap, have emerged as one of the most stable classes of materials making them attractive for various applications. We have investigated the growth mechanism and shape evolution of various domains of CVD-grown MoSe2\ on insulating substrates by spectroscopic techniques. The different morphologies were analyzed using Raman and photoluminescence spectroscopies. The transformation from the precursor MoO3\ to MoSe2\ is found to depend on a number of growth parameters and experimental conditions.

}, doi = {10.1063/5.0017096}, author = {Singh, Vineeta and Late, Dattatray J. and Rath, Shyama} } @article {46944, title = {Tunable light emission from chemical vapor deposited two-dimensional MoSe2 by layer variation and S incorporation}, journal = {Journal of Vacuum Science \& Technology A}, volume = {38}, year = {2020}, month = {MAR}, pages = {023402}, type = {Article}, abstract = {

Mono- and few-layer thick MoSe2 and MoSxSe2-x domains were grown on insulating SiO2/Si substrates by chemical vapor deposition. Scanning electron microscopy and optical contrast images were used to determine the domain size and morphology. The structure, crystallinity, and the thickness (number of layers) of the as-synthesized domains were determined from Raman spectroscopy. The light emission was determined from photoluminescence (PL) spectroscopy. The PL emission started appearing only in domains having four layers or less, with the intensity increasing as the number of layers decreased. The PL peak position varied between 1.48eV (similar to 838nm) for four layers to 1.55eV (similar to 800nm) in the monolayer limit. Sulfur incorporation was done to enable a further tunability of the bandgap. The monolayer bandgap changed from 1.55eV for MoSe2 to 1.64eV (similar to 756nm) for MoS0.32Se0.68. The other effect of S incorporation was the formation of larger area domains in the alloy as compared to binary MoSe2 with an improvement in the structural properties, thus providing a pathway to improve the properties of two-dimensional semiconductors by mixing of two materials with similar atomic arrangements.

}, issn = {0734-2101}, doi = {10.1116/1.5124998}, author = {Singh, Vineeta and Late, Dattatray J. and Rath, Shyama} } @article {47717, title = {MoS2 and CdMoS4 nanostructure-based UV light photodetectors}, journal = {Nanoscale Advances}, volume = {3}, year = {2021}, month = {AUG}, pages = {4799-4803}, type = {Article}, abstract = {We have developed MoS2 nanosheets and CdMoS4 hierarchical nanostructures based on a UV light photodetector. The surface morphologies of the as-prepared samples were investigated via field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The performance parameters for the present photodetectors are investigated under the illumination of UV light having a wavelength of similar to 385 nm. Upon the illumination of UV light, the CdMoS4-based photodetector device showed a better response to UV light compared to the MoS2 device in terms of photoresponsivity, response time (similar to 72 s) and recovery time (similar to 94 s). Our results reveal that CdMoS4 hierarchical nanostructures are practical for enhancing the device performance.}, issn = {2516-0230}, doi = {10.1039/d1na00326g}, author = {Pawar, Mahendra S. and Kadam, Sunil R. and Kale, Bharat B. and Late, Dattatray J.} } @article {48190, title = {Enhanced field emission behaviour from ethylene glycol mediated synthesis of 2D hexagonal SnS2 disc with nanoparticle}, journal = {Materials Science and Engineering B-Advanced Functional Solid-State Materials}, volume = {284}, year = {2022}, month = {OCT}, pages = {115865}, type = {Article}, abstract = {

Herein, octahedron and stacked 2D hexagonal disc - like nanostructures of SnS2 were obtained by hydrothermal and ethylene glycol mediated hydrothermal methods, respectively. Attempt has been made to shade light on the plausible growth mechanism. Liquid phase exfoliation followed by centrifugation process leads to presence of tiny single crystalline SnS2 nanoparticles (similar to 5 nm) on the hexagonal discs over C substrate, characterized by preferred growth along {001} direction. The observed Raman shift and enhanced intensities of A(1g) and E-g modes infer charge interactions between the SnS2 disc and C substrate. Interestingly, the SnS2-C emitter exhibited superior field emission (FE) behaviour due to the unique morphology, excellent charge transfer, and reduced work function (similar to 4.1 eV). Here the extraction of large current density of similar to 1137 mu A/cm(2) at an applied field of 3.72 V/mu m, with good emission current stability. The present strategy is beneficial to design architectured morphology for multi-functionality.

}, keywords = {2D layered materials, Field Emission (FE), SnS2, SnS2 on C}, issn = {0921-5107}, doi = {10.1016/j.mseb.2022.115865}, author = {Mutadak, Pallavi R. and Chaudhari, Nilima S. and Gadhave, Dattatraya C. and Rajput, Parikshit K. and Kolekar, Sadhu K. and Late, Dattatray J. and More, Mahendra A. and Warule, Sambhaji S.} } @article {48297, title = {Size does matter: antibacterial activities and cytotoxic evaluation of polymorphic CuO nanostructures}, journal = {Journal of Materials Science}, volume = {58}, year = {2023}, month = {FEB}, pages = {2782-2800}, type = {Article}, abstract = {

Nanostructured materials play a significant role in antibacterial activities. However, understanding the geometrical influence at the nanoscale in terms of size- and shape-correlated physical properties on antibacterial activities is very essential. Herein, we report the antibacterial influence of various copper oxide nanostructures (CuO NS) such as nanoparticles (NPs) (\< 10 nm), nanospheres (NSs) (50-100 nm), and porous nanoflowers (NFs) (asymptotic to 350 nm). The XRD confirmed the crystalline nature of CuO NPs without impurities. The antibacterial activities of CuO NPs were investigated by the microplate dilution method and confocal laser scanning microscopic (CLSM) imaging. NPs having a diameter less than 10 nm exhibited significant damage to the bacterial cell membrane than NSs and NFs. Interestingly, NPs illustrated relatively low antibacterial activity against Gram-negative bacteria (Pseudomonas aeruginosa and Acinetobacter baumannii) than Gram-positive bacteria (Staphylococcus aureus and Staphylococcus epidermidis). Acinetobacter baumannii was found to be more susceptible to the NPs than other bacterial strains, attributed to its increased membrane permeability. The death phase was observed at a concentration of 15.6 mu g mL(-1) and 3.9 mu g mL(-1) for P. aeruginosa and A. baumannii, respectively, when treated with CuO NP after the 8 h of incubation. Similarly, for S. aureus and S. epidermidis, the death phase was observed at the concentration of 31.2 mu g mL(-1) and 250 mu g mL(-1), respectively. Furthermore, as the cell cytotoxicity measurements against human fibroblast L9239 cells revealed that CuO NPs were safe. The morphological and cell viability assay demonstrated 100\% cell survival, when treated with NPs and NSs (5, 10, and 25 mu g mL(-1)), signifies no cytotoxicity. Therefore, CuO nanoparticles can be used for clinical and therapeutic applications.

}, issn = {0022-2461}, doi = {10.1007/s10853-023-08157-4}, author = {Desai, Dnyanada G. and Navale, Govinda R. and Late, Dattatray J. and Dharne, Mahesh S. and Walke, Pravin S.} } @article {48342, title = {Titanium trisulfide nanosheets and nanoribbons for field emission- based nanodevices}, journal = {ACS Applied Nano Materials}, volume = {6}, year = {2023}, month = {JAN}, pages = {44-49}, type = {Article}, abstract = {

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of similar to 0.3 V/ mu m, required for drawing an emission current density of similar to 10 mu A/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of similar to 0.9 mA/ cm2 at a relatively low applied electric field of similar to 0.4 V/mu m. We have estimated the values of the field enhancement factor (beta), which are found to be similar to 5 x 104 for the TiS3 nanosheet emitter and similar to 4 x 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of beta. In fact, the nanosheet sample presents a higher density of ultrathin layers (similar to 12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are similar to 19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices.

}, keywords = {Current stability, field emission, nanoribbon, nanosheets, TiS3}, doi = {10.1021/acsanm.2c03460}, author = {Pawbake, Amit S. and Khare, Ruchita T. and Island, Joshua O. and Flores, Eduardo and Ares, Jose R. and Sanchez, Carlos and Ferrer, Isabel J. and Pawar, Mahendra and Frank, Otakar and More, Mahendra A. and van der Zant, Herre S. J. and Castellanos-Gomez, Andres and Late, Dattatray J.} }